• Title/Summary/Keyword: Phonon transport

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저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성 (Low-Temperature Electron Transport Properties of La2/3+xTiO3-δ (x = 0, 0.13))

  • 정우환
    • 한국재료학회지
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    • 제24권11호
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    • pp.604-609
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    • 2014
  • The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

$YBa_2Cu_3O_7$ Coated Conductors의 Raman 분광학 연구 (Raman Spectroscopic Studies of $YBa_2Cu_3O_7$ Coated Conductors)

  • 최미경;;배정숙;조월렴;양인상;고락길;하홍수;박찬
    • Progress in Superconductivity
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    • 제6권2호
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    • pp.95-98
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    • 2005
  • We present results of Raman spectroscopic studies of superconducting $YBa_2Cu_3O_7$ (YBCO) coated conductors. Raman scattering is used to characterize optical phonon modes, oxygen content, c-axis misalignment, and second phases of the YBCO coated conductors at a micro scale. A two-dimensional mapping of Raman spectra with transport properties has been performed to elucidate the effect of local propertied on current path and superconducting phase. The information taken from the local measurement will be useful for optimizing the process condition.

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Ultraviolet Photoelectron spectroscopy Study of Colossal Magnetoresistive $La_{0.7-x}P_rxCa_{0.3}MnO_3$

  • Lee, Chang-Won;Hoon Koh;Noh, Han-Jin;Park, Jong-Hyurk;Kim, Hyung-Do;Moonsup Han;Oh, Se-Jung;Eom, dai-Jin;Noh, Tae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.172-172
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    • 1999
  • Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

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One-dimensional Bi-Te core/shell structure grown by a stress-induced method for the enhanced thermoelectric properties

  • Kang, Joo-Hoon;Ham, Jin-Hee;Lee, Woo-Young
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.47-47
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    • 2009
  • The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

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압축응력에 의한 박막 위 나노선 성장법을 이용한 Bi-Te 코어/쉘 열전 나노선 합성 (Bi-Te Core/Shell Nanowires Synthesis Based on On-Film Formation of Nanowires Method for Thermoelectric Applications)

  • 강주훈;함진희;노종욱;노진서;이우영
    • 대한금속재료학회지
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    • 제48권5호
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    • pp.445-448
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    • 2010
  • For an enhanced thermoelectric performance, one-dimensional heterostructure nanowires were created that consisted of aBi core and Te shell. The structure was fabricated by depositing Te in-situ onto a Bi nanowire grown by our unique OFF-ON (on-film formation of nanowires) method. After examining a cross-sectional TEM image, it was found that diffusive interface was formed between Bi and Te. Selected area electron diffraction revealed that the crystallinity of the Te shell was some what lower compared to the highly single-crystalline Bi core. The Bi-Te core/shell nanowires can be a smart structure that suppresses phonon transport by several scattering mechanisms, making the OFF-ON method the simplest way to realize that structure.

단결정 PbTe 단일 나노선의 열전도도 (Thermal Conductivity in Individual Single-Crystalline PbTe Nanowires)

  • 노종욱;장소영;강주훈;이승현;노진서;박정희;이우영
    • 대한금속재료학회지
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    • 제48권2호
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    • pp.175-179
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    • 2010
  • We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by chemical vapor transport method. Suspended MEMS was utilized to precisely measure the thermal conductivity of an individual nanowire. The thermal conductivity of a PbTe nanowire with diameter of 292 nm was measured to be $1.8W/m{\cdot}K$ at 300 K, which is about two thirds of that of bulk PbTe. This result indicates that the thermal conduction through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering. As the diameter of a PbTe nanowire decreases, the corresponding thermal conductivity linearly decreases.

