• 공업화학
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• 제30권1호
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• pp.43-48
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• 2019

본 연구는 매체순환연소공정용 산소전달입자로서 $CaSnO_3$ 입자의 타당성을 조사하기 위해 수행하였다. $CaSnO_3$은 페롭스카이트 구조를 가지고, 반복되는 환원-산화 반응 후에도 구조적안정성을 보였다. 산소전달량은 환원 반응 시 결정구조 변화를 통해 계산된 이론 수치와 거의 동일한 15.4 wt%를 가졌다. 10번의 환원과 산화 반응 후에, 산소전달량과 산소전달속도는 작동 온도에서 일정하게 유지되었다. 결론적으로, $CaSnO_3$ 입자는 CLC의 산소 운반체로서 좋은 대체 물질이 될 수 있다고 판단하였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.929-935
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• 2010

$(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.01{\leq}x{\leq}0.10$) ceramics were fabricated with muffled sintering by a modified synthesis process. Their positive temperature coefficient of resistivity (PTCR) characteristics were investigated systematically. All specimen showed a perovskite structure with a tetragonal symmetry. Both the lattice parameter of a and c axes were slightly decreased with increasing $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) content. Grain growth was achieved when the incorporated BNT was increased to 6 mol% and the inhibition of grain growth is considered to be due to the appearance of Ba vacancy ($V^{"}_{Ba}$) in the $(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.08{\leq}x$). With 4 mol% BNT addition, room temperature resistivity decreased to $48 \Omega{\cdot}cm$ and a resistivity jump ($\rho_{max}/\rho_{min}$) was as high as $1.1{\times}10^4$, respectively. Curie temperature was also increased to $171^{\circ}C$ with increasing BNT content.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.45.1-45.1
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• 2011

Cobalt-free $La_xSr_{4-x}Fe_6O_{13}$ ($0{\leq}x{\leq}2$) oxide have been synthesized and investigated as a potential cathode material for solid oxide fuel cells (SOFCs). $Sr_4Fe_6O_{13}$ consists of alternating perovskite layers ($Sr_4Fe_2O_8$) containing iron cations in octahedral oxygen coordination and $Fe_4O_5$ layers where iron cations have 5-fold coordination of two types-square pyramids and trigonal bipyramids. Our preliminary electrochemical testes of pristine $Sr_4Fe_6O_{13}$ show a rather high area specific resistance ($0.47{\Omega}cm^2$ at $700^{\circ}C$) for ~20 ${\mu}m$ thick layers with CGO electrolyte. The electrochemical performances are improved by La addition up to x=1 ($La_1Sr_3Fe_6O_{13}$, $0.06{\Omega}cm^2$ at $700^{\circ}C$). In addition, thermal expansion coefficient (TEC) values of $La_1Sr_3Fe_6O_{13}$ specimen demonstrated $15.1{\times}10^{-6}\;^{\circ}C^{-1}$ in the range of 25-900$^{\circ}C$, which provides good thermal expansion compatibility with the CGO electrolyte. An electrolyte supported (300-${\mu}m$-thick) single-cell configuration of $La_1Sr_3Fe_6O_{13}$/CGO/Ni-CGO delivered a maximum power density of 584 $mWcm^{-2}$ at $700^{\circ}C$. In addition, an anode supported single cell by YSZ electrolyte (10-${\mu}m$-thick) with a porous CGO interlayer between the cathode and the electrolyte to avoid undesired interfacial reactions exhibited 1,517 $mWcm^{-2}$ at $800^{\circ}C$. The unique composition of $La_1Sr_3Fe_6O_{13}$ with low thermal expansion coefficient and higher electrochemical properties could be a good cathode candidate for intermediate temperature SOFCs with CGO and YSZ electrolyte.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.194-194
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• 2008

Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.49-54
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• 2003

본 연구에서는 Pt/SrBi$_2$Ta$_2$O$_{9}$(SBT)/Si (MFS)와 Pt/SBT/Pt (MFM) 각각의 구조에서 수소 열처리에 의한 SBT박막의 물리, 전기적 영향에 대해 연구하였다. SBT 박막의 미세구조 및 전기적 특성은 수소 열처리 후에 SBT 박막의 손상으로 열화된다. 특히, Pt 전극에 의한 SBT 박막의 열화 현상을 연구하기 위해 각각 Si 와 Pt 위에 SBT 를 증착하여 같은 조건으로 열처리를 하였다. XRD, XPS, P-V, C-V 측정을 통해 Pt 전극 없이 SBT자체로도 수소 열처리 후에 열화 됨을 확인 할 수 있었다. 또한, 수소 열화현상이라고 하는 촉매 반응으로 SBT 열화 현상이 Pt로 가속화되었다. 이러한 현상을 방지하기 위해서 새로운 Ir 전극을 제안하여 $Ir/IrO_2/SBT/IrO_2$ 구조에서의 수소 열처리 전후 및 회복 열처리를 통해 SBT 박막의 전기적 특성을 연구하였다. P-V측정을 통해 SBT박막을 이용한 MFM구조에서 Ir이 열화 방지용 전극 물질로의 활용 가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.14-17
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• 2014

In this study, lead-free Piezoelectric $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ ceramics were fabricated using mixed oxide method and the effects of various sintering temperature on the structural and electrical properties were investigated. For the $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ (NKN-SCT-$MnO_2$) ceramics sintered at temperatures of $1,025{\sim}1,100^{\circ}C$. The results indicated that all specimens were perovskite single phase formation without any second phase. It has been shown that relative density is increased to increasing sintering temperature. When the sintered temperature at $1,075^{\circ}C$, highest sintered density and maximum value of $4.45g/cm^3$. Average grain size is increased to increasing sintering temperature. The electromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sintering temperature $1,075^{\circ}C$ of NKN-SCT-$MnO_2$ specimens were 0.22, 511, 0.033, 103 and $380^{\circ}C$, respectively.

• 대한기계학회논문집B
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• 제37권6호
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• pp.583-590
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• 2013

가변 방사율 라디에이터는 우주환경에서 작동하는 장비의 온도가 낮을 때는 방사율이 낮아져 시스템의 외부로의 열 손실을 줄이고, 반대로 온도가 높은 때는 방사율이 높아져 장비의 열을 외부로 방출할 수 있어 효율적인 열제어가 가능하게 한다. 가변 방사율 소재로 보편적으로 이용하고 있는 것 중 하나인 감온변색 장치(thermochromics device)는 추가적인 장비 필요 없이 열제어가 가능하기 때문에 효율적이고 고장이 발생하지 않는 장점을 가지고 있다. 본 연구는 이와 같은 이유로 감온변색 장치의 소재 중 하나인 LSMO($La_{1-x}Sr_xMnO_3$)채택하여 졸-겔(sol-gel)방법을 이용하여 제작하고, 제작된 샘플의 가변방사 성능을 실험적으로 규명하였다. 또한, 진공환경과 극저온 환경에 반복 노출시켜 시편이 극심한 환경 변화 이후에도 방사율 값이 일정함을 확인하여 우주적합성을 판단하였다.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.35-40
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• 2009

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.