• E2M - 전기 전자와 첨단 소재
• /
• 제8권3호
• /
• pp.278-284
• /
• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2009년도 추계학술대회 논문집
• /
• pp.755-756
• /
• 2009

• ETRI Journal
• /
• 제28권1호
• /
• pp.103-106
• /
• 2006

We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.

• 한국자기학회지
• /
• 제4권4호
• /
• pp.307-312
• /
• 1994

(Fe, Co)/(Pd, Pt, Cu, Ag)로 이루어진 금속 다층박막에 대한 자기광학 Kerr 효과(${\theta}_{k}$) 스펙트럼을 박막내에서 빛의 다중간섭 이론을 적용하여 계산하였고, 그 결과를 보고된 실험값과 비교하였다. Co/Pd 다층막의 경우, ${\theta}_{k}$ 스펙트럼의 조성에 따른 파장 의존성에 대한 계산값이 서로 잘 일치하였으며, Fe/Cu 및 Fe/Ag 다층막에 있어서는 Cu와 Ag의 광흡수단 영역에서 다층막 고유의 새로운 peak가 나타나는 실험현상을 계산결과로 설명이 가능하였다. 그러나 Co/Pt 다층막의 경우에는 실험으로 측정된 300 nm파장 영역에서의 거대한 자기 광학 효과를 다중간섭이론으로는 설명할 수 없었으며, 이는 Co 또는 Pt 고유의 광학정수가 다층막을 이루면서 변화되어 나타나는 현상으로 생각된다.

• Journal of information and communication convergence engineering
• /
• 제4권1호
• /
• pp.18-22
• /
• 2006

A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.

• 한국자기학회지
• /
• 제20권3호
• /
• pp.89-93
• /
• 2010

수직자기이방성을 갖는 $[Pd/Co]_N$ 다층박막을 이용한 스핀밸브구조에서 Cu에 인접한 강자성층의 물질의 종류와 두께에 따른 자기적 특성을 연구하였다. 본 연구에서 강한 수직자기이방성에 기인한 자유층의 큰 보자력을 줄이기 위하여 Cu 비자성층에 인접 한 강자성층에 물질을 NiFe, $Co_8Fe_2$, $Co_9Fe_1$로 삽입하여 각 물질이 갖는 수직 이방성 크기를 조절하여 수직자기 이방성을 갖는 스핀밸브 구조의 자기적 특성을 실험하였다. $Co_9Fe_1$ 물질을 Cu에 인접한 두 강자성층에 0.078 nm의 얇은 두께로 삽입한 결과 0.58%의 자기저항비를 가짐과 동시에 5 Oe의 작은 보자력을 나타내었다. 또한 그 두께를 0.7 nm로 증가시켰을 때 최대 6.7%의 자기저항비를 얻었고 자유층의 보자력을 약 100 Oe로 감소시켰다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
• /
• pp.245-248
• /
• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. In this paper, we made the thick-film ZnO gas sensors with $PdCl_2$ as a catalyst and investigated the sensitivity to CO gas. In the thick-film Zno sensor, the highest sensitivity was shown in the sensor with 1wt.% of $PdCl_2$ which was sintered for 1 hour at $700^{\circ}C$ and operated at $300^{\circ}C$.

• 전자공학회논문지D
• /
• 제34D권4호
• /
• pp.33-39
• /
• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• Journal of Magnetics
• /
• 제11권2호
• /
• pp.70-73
• /
• 2006

The magnetization angle and thickness dependence of magnetic anisotropy in the exchange-biased [Pd/Co]${\times}$5/FeMn multilayers with an out-of-plane anisotropy were investigated to determine the origin of perpendicular exchange biasing. As the Co thickness increased to 1.5 nm in the [Pd(0.8 nm)/Co(t)]${\times}$5/FeMn(120 nm) films, the hysteresis loops were converted from square loops at a thin Co (<0.4 nm) to complicated round ones at a thick Co. The irregularly asymmetric step (IAS) at the left top of the loop appeared in the loop of the 0.6-nm Co film due to an inhomogeneity in the exchange anisotropy. As the Pd thickness increased to 1.6 nm, the step disappeared, and the perpendicular magnetic anisotropy was maximized in the Co thickness between 0.6 and 0.9 nm. The conversion of the magnetization loop along the magnetization angle coincided with the equation $H_{(eff)}=H_o\;cos{\theta}$. The IAS of the 0.8-nm Pd film disappeared after thermal annealing up to $200^{\circ}C$ under an external magnetic field.

• 센서학회지
• /
• 제15권2호
• /
• pp.90-96
• /
• 2006

We have fabricated the Pd-blck/NiCr gate MISFET-type $H_2$ sensor to detect the hydrogen in atmosphere. A differential pair-type structure was used to minimize the intrinsic voltage drift of the MISFET. The Pd-black film was deposited in the argon environment by thermal evaporation. In order to eliminate the blister formation in the surface of the hydrogen sensing gate metal, Pd-black/NiCr double metal layer was deposited on the gate insulator. The scanning electron microscopy and the auger electron spectroscopy was used to analyze their surface morphology and basic structure. The Pd-black/NiCr gate MISFET has been shown high sensitivity and stability more than Pd-planar/NiCr gate MISFET.