Optimized Thermoelectric Properties in Zn-doped Zintl Phase Magnesium-Antimonide

  • Rahman, Md. Mahmudur;Ur, Soon-Chul
    • 한국재료학회지
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    • 제32권6호
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    • pp.287-292
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    • 2022
  • Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg3.8-xZnxSb2 (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

Investigation of the Thermal-to-Electrical Properties of Transition Metal-Sb Alloys Synthesized for Thermoelectric Applications

  • Jong Min Park;Seungki Jo;Sooho Jung;Jinhee Bae;Linh Ba Vu;Kwi-Il Park;Kyung Tae Kim
    • 한국분말재료학회지
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    • 제31권3호
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    • pp.236-242
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    • 2024
  • The development of thermoelectric (TE) materials to replace Bi2Te3 alloys is emerging as a hot issue with the potential for wider practical applications. In particular, layered Zintl-phase materials, which can appropriately control carrier and phonon transport behaviors, are being considered as promising candidates. However, limited data have been reported on the thermoelectric properties of metal-Sb materials that can be transformed into layered materials through the insertion of cations. In this study, we synthesized FeSb and MnSb, which are used as base materials for advanced thermoelectric materials. They were confirmed as single-phase materials by analyzing X-ray diffraction patterns. Based on electrical conductivity, the Seebeck coefficient, and thermal conductivity of both materials characterized as a function of temperature, the zT values of MnSb and FeSb were calculated to be 0.00119 and 0.00026, respectively. These properties provide a fundamental data for developing layered Zintl-phase materials with alkali/alkaline earth metal insertions.

다중벽탄소나노튜브 복합재료의 계면 및 열전도도에 표면처리 방법이 미치는 영향 (Effect of Multi-wall Carbon Nanotube Surface Treatment on the Interface and Thermal Conductivity of Carbon Nanotube-based Composites)

  • 유기문;이성구;김성룡
    • 접착 및 계면
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    • 제11권4호
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    • pp.174-180
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    • 2010
  • 다중벽탄소나노튜브를 표면처리하여 polymethylmethacrylate (PMMA) 기재에 첨가하여 제조한 고분자 복합재료에서 탄소나노튜브의 표면처리가 계면 및 열전도도에 미치는 효과를 고찰하였다. Coagulation 방법과 atomic transfer radical polymerization (ATRP) 방법을 사용하여 탄소나노튜브를 표면 처리 하여 사용하였으며, ATRP 방법을 적용하여 제조한 복합재료는 coagulation 방법을 사용하여 제조한 복합재료보다 높은 열전도도와 투과도를 가졌다. 순수 PMMA의 열전도도가 0.21 W/mK인데 비하여 ATRP 방법으로 처리한 1 wt%의 탄소나노튜브를 첨가하였을 경우 0.38 W/mK로 열전도도가 향상되었다. 탄소나노튜브와 PMMA기재의 계면을 주사전자현미경을 이용하여 관찰한 결과 탄소나노튜브의 표면처리에 의해 기재 내에 분산이 향상되고 고분자기재-탄소나노튜브 계면에서의 접촉이 용이해져 포논산란이 감소되어 광 투과성을 가지면서 열전도도가 향상된 것으로 보인다.

풀밴드 몬데카를로 방법을 이용한 GaAs 임팩트이온화의 온도 의존성에 관한 연구 (A Study on the Temperature dependent Impact ionization for GaAs using the Full Band Monte Carlo Method)

  • 고석웅;유창관;정학기
    • 한국정보통신학회논문지
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    • 제4권3호
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    • pp.697-703
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    • 2000
  • 임팩트이온화현상은 소자의 크기가 점점 작아지면서, 높은 에너지에 있는 hot carrier 전송 을 해석하기 위해 매우 중요하므로 소자의 시뮬레이션에 정확한 임팩트이온화모델이 필수적이다. 털 연구에서는 의사포텐셜방법을 사용하여 풀밴드모델을 구하고, 임팩트이온화율은 수정된 Keldysh 공식을 이용하여 유도하였다. 본 연구에서는 Gahs 임팩트이은화의 온도의존특성을 조사하기 위하여 Monte Carlo 시뮬레이터를 제작하여 임팩트이온화계수를 구하였다. 결과적으로, 임팩트이온화계수는 300K에서 실험값과 잘 일치하였다. 또한 에너지는 전계가 증가할수록 증가하고, 높은 온도에서는 포논 산란의 emission mode가 높기 때문에 에너지가 감소함을 알 수 있었다. 임팩트이온화의 대수 fitting 함수 식은 온도와 전계에 대해 2차식으로 표현하였다. 대수 fitting 함수의 오차는 대부분 5%이내에 머물렀다. 그러므로 대수식으로 표현된 임팩트 이온화계수는 온도에 의존함을 알았고, 임팩트이온화계수를 구하는데 시간을 절약할 수 있다.

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