Journal of Advanced Marine Engineering and Technology

The Korean Society of Marine Engineering (한국마린엔지니어링학회)
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Electro-Thermal Characteristics of Hole-type Phase Change Memory

Hole 구조 상변화 메모리의 전기 및 열 특성

  • 최홍규 (한국해양대학교 전기전자공학부) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 이성환 (위덕대학교 에너지전기공학부) ;
  • 이동영 (위덕대학교 에너지전기공학부)
  • Published : 2009.01.31
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Abstract

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

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References

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