• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.56.1-56.1
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• 2009

The intermediate operating temperature of solid oxide fuel cells (IT-SOFCs) have achieved considerable importance in the area of power fabrication. This is because to improve materials compatibility, their long-term stability and cost saving potential. However, to conserve rational cell performance at reduced-temperature regime, cathode performance should be obtained without negotiating the internal resistance and the electrode kinetics of the cell. Recently, double perovskite structure cathodes have been studied with great attention as a potential material for IT-SOFCs. In this study, double-perovskite structured cathodes of $GdBaCoCuO_{5+\delta}$, $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ compositions and $(1-x)GdBaCo_2O_{5+\delta}+xCe_{0.9}Gd_{0.1}O_{1.95}$ (x = 10, 20, 30 and 40 wt.%) composites were evaluated as the cathode for intermediate temperature solid oxide fuel cells(IT-SOFCs). Electrical conductivity of the cathodes were measured by DC 4-probe method, and the thermal expansion coefficient of each sample was measured up to $900^{\circ}C$ by a dilatometer study. Area specific resistances(ASR) of the $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ cathode and 70 wt.% $GdBaCo_2O5+\delta$ + 30wt.% Ce0.9Gd0.1O1.95 composite cathode on CGO electrolyte substrate were analyzed using AC 3-probe impedance study. The obtained results demonstrate that double perovskite-based compositions are promising cathode materials for IT-SOFCs.

• 융합정보논문지
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• 제11권6호
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• pp.146-153
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• 2021

최근 페로브스카이트 반도체 물질에 대한 연구가 이루어지고 있고, 이 물질에 대한 표면 처리를 이용한 특성 평가는 후속 연구들의 기반이 된다. 따라서, 본 논문에서는 상압분위기에서 플라즈마가 형성되는 상압플라즈마 장비로 산소 플라즈마를 생성하여 공기중에 약 6개월정도 노출시킨 페로브스카이트 박막을 표면 처리한 결과에 대해 연구하였다. 6개월간 노출시킨 이유는 페로브스카이트 박막은 유기물과 무기물로 이루어져 있기 때문에 공기 중에 노출되면, 산소나 수증기와의 반응을 통해 표면이 변화된다. 따라서, 이러한 변화를 원래 막으로의 복원이 가능한지 알아보기 위함이다. 산소플라즈마 분위기에서 1초부터 1200초까지 공정 시간을 변화시켜 가면서 표면 형상과 원소들 비율을 분석하였다. 이러한 결과는 페로브스카이트 막이 시간에 따라 변화가 일어나더라도 플라즈마 처리를 통해 이를 해결하는 방안을 제공한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.217-220
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• 1995

By substituting Cd$\^$2+/ into both A-site and B-site in PNN-PZ-PT ternary perovskite material, it is possible to determine the effects of the substitution site of Cd$\^$2+/ on sintering behavior. Sintering was performed in the temperature range from 1000$^{\circ}C$ to 1300$^{\circ}C$. The substitution site of Cd$\^$2+/ is identified by XPS spectra. Although Cd$\^$2+/ is substituted into both A-site and B-site in PNN-PZ-PT, Cd$\^$2+/ prefers A-site to B-site. The density is influenced by substitution site of Cd$\^$2+/. If Cd$\^$2+/ replaces Pv$\^$2+/, weight gain is observed during sinterig process. On the contrary, if Cd$\^$2+/ replaces Ni$\^$2+/, weight loss is promoted during sintering. From these weight changes, it is believed that Cd$\^$2+/ changes the bonding strength between B-site cation and oxygen of octahedron in perovskite structure. The changes of lattice parameters as a function of Cd$\^$2+/ content were consistent with those of the bonding strength. The densities of A-site-doped compositions were higher than those of B-site-doped composition.

