• 통합자연과학논문집
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• 제2권4호
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• pp.252-264
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• 2009

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

• Rapid Communication in Photoscience
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• 제5권1호
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• pp.13-15
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• 2016

The reaction of styrene with phenol using photoacid catalyst has been investigated. Upon irradiation with 450 nm light, protonated merocyanine photoacid converts into spiropyran form with releasing proton. The reaction of styrene with phenol has been conducted under irradiation with 450 nm light using merocyanine photoacid catalyst at room temperature in comparison with the results using some selected catalysts including $H_2SO_4$ or $FeCl_3$ at the reaction temperature of $120^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제14권5호
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• pp.614-618
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• 1993

The photoacid generation efficiency of four N-hydroxyphthalimide sulfonate derivatives was studied by photo-crosslinking reaction of poly(glycidyl methacrylate) in solid film state. The relative photoacid generation efficiency was increased in the order of N-hydroxyphthalimide methanesulfonate > -toluenesulfonate > -nitrobenzenesulfonate > -dinitrobenzensulfonate, and the reaction was efficiently sensitized by benzophenone suggesting that this photoreactions is likely to proceed through its triplet excited state.

• 한국광학회지
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• 제21권6호
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• pp.241-246
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• 2010

본 논문에서는 근접장 패턴의 깊이와 종횡비(aspect ratio) 향상을 위해 전기장이 적용된 노광후굽기(electric field enhanced postexposure baking) 공정을 제안하였다. 전기장이 적용된 노광후굽기 공정 중 광산(photoacid) 분포를 기술하기 위하여 픽(Fick)의 확산 제 2법칙에 기반을 둔 지배방정식을 구성하였다. 수치해석(numerical calculation)을 통해 전기장의 세기가 0 에서 $8.0{\times}10^6\;V/m$ 로 증가함에 따라 광산의 수직적 이동거리가 늘어나는 것에 반해 수평적 이동거리는 거의 변화가 없음을 확인하였고, 이 때 근접장 패턴 형상을 얻었다. 이를 통해 근접장 패턴의 깊이, 종횡비, 패턴의 측벽 각(sidewall angle)이 향상됨을 알 수 있었다.

• 대한화학회지
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• 제46권5호
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• pp.437-471
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• 2002

포토레지스트의 감도 증진은 광산 발생제로부터 발생되는 산에 의해 자동촉매분해가 일어나는 산 증식제를 화학 증폭형 포트레지스트에 첨가함으로써 얻을 수 있다. 본 연구에서는 이소프로필리덴 디시클로헥산올의 p스티렌술폰산 유도체를 산 증식제로 합성되고 그 성능을 평가하였다. 이러한 산 증식제로 합성한 4-hydroxy-4`-p-styrensulfonyloxy isopropylidene dicyclohexane(1), 4,4`-di-styrenesulfonyloxy isopropylidene dicyclohexane(2) 그리고 4-p-styrene-sulfonyloxy-4`-tosyloxy isopropylidene dicyclohexane(3)는 레지스트 공정온도에 대하여 충분한 열적 안정성을 나타내었다. 또한 이러한 산 증식제를 사용한 경우에 광산 발생제만 사용한 poly(tert-butyl methacrylate)film에 비교하여 2배에서 12배 정도의 감도 증진이 일어나 광화상 제조에 실용적으로 응용 할 수 있음을 확인하였다.

• 공업화학
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• 제16권5호
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• pp.660-663
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• 2005

새로운 산증식제를 개발하기 위하여 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene-sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3)가 우수한 열적 성질을 갖는 방향족 산증식제로서 합성되었다. 이러한 새로운 산증식제들은 광산발생제로부터 생성된 소량의 산에 의해 자동촉매반응으로 p-톨루엔술포산을 생성하였다. 이러한 방향족 술포산 에스터들은 poly(tert-butyl methacrylate, PtBMA) 필름에서 우수한 열적 안정성을 보였고 감도증진제로서 작용하는 최초의 방향성 산증식제임이 증명되었다. 화학 증폭형 포토레지스트에 합성한 방향족 산중식제를 첨가한 경우에 감도가 3~6배 정도 증진되었다.

• Macromolecular Research
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• 제12권6호
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• pp.615-617
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• 2004

We have developed an efficient method for the generation of patterned fluorescence images using a protected precursor molecule. The t-Boc-protecting group of a coumarin derivative was readily removed from a polymer film upon irradiation with UV light in the presence of a photoacid generator to provide the original properties of the coumarin. Fine fluorescence patterns were obtained when using this photolithographic method.

• 한국인쇄학회지
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• 제20권1호
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• pp.91-101
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• 2002

An acid amplifier is defined as an acid-generating agent which is decomposed autocatalytically to produce new strongly acidic molecules in a non-liner manner, The addition of the acid amplifiers to conventional chemically amplified photoresists consisting of photoacid generators and acid-sensitive polymers result in the improvement of photosensitivity due to the amplified generation of catalytic acid molecules as a result of the decomposition of acid amplifiers. We synthesized and evaluated 1-hydroxy-4-tosyloxy cyclohexane(AA-1) and 1,4-ditosyloxy cyclohexane(Ah-2) as novel acid amplifiers. The acid amplifiers(AA-1, AA-2) showed reasonable thermal stability for resist processing temperature. As estimated by the sensitivity curve, tort-butyl methacrylate homopolymer(ptBMA) film doped with AA-1 or 2 exhibited much higher photosensitivity than ptBMA film without AA-1 or 2. And AA-1 showed higher effect than AA-2 on enhancing photosensitivity of ptBMA film.

• 한국인쇄학회지
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• 제21권1호
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• pp.21-34
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• 2003

Acid amplifiers derived from a certain class of sulfonates suffer from autocatalytic decomposition in the presence of a strong acid to give corresponding sulfonic acid, which catalyze the composition of the parent sulfonates, leading to the liberation of more of the same sulfonic acids in an exponential manner. In this research we synthesized and evaluated 4-hydroxy-4'-(2-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (1), 4,4'-di-(2-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (2), 4-hydroxy-4'-(3-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (3) and 4,4-di-(3-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (4) as novel acid amplifiers with electron withdrawing group. These acid amplifiers (1-4) showed reasonable thermal stability for resist processing temeprature and exhibited higher photosensitivity compared to poly(tert-butyl methacrylate) film without acid amplifiers. Application of acid amplifiers to photofunctional materials, including photoresists, are described as a consequence of the combination of the acid amplifiers with photoacid generator.

• 한국응용과학기술학회지
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• 제17권3호
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• pp.188-191
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• 2000

A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 $mJ/cm^{2}$.