Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.413-413
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- 2009
Fabrication of Silicon Nanowire Field-effect Transistors on Flexible Substrates using Direct Transfer Method
전사기법을 이용한 실리콘 나노선 트랜지스터의 제작
- Koo, Ja-Min (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
- Chung, Eun-Ae (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
- Lee, Myeong-Won (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
- Kang, Jeong-Min (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
- Jeong, Dong-Young (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
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Kim, Sang-Sig
(Department of Electrical Engineering and Institute for Nano Science, Korea University)
- 구자민 (고려대학교 전기전자전파공학부, 나노과학연구소) ;
- 정은애 (고려대학교 전기전자전파공학부, 나노과학연구소) ;
- 이명원 (고려대학교 전기전자전파공학부, 나노과학연구소) ;
- 강정민 (고려대학교 전기전자전파공학부, 나노과학연구소) ;
- 정동영 (고려대학교 전기전자전파공학부, 나노과학연구소) ;
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김상식
(고려대학교 전기전자전파공학부, 나노과학연구소)
- Published : 2009.06.18
Abstract
Silicon nanowires (Si NWs)-based top-gate field-effect transistors (FETs) are constructed by using Si NWs transferred onto flexible plastic substrates. Si NWs are obtained from the silicon wafers using photolithography and anisotropic etching process, and transferred onto flexible plastic substrates. To evaluate the electrical performance of the silicon nanowires, we examined the output and transfer characteristics of a top-gate field-effect transistor with a channel composed of a silicon nanowire selected from the nanowires on the plastic substrate. From these FETs, a field-effect mobility and transconductance are evaluated to be