• 한국자기학회지
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• 제10권3호
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• pp.139-142
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• 2000

이중 perovskite구조를 가진 전이금속 산화물 L $a_2$MnFe $O_{6}$ 기본 전자구조를 범밀도 함수법을 기초로 한 국소밀도 근사를 이용한 FLAPW방법으로 계산하였다. 여러 자성 구조의 전에너지 계산은 이 물질이 강자성 구조가 반강자성 구조보다 안정됨을 보여 주었다. 각 전이금속의 이온 상태는 자성 구조에 따라 달라짐을 보였다(강자성 $_Mn^{4+}$ , F $e^{2+}$ 준강자성 $_Mn^{3+}$ , F $e^{3+}$ ). 이것은 전이금속 사이의 초교환작용 이론으로 잘 설명되었고 계산 결과는 최근의 실험과 일치 하였다.

• 마이크로전자및패키징학회지
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• 제24권4호
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• pp.85-90
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• 2017

페로브스카이트 태양전지의 전자수송층(ETL)인 다공성 $TiO_2$에 $TiCl_4$를 흡착시켜 FTO 전극과 광활성층의 직접 접촉을 방지하고, 페로브스카이트 광활성층과 $TiO_2:TiCl_4$ 전자수송층 간의 전자 이동을 쉽게 함으로써 소자의 광전변환 효율을 높이고자 했다. 제작한 페로브스카이트 태양전지의 구조는 FTO/$TiO_2:TiCl_4$/Perovskite($CH_3NH_3PbI_3$)/spiro-OMeTAD/Ag이다. $TiCl_4$ 수용액에 다공성 $TiO_2$를 침지하는 시간을 변화시켜 제작한 소자의 광전기적 특성에 미치는 영향을 비교 평가하였다. $TiO_2:TiCl_4$ 전자수송층을 갖는 페로브스카이트 태양전지의 광전변환효율은 $TiCl_4$ 수용액에 $TiO_2$ 전자수송층을 30분 동안 침지하여 제작한 소자에서 가장 높은 10.46%를 얻었으며, 이는 $TiO_2$만의 전자수송층을 갖는 소자에 비해 27% 향상되었다. SEM, EDS, XPS 측정으로 $TiCl_4$ 흡착으로 인한 $TiO_2$ 층의 다공성 감소와 Cl 성분의 검출, 페로브스카이트 광활성층의 큐브형 모폴로지와 $PbI_2$ 피크의 이동을 관찰하였으며, $TiO_2:TiCl_4$ 층과 페로브스카이트 광활성층이 형성되었음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.680-684
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• 2007

In this study, we investigated the effects of structural and electrical properties of $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ thick films with variation $Dy_2O_3$ contents. $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ powders, prepared by the sol-gel method, were mixed organic vehicle. The BSCT thick films doped with 0.1, 0.3, 0.5, 0.7 mol% $Dy_2O_3$ were fabricated by the screen-printing techniques on the alumina substrates and the structural and dielectric properties were investigated with variation of $Dy_2O_3$ doping contents. All BSCT thick films were sintered at $1420^{\circ}C$, for 2hr. In the TG-DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $670 ^{\circ}C$. In the XRD analysis, all BSCT thick films showed the cubic perovskite structure. The average thickness of BSCT thick films was approximately $65{\mu}m$. The Curie temperature decreased with increasing $Dy_2O_3$ amount. The relative dielectric constant and dielectric loss of BSCT thick films doped with $Dy_2O_3$ 0.1 mol% were 6267 and 2.6 %, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.399-402
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• 2000

For improvement of B constant in $CaMnO_3$-$CaTiO_3$ perovskite type thermistors, effect of $Cr_2$$O_3$ addition ranged from 0.0wt% to 5.0wt% on electrical properties were investigated with contents and sintering temperatures in the view of crystal and microstructures. The solubility limit of Cr$_2$O$_3$was up to 0.5wt% judging from the result of lattice parameter. The grain size was decreased and the resistance at room temperature and B constant were increased with the addition of $Cr_2$$O_3$.On particular, B constant of$CaMnO_{3-x}$$Cr_2$$O_3$ system was increased greatly from 1574k to 2598k at 0.5wt% $Cr_2$$O_3$addition. Further addition of $Cr_2$$O_3$, however, resulted in the decrease of the resistance and B constant due to the $Cr_2$$O_3$ precipitation on the grain boundary. As the$CaTiO_3$contents increased in the $CaMnO_3$-$CaTiO_3$ system, the resistance at room temperature and B constant were highly changed.