• 제목/요약/키워드: Photolithography process

검색결과 251건 처리시간 0.031초

ZnO/나노결정다이아몬드 적층 박막 SAW 필터 (SAW Filter Made of ZnO/Nanocrystalline Diamond Thin Films)

  • 정두영;강찬형
    • 한국표면공학회지
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    • 제42권5호
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    • pp.216-219
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    • 2009
  • A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

전사기법을 이용한 실리콘 나노선 트랜지스터의 제작 (Fabrication of Silicon Nanowire Field-effect Transistors on Flexible Substrates using Direct Transfer Method)

  • 구자민;정은애;이명원;강정민;정동영;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.413-413
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    • 2009
  • Silicon nanowires (Si NWs)-based top-gate field-effect transistors (FETs) are constructed by using Si NWs transferred onto flexible plastic substrates. Si NWs are obtained from the silicon wafers using photolithography and anisotropic etching process, and transferred onto flexible plastic substrates. To evaluate the electrical performance of the silicon nanowires, we examined the output and transfer characteristics of a top-gate field-effect transistor with a channel composed of a silicon nanowire selected from the nanowires on the plastic substrate. From these FETs, a field-effect mobility and transconductance are evaluated to be $47\;cm^2/Vs$ and 272 nS, respectively.

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플라스틱 기판위의 기계적으로 유연성을 가진 PZT 박막 (Mechanically Flexible PZT thin films on Plastic Substrates)

  • 노종현;안종현;안정호;이내응;김상진;이환수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.13-13
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    • 2009
  • We have investigated the fabrication and properties of bendable PZT film formed on plastic substrates for the application in flexible memory. These devices used the PZT active layer formed on $SiO_2/Si$ wafer by sol-gel method with optimized device layouts and Pt electrodes. After etching Pt/PZT/Pt layers, patterned by photolithography process. these layers were transferred on PET plastic substrate using elastomeric stamp. The level of performance that can be achieved approaches that of traditional PZT. devices on rigid bulk wafers.

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이층 박막 구조에서 ITO 전극의 레이저 직접 패터닝 시레이저 식각 패턴 중첩 비율의 변화 (Overlapping Rates of Laser Spots on the Laser Direct Patterning of ITO Electrode in the Double-layer Structure of Thin Film)

  • 왕건훈;박정철;권상직;조의식
    • 한국전기전자재료학회논문지
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    • 제25권5호
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    • pp.377-380
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    • 2012
  • Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

전사방법을 이용한 폴리머 필름에 내재된 실리콘 나노구조물 어레이 제작 (Fabrication of a Silicon Nanostructure Array Embedded in a Polymer Film by using a Transfer Method)

  • 신호철;이동기;조영학
    • 한국생산제조학회지
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    • 제25권1호
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    • pp.62-67
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    • 2016
  • This paper presents a silicon nanostructure array embedded in a polymer film. The silicon nanostructure array was fabricated by using basic microelectromechanical systems (MEMS) processes such as photolithography, reactive ion etching, and anisotropic KOH wet etching. The fabricated silicon nanostructure array was transferred into polymer substrates such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), and polycarbonate (PC) through the hot-embossing process. In order to determine the transfer conditions under which the silicon nanostructures do not fracture, hot-embossing experiments were performed at various temperatures, pressures, and pressing times. Transfer was successfully achieved with a pressure of 1 MPa and a temperature higher than the transition temperature for the three types of polymer substrates. The transferred silicon nanostructure array was electrically evaluated through measurements with a semiconductor parameter analyzer (SPA).

비드를 이용한 면역분석용 마이크로필터 칩의 제작 (Microfilter Chip Fabrication for Bead-Based Immunoassay)

  • 이승우;안유민;채영규
    • 대한기계학회논문집A
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    • 제28권9호
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    • pp.1429-1434
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    • 2004
  • Immunoassay is one of the important analytical methods for clinical diagnoses and biochemical studies, but needs a long time, troublesome procedures and expensive reagents. In this study, therefore, we propose the micro filter chip with microbeads for immunoassay, which has pillar structures. The advantage of the proposed micro filter chip is to use simple fabrication process and cheap materials. The mold was made by the photolithography technique with Si wafer and negative photoresist SU-8. The replica was made of PDMS, bonded on the pyrex glass. The micro filter chip consists of inlet channel, filter chamber and outlet channel. HBV (Hepatitius B virus) monoclonal antibody (Ag1) labeled with biotin were immobilized onto streptavidin coated beads of 30∼50 $\mu$m size. Fluorescein isothiocyanate (FITC)-labeled HBV monoclonal antibody (Ag8) was used to detect HBsAg (Hebatitis B virus surface Antigen), and fluorescence intensity was monitored by epi-fluorescence microscope. In this study, the immune response of less than 30 min was obtained with with the use of 100 $m\ell$ of sample.

Holographic Polymer-Dispersed Liquid Crystals and Polymeric Photonic Crystals Formed by Holographic Photolithography

  • Kyu Thein;Meng Scott;Duran Hatice;Nanjundiah Kumar;Yandek Gregory R.
    • Macromolecular Research
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    • 제14권2호
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    • pp.155-165
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    • 2006
  • The present article describes the experimental and theoretical observations on the formation of holographic, polymer-dispersed, liquid crystals and electrically switchable, photonic crystals. A phase diagram of the starting mixture of nematic liquid crystal and photo-reactive triacrylate monomer was established by means of differential scanning calorimetry (DSC) and cloud point measurement. Photolithographic patterns were imprinted on the starting mixture of LC/triacrylate via multi-beam interference. A similar study was extended to a dendrimer/photocurative mixture as well as to a single component system (tetra-acrylate). Theoretical modeling and numerical simulation were carried out based on the combination of Flory-Huggins free energy of mixing and Maier-Saupe free energy of nematic ordering. The combined free energy densities were incorporated into the time-dependent Ginzburg-Landau (Model C) equations coupled with the photopolymerization rate equation to elucidate the spatio-temporal structure growth. The 2-D photonic structures thus simulated were consistent with the experimental observations. Furthermore, 3-D simulation was performed to guide the fabrication of assorted photonic crystals under various beam-geometries. Electro-optical performance such as diffraction efficiency was evaluated during the pattern photopolymerization process and also as a function of driving voltage.

PZT 강유전체 박막의 마이크로파 유전특성 (Microwave Dielectric Properties of Ferroelectric PZT Thin Films)

  • 곽민환;문승언;류한철;김영태;이상석;이수재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.719-722
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    • 2003
  • Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

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A High Performance Solenoid-Type MEMS Inductor

  • Seonho Seok;Chul Nam;Park, Wonseo;Kukjin Chun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권3호
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    • pp.182-188
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    • 2001
  • A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

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The Fabrication and Characteristics of Dye-sensitized Solar Cells (DSSCs) Using the Patterned TiO2 Films

  • 최은창;서영호;홍병유
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.445.1-445.1
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    • 2014
  • Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple structure and low manufacturing cost. The $TiO_2$ film with thickness of $8{\sim}10{\mu}m$, which consists of nanoparticles, acts as both a scaffold with a high surface-to-volume ratio for the dye loading and a pathway to remove the electrons. However, charge carriers have to move across many particle boundaries by a hopping mechanism. So, one dimensional nanostructures such as nanotubes, nanorods and nanowires should improve charge carrier transportation by providing a facile direct electron pathway and lowering the diffusion resistance. However, the efficiencies of DSSCs using one dimensional nanostructures are less than the $TiO_2$ nanoparticle-based DSSCs. In this work, the patterned $TiO_2$ film with thickness of $3{\mu}m$ was deposited using photolithography process to decrease of electron pathway and increase of surface area and transmittance of $TiO_2$ films. Properties of the patterned $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

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