• Elastomers and Composites
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• 제47권4호
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• pp.282-291
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• 2012

최근 들어 광, 온도, pH, 전기, 자성, 압력 등과 같은 외부 환경의 작은 변화에도 반응하여 모양/부피가 변하거나 기계적, 광학적, 전기적, 화학적 특성 등이 가역적으로 바뀌는 스마트 소재에 대한 관심이 높아지고 있다. 이러한 스마트 소재들 중 광조사에 의해 소재의 다양한 특성을 가역적으로 제어할 수 있는 광응답 스마트 소재가 많은 관심을 받고 있다. 본 논문에서는 광에너지를 받아 기계적 에너지로 바로 전환되어 인공근육, 모터 등과 같은 액츄에이터 기능을 할 수 있는 광구동형 스마트 고분자 소재들에 대해 소개하고자 한다. 특히, 광구동형 스마트 고분자 소재 중에서도 마이크로와 매크로 스케일 변형이 가능한 아조벤젠을 함유한 비결정성 고분자, 액정 고분자, 자기 조립형 초분자에 대한 다양한 연구들에 대해 설명하고자 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1208-1211
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• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

• International Journal of Control, Automation, and Systems
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• 제1권2호
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• pp.215-221
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• 2003

The education system in this paper is used to demonstrate and educate the effects of electromagnetic induction. Placing an aluminum ring over the core and switching on AC source causes the ring to jump in the air due to induced currents in the ring producing a magnetic field opposed to that produced in the core. To control the position of the ring by only the current, it is to require nonlinear control algorithm and control board that is composed of photo sensors, decode circuit, computer communication, and power electronics circuit. This paper provides the development for education system in detail and the effects of dynamic neural networks for nonlinear control with on line is studied.

• 한국응용과학기술학회지
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• 제12권1호
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• pp.109-114
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• 1995

The Synthesis of long chain fatty acid containing azobenzene and $(C_{n}-Azo)$ was optimized, starting from p-(p'-hydroxy phenyl azo)-benzoic acid and the product of reaction containing azobenzene chromophores was investigated by ultraviolet spectrophotometery in chloroform solvent at the various temperature. In addition, Reversibility and stability of azo compounds have been measured by means of Ultraviolet and the structure of these compound were ascertained by means of FT-IR and NMR. Recrystallization of reaction product in the solvent results the experimental yield obtained about 62.93% p-(p'-octadecyloxy phenyl azo)-benzoic acid. Long chain azobenzene derivatives in chloroform solution are induced photoisomerization by u. v. and visible light irradiation. The solution of long chain fatty acids$(C_{n}-Azo)$ containing azobenzene are possible of being applied to functional molecular devices such as photomemory and light switching.

• 조명전기설비학회논문지
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• 제16권1호
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• pp.35-43
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• 2002

새로운 형태의 고체 상태의 대전력, 고속전자장치인 광전도 전력스위치(PCPS)의 개발과 대전력 및 고전압 상태하에서 광전도 전력스위치의 고전계 동작특성을 규명하기 위해서 많은 연구가 행해지고 있다. 그러나 표면 섬락 현상이 확실하고 효과 있는 고속, 고압스위칭 소자의 실현을 방해하고 있다. 이러한 연면방전의 물리적 현상의 명백한 이해는 새로운 기술과 소자구성을 발전시키는데 매우 중요할 뿐 아니라, 고전계·고전압에서의 동작특성을 향상시키는데 있어서도 특별한 의미를 가진다. 뿐만 아니라 고전계, 고전력 소자들을 안전하게 동작할 수 있게 하기 위해서도 필요하다. 연면방전 및 표면 절연파괴현상은 반도체 벌크 파괴 전계보다 훨씬 낮은 전계에서 적용되어 파괴된 모든 소자들에서 발생하기 때문에 이러한 문제를 해결하는 매우 실용적인 방법이 소자의 표면을 절연물로 페시베이션하는 것이다. 페시베이션된 소자들은 고전계에서 언페시페이션된 소자에 비해 매우 좋은 동작특성을 나타내므로, 본 논문에서는 페시베이션된 소자와 언페시베이션된 소자간의 I-E특성과 파괴 메커니즘을 규명하고 더 나아가 다중 페시베이션에 대한 몇몇 특성 값을 제시한다.

• Journal of Information Display
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• 제9권4호
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• pp.21-29
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• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• 한국태양에너지학회 논문집
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• 제33권6호
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• pp.92-97
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• 2013

This paper proposes DC offset current compensation method of transformerless fuel cell/PV PCS. DC offset current is generated by the unbalanced internal resistance of the switching devices in full bridge topology. The other cause is the sensitivity of the current sensor, which is lower than DSP in resolution. If power converter system has these causes, the AC output current in the inverter will generate the DC offset. In case of transformerless grid-connected inverter system, DC offset current is fatal to grid-side, which results in saturating grid side transformer. Several simulation results show the difficulties of detecting DC offset current. Detecting DC offset current method consists of the differential amplifiers and PWM is compensated by the output of the Op amp circuit with integrator controller. PSIM simulation verifies that the proposed method is simpler and more effective than using low resolution current sensor alone.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• 전기학회논문지P
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• 제62권4호
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• pp.223-226
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• 2013

In this study, we investigated the electro-optical(EO) characteristic of fringe-field switching(FFS) mode cell by the two kinds of ultraviolet(UV) alignment method on the organic thin film(polyimide: PI). The suitable organic layersfor FFS cell and the aligning capabilities of nematic liquid crystal(NLC) using the in-situ photoalignment method were studied Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via in-situ photoalignment method for 2h and 3h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method(1h), and V-T curve of UV-aligned FFS-LCD with in-situphotoalignment method was much stable comparing with that of other UV-aligned FFS-LCD's. As a result, more stable EO performanceof UV-aligned FFS-LCD with in-situphotoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.