• Journal of the Korean institute of surface engineering
• /
• v.34 no.6
• /
• pp.545-552
• /
• 2001

Effect of ultrasonic agitation on Pd catalyst treatment was studied in metallization of ceramic boards by Cu electroless plating method.96% $Al_{2}$$O_{3}$ ceramic boards were used as substrate. In this study, the ultrasonic frequency of 28kHz was applied. In Pd catalyst, high density Pd nuclei of small size were formed during ultrasonic agitation. Density of Pd was more improved when using of ultrasonic then no stirring. In electroless plating, plating rate was in the range of 0.6~1.8$\mu\textrm{m}$/hr, which value increased with Rochelle Salts addition. Adhesion strength between ceramic boards and Cu layer was improved of 20% when using ultrasonic agitation at $30^{\circ}C$ ,5min.

• Journal of Sensor Science and Technology
• /
• v.8 no.4
• /
• pp.327-332
• /
• 1999

Catalytic combustion type gas sensors were fabricated by using noble metal(Pt and Pd) added ${\gamma}-Al_2O_3$ powder with specific surface area of $200\;m^2/g$. The fabricated sensor showed power consumption of 500 mW at the operating voltage of 1.75 V and high sensitivity of about 120 mV for butane, methane, or propane 100%LEL, respectively. The sensor properties also showed good linearity to hydrocarbon gas concentration variation, reproductivity and stability for relative humidity variation. And it showed high stability in butane ambient for 100 days.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.6
• /
• pp.477-480
• /
• 2010

In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.

• Journal of the Korean Ceramic Society
• /
• v.43 no.7 s.290
• /
• pp.433-438
• /
• 2006

In order to examine the working condition of melts in tin bath of float process it was investigated Sn diffusion behavior and solidification rate of melts for alkali-alkaline earth-silica PDP substrate glasses such as commercial CaO rich CS-77 glass, commercial $Al_2O_3$ rich PD-200 glass and self developed $SiO_2$ rich T-series (T-2, T-4, T-6) glasses. In the case of Sn depth and concentration created in glass surface by ion exchange between Sn and alkali, T-series showed lower value than CS-77, especially T-2 is more excellent than PD-200. The solidification rate of melts expressed by cooling time between $log{\eta}=4\;and\;7.6dPa{\cdot}s$ was low for T-series comparing with CS-77 and PD-200. Therefore, it was concluded that T-series is desirable considering forming condition in the tin bath of the float process.

• Clean Technology
• /
• v.16 no.1
• /
• pp.19-25
• /
• 2010

In this work, the conversion of crystalline cellulose into polyols in the presence of hydrogen was examined over noble metal (Pt, Ru, Ir, Rh, and Pd) catalysts supported on activated carbon. For comparison, Pt/${\gamma}-Al_2O_3$ and Pt/H-mordenite were also investigated. Several techniques: $N_2$ physisorption, X-ray diffraction(XRD), inductively-coupled plasma-atomic emission spectroscopy (ICP-AES), temperature-programmed reduction with $H_2$ ($H_2$-TPR) and CO chemisorption were employed to characterize the catalysts. The cellulose conversion was not strongly dependent on the types of the catalyst used. Pt/AC showed the highest yields to polyols among activated carbon-supported noble metal catalysts, viz. Pt/AC, Ru/AC, Ir/AC, Rh/AC and Pd/AC.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.6
• /
• pp.530-538
• /
• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.2
• /
• pp.315-322
• /
• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of Korean Society for Atmospheric Environment
• /
• v.15 no.5
• /
• pp.667-676
• /
• 1999

The roles of ceria on three-way catalyst is to improve the noble metal dispersion and thermal stability of support ${\gamma}$-$Al_2O_3$. And, ceria has a oxygen storage capacity(OSC) under fuel rich/lean conditions to improve the operating windows of NOx, THC and CO conversion. However, ceria has weak thermal stability under high temperature due to the crystallite growth. So that, the OSC of ceria is decreased, and then the conversions of NOx, THC and CO is decreased. One way of enhancing the thermal stability and NOx, THC and CO conversion Pd-only catalyst is to improve as well as its thermal stability and oxygen storage capacity of the ceria. Especially, the appropriate mixing ratios of bulk and stabilized ceria are very important for designing principles of Pd-only three-way catalysts. In this paper, we discussed the thermal properties of stabilizedand unstabilized (bulk) ceria, and the oxygen storage capacity (OSC) of catalysts, and found the correlation between activity and the OSC of Pd-only catalysts with various different mixing ratios of bulk and stabilized ceria. Finally, we propose the design principles to improve the thermal stability of washcoated Pd-only catalysts.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.115-115
• /
• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Journal of the Korean Chemical Society
• /
• v.26 no.1
• /
• pp.31-35
• /
• 1982

Novel palladium(II) complexes of the type Pd(IBA-NH)(IBA-NH') and Pd(IBA-NR)2, where IBA-NH and IBA-NR (R: methyl, ethyl, n-propyl, n-butyl, benzyl) represent isonitrosobenzoylacetone imine and its N-alkyl derivatives respectively, have been prepared. The ir, nmr, and electronic spectra of the palladium(Ⅱ) complexes have been studied. It has been determined that the isonitroso group of IBA-NH coordinates to palladium through the oxygen to form 6-membered chelate ring and that of IBA-NH' coordinates to palladium through the nitrogen to form 5-membered ring in square-planar Pd(IBA-NH)(IBA-NH') and it also has been determined that the isonitroso groups of two IBA-NR coordinates to palladium through the nitrogen to form 5-membered rings in square-planar Pd$(IBA-NR)_2$. The coordination manner of the ligands is similar to that of isonitrosoacetylacetone imines obtained by Bose, et $al.^5$.