• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Journal of Advanced Marine Engineering and Technology
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• 제33권1호
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• pp.131-137
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• 2009

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

• 한국가시화정보학회지
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• 제21권2호
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• pp.63-71
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• 2023

Energy storage and distribution technologies are emerging as important factors as research on renewable energy continues. Analyzing the thermal flow of phase change material inside a latent heat storage device and to predict the phase change time is an important part for improvement of thermal performance. However, most of the current research is based on the trial-and-error experimental investigation to measure the phase change time. Therefore, in this study, a can-type phase change material container was designed, and the numerical method for analyzing the thermal flow of phase change material was established and validated. The error rate of the phase change time between the numerical and experimental results was within 5%, which proves its reliability. As a result, the phase change finishing times were found to be 78 minutes with inlet fluid temperature of 80℃ during charging process, and 126 minutes with inlet fluid temperature of 9℃ during discharging process.

• Journal of Advanced Marine Engineering and Technology
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• 제28권8호
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• pp.1225-1238
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• 2004

The present study has been performed for obtaining the melting heat transfer enhancement characteristics of water mixture slurries of plural microcapsules having different diameters encapsulated with solid-liquid phase change material(PCM) flowing in a pipe heated under a constant wall heat flux condition. In the turbulent flow region, the friction factor of the present PCM slurry was to be lower than that of only water flow due to the drag reducing effect of the PCM slurry. The heat transfer coefficient of the PCM slurry flow in the pipe was increased by both effects of latent heat involved in phase change process and microconvection around plural microcapsules with different diameters. The experimental results revealed that the average heat transfer coefficient of the PCM slurry flow was about 2～2.8 times greater than that of a single phase of water.

• Journal of Advanced Marine Engineering and Technology
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• 제32권1호
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• pp.162-168
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• 2008

In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

• 설비공학논문집
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• 제18권6호
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• pp.518-525
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• 2006

The present experiments have been performed for obtaining the melting heat transfer characteristics of micro-encapsulated solid-liquid phase-change material and water mixture slurry flow in a circular tube heated with constant wall heat flux. The phase change material having a low melting point was selected for a domestic cooling system in the present study. The governing parameters were found to be latent heat material concentration, heat flux, and the slurry velocity. The experimental results revealed that the increase of tube wall temperature of latent microcapsule slurry was lower than that of water caused by the heat absorption of fusion.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2005년도 동계학술발표대회 논문집
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• pp.193-198
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• 2005

The present experiments have been performed for obtaining the melting heat transfer characteristics of micro-encapsulated solid-liquid phase change material and water mixed slurry flow in a circular tube heated with constant wall heat flux. The phase change material having a low melting point was selected for a domestic cooling system in the present study. The governing parameters were found to be latent heat material concentration, heat flux, and the slurry velocity. The experimental results revealed that the increase of tube wall temperature of latent microcapsule slurry was lower than that of water caused by the heat absorption of fusion.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.