• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.459-463
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• 2008

$P_2O_5-SnO_2$ system $0.5SnO_2-xP_2O_5-(0.5-x)B_2O_3$(x=0.1, 0.2, 0.3, 0.4, 0.5) glasses have been prepared for Pb-free low temperature glass frit. A investigation about the effect of $B_2O_3$ substitution on properties of $P_2O_5$ glasses, including glass structure properties, thermal properties, and mechanical properties was presented. Substance that is responsible for in moisture absorption existing circumstances supposes by phosphate, and excess moisture tolerance that state funeral's structure is improved breaking does not affect in state funeral bond that only most single bond remains, and can know that does not suffer big impact in boric oxide anomaly present state. This phenomenon estimates that connect with structure change. It is thought according to link this result the phosphoric acid happened structural change. $B_2O_3$ displacement quantity 0.3 mole put out $BO_4$ structures, but above 0.3 mole it changed with the case $BO_3$ structure which it displaces.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.434-439
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• 2008

Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.174-174
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• 2009

현재 전자부품용으로 사용되는 유리프리트의 경우 PbO계를 주로 사용하고 있다. 최근 환경규제에 따른 PbO 사용이 제한됨에 따라 이를 대체할 Pb-free 유리 조성에 대한 연구가 활발히 진행 중이다. Pb-free계로서는 $Bi_2O_3$계, $B_2O_3$계가 주로 연구되고 있으나 소성 온도가 $500^{\circ}C$이상으로 높고 또한 $Bi_2O_3$ 계는 중금속이기 때문에 문제가 있다. 본 연구에서는 $400^{\circ}C$ 미만 소성이 가능한 SnO-$P_2O_5$계를 기본 조성계로 선택하고 열적, 전기적, 화학적 특성을 개선하기 위해 $R_2O_3$(R=Al, B), RO(R=Mg, Zn, Ca, Ba) 를 첨가하였다. 개선된 조성으로 샘플을 만들고 이를 대상으로 실제 전자부품 생산 공정에 적용 실험을 진행 하였다. 실험에 사용된 전자 부품은 소형 칩 베리스터로 생산 공정에서 코팅용 유리프리트와 파우더를 절연체로서 전면에 코팅하게 된다. 유리프리트를 코팅함으로서 누설 전류를 차단하고 생산 공정시 베리스터 내부를 보호하게 된다. 실험에 사용된 샘플의 열적 특성은 TMA로, 전기적 절연 특성은 고 절연저항 측정기로 측정하였고 내 산성과 내 알칼리성도 측정하였다. 샘플을 이용하여 완성된 칩 베리스터의 성능은 고온, 내습 신뢰성 TEST(고온:$150^{\circ}C$ 12HR, 내습:$85^{\circ}C$-85%12HR)로 실험하여 합부판정 (Leakage current <10uA)을 내려 완성품과 불량품을 가려내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.814-817
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• 2003

The sintering behavior of $BaO-B_{2}O_{3}-ZnO$, which is Pb-free glass-ceramic system, was examined as functions of the composition and the amount and particle size of $Al_{2}O_{3}$ filler. Different kinds of modifiers were added and $Al_{2}O_{3}$ fillers with different particle sizes ($1.5{\mu}m$ and $4.5{\mu}m$) were added. The glass frit-filler composites were sintered in the temperature range $520{\sim}580^{\circ}C$. X-ray diffraction results revealed that some of the composites crystallized during sintering. Dielectric constant and thermal expansion coefficient the glass-ceramics were analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.795-798
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• 2002

Replacing Pb-free glass composition for the dielectric materials is expected in PDP industry. In this study, phosphate glasses, $P_2O_5$- ZnO- SnO (PZS), $P_2O_5$-ZnO-BaO (PZB) were selected for a new transparent dielectric. Thermal properties (Tg, CTE) were measured with differential thermal analyzer and thermal mechanical analyzer. The glass transition of the glasses was ranged at $365{\sim}405^{\circ}C$ for the PZS system and $5.9{\sim}9.5{\times}\;10^{-6}$ of thermal expansion were found. The PZB system showed $445{\sim}470^{\circ}C$ of glass transition. Thus, the glass compositions would be a potential candidate for a transparent dielectric layer in plasma display panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.220-222
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• 2004

Feasibility of BaO-ZnO-$B_2O_3$ (BZB) based glass system in the light of dielectric and thermal expansion properties are reported in the literature. Effects of addition of various types of ceramic fillers to the BZB-based glass on the thermochemical stability and mechanical properties were investigated in the present work. The studied filler-glass system demonstrated a capability to host various types of ceramic fillers to form thermochemically stable microcomposites at the processing temperature suitable for PDP systems. At the same time, mechanical strength of the filler-glass composites was much improved as compared to the glass itself These observations brighten the feasibility of the Pb-free BZB-based glass system as a host to employ various types of crystalline ceramic fillers so that it can be applied to barrier rib material in plasma display panels.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.471-479
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• 2021

The electrochemical reaction between lead borate glass frit doped with Sn metal filler and Ni-Cr wire of a J-type resistor during a term of Joule heating is investigated. The fusing behavior in which the Ni-Cr wire is melted is not observed for the control group but measured for the Sn-doped specimen under 30 V and 500 mA. The Sn-doped lead borate glass frit shows a fusing property compared with other metal-doped specimens. Meanwhile, the redox reaction significantly contributes to the fusing behavior due to the release of free electrons of the metal toward the glass. The electrons derived from the glass, which used Joule heat to reach the melting point of Ni-Cr wire, increase with increasing corrosion rate at interface of metal/glass. Finally, the confidence interval is 95 ± 1.95₉ %, and the adjusted regression coefficient, R in the optimal linear graph, is 0.93, reflecting 93% of the data and providing great potential for fusible resistor applications.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.368-373
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• 2012

Glasses were prepared with compositions of $(13-x)BaO-80B2_O_3-7Li_2O{\cdot}xSm_2O_3$, BBLSx(x=0.5, 0.4, 0.3) by melting the starting materials of boron oxide(99.9%), lithium oxide(99.9%), barium carbon oxide(99.9%), and samarium oxide(99.9%) and then quenching the melt at $1350^{\circ}C$. This led to good-quality BBLSx(x=0.4, 0.3) and poor-quality BBLSx(x=0.5) glasses. The physical and structural properties of the BBLSx glasses were studied by means x-ray diffraction, scanning electron microