• Title/Summary/Keyword: Perovskite material

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Effect of Sealant Materials on Oxygen Permeation in Perovskite Oxide Membrane (밀봉 재료에 따른 페롭스카이트 막의 산소투과 특성)

  • Kim, Jong Pyo;Park, Jung Hoon;Yoon, Yeoil
    • Applied Chemistry for Engineering
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    • v.19 no.4
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    • pp.382-387
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    • 2008
  • $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ oxide was synthesized by polymerized complex method. Dense membrane of perovskite oxide was prepared using as-prepared powder by pressing and sintering at $1080^{\circ}C$. Leakage test was conducted on the membrane sealed by gold ring, Pyrex ring or Pyrex powder as a sealing material. The oxygen permeation flux of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membrane increased with increasing temperature and was $0.74mL/min{\cdot}cm^2$ at $900^{\circ}C$. In the case of the membrane applied by sealing material, oxygen permeation flux of the membrane using gold ring at $950^{\circ}C$ was higher than that using Pyrex materials because the undesired spreading of Pyrex glass materials in the membrane led to the reduction of effective permeation area. Microphotograph analysis results for the membrane after permeation test confirmedthe diffusion of Pyrex glass seal into the membrane.

The Dielectric Characteristics on $BaTiO_3$ Ceramic Material ($BaTiO_3$계 세라믹 재료의 유전특성)

  • Hong, Kyung-Jin;Jeong, Ji-Won;Lim, Jang-Seob;Noboru, Yoshimura;Kim, Tae-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.05a
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    • pp.19-21
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    • 1993
  • The perovskite type ferroelectrics has been studied to make a flim out of ceramic capacitor with large capacity and miniaturization. In this study. we make a capacitor in small size and high capacity, and measure SEM and dielectric permitivity of BCTM ceramic capacitor.

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Recent Progress of Light-Stimulated Synapse and Neuromorphic Devices (광 시냅스 및 뉴로모픽 소자 기술)

  • Song, Seungho;Kim, Jeehoon;Kim, Yong-Hoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.3
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    • pp.215-222
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    • 2022
  • Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

Advances in Intrinsically Stretchable Light-Emitting Diodes (본연적 신축성을 갖는 발광 다이오드 개발 동향)

  • Wonjin Koh;Moon Kee Choi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.6
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    • pp.537-546
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    • 2023
  • Intrinsically stretchable light-emitting diodes, composed of stretchable electrodes, charge transport layers, and luminescent materials, have garnered significant interest for enhancing human well-being and advancing the field of deformable electronics. Various luminescent materials, such as perovskites and organics, have been integrated with stretchable elastomers to function as the stretchable emissive layers in these intrinsically stretchable LEDs. Stretchable conductors including Ag nanowire based percolating structures and conducting polymers have been utilized as stretchable transparent electrode. Despite this progress, their performances in terms of efficiency and stability remain challenging compared to their structurally stretchable and rigid LED counterparts. This review offers a comprehensive overview of recent advancements in intrinsically stretchable LEDs, focusing on material innovations.

Sintering Behavior and Electrical Properties of Strontium Titanate-Based Ceramic Interconnect Materials for Solid Oxide Fuel Cells (고체산화물 연료전지용 Strontium Titanate 세라믹 접속자 소재의 소결 거동 및 전기적 특성)

  • Park, Beom-Kyeong;Lee, Jong-Won;Lee, Seung-Bok;Lim, Tak-Hyoung;Park, Seok-Joo;Song, Rak-Hyun;Shin, Dong-Ryul
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.80.1-80.1
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    • 2010
  • A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

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Preparation and Oxygen Permeability of $PrBa_{0.9}Sr_{0.1}Co_2O_{5+{\delta}}$ Ceramic Membrane ($PrBa_{0.9}Sr_{0.1}Co_2O_{5+{\delta}}$ 세라믹 분리막의 제조 및 산소투과 특성)

  • Pyo, Dae-Woong;Kim, Jong-Pyo;Son, Su-Hwan;Park, Jung-Hoon
    • Membrane Journal
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    • v.21 no.4
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    • pp.321-328
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    • 2011
  • $PrBa_{0.9}Sr_{0.1}Co_2O_{5+{\delta}}$ oxide was synthesized by soild state reaction method. Dense ceramic membrane was prepared using as-prepared powder by pressing and sintering at $1250^{\circ}C$. XRD result of membrane showed double perovskite structure. Leakage and oxygen permeation test were conducted on the membrane sealed by pyrex ring as a sealing material. Oxygen permeation was measured in the temperature range from 850 to $950^{\circ}C$. The oxygen flux of $PrBa_{0.9}Sr_{0.1}Co_2O_{5+{\delta}}$ membrane was increased with the temperature from 0.15 to $0.32mL/cm^2{\cdot}min$.

Effect of Conductive Additives in La0.8Sr0.2MnO3 Perovskite Electrodes for Oxygen Reduction and Evolution in Alkaline Solution (알칼리용액에서 La0.8Sr0.2MnO3 페롭스카이트 촉매의 산소환원 및 발생반응에서 도전재의 영향)

  • SHIM, JOONGPYO;LOPEZ, KAREEN J.;YANG, JIN-HYUN;SUN, HO-JUNG;PARK, GYUNGSE;EOM, SEUNGWOOK;LEE, HONG-KI
    • Journal of Hydrogen and New Energy
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    • v.27 no.3
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    • pp.276-282
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    • 2016
  • The effects of conductive additives in a $La_{0.8}Sr_{0.2}MnO_3$ perovskite bifunctional electrode for oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) were investigated in an alkaline solution. Highly porous carbon black (CB) and Ni powder were added to the bifunctional electrodes as conductive additives. The surface morphologies of electrodes containing CB and Ni were observed by scanning electron microscopy (SEM). The current densities for both ORR and OER were changed by the addition of CB. The conductive additive changed physical properties of bifunctional electrodes such as the sheet conductance, gas permeability and contact angle. It was observed that the air permeability of electrode was most effective to enhance the currents for ORR and OER.

Effect of Sintering Temperature on Structural and Dielectric Properties of (Ba0.54Sr0.36Ca0.10)TiO3 Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.2
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    • pp.49-52
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    • 2009
  • Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

Structural and electrical properties of perovskite Ba(Sm1/2Nb1/2)O3-BaTiO3 ceramic

  • Nath, K. Amar;Prasad, K.
    • Advances in materials Research
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    • v.1 no.2
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    • pp.115-128
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    • 2012
  • The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

Thick Films of LaNiO3 Perovskite Structure Impregnated with In and Bi Oxides as Acetonitrile Sensor

  • Salker, A.V.;Choi, Nak-Jin;Kwak, Jun-Hyuk;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.13 no.4
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    • pp.298-302
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    • 2004
  • Thick films of $LaNiO_{3}$ having perovskite structure impregnated with indium and bismuth oxides have been used as sensing material for acetonitrile ($CH_{3}CN$) gas. The sensor response for $CH_{3}CN$ is quite good with an excellent recovery for partial pressure from 3 ppm to 20 ppm between 200 and $250^{\circ}C$. $LaNiO_{3}$ alone has exhibited low response, but after impregnation of $In_{2}O_{3}$ and $Bi_{2}O_{3}$ have given increased sensitivity even with 3 ppm partial pressure of $CH_{3}CN$ at $200^{\circ}C$. It is assumed that $CH_{3}CN$ is undergoing oxidation reaction on surface of the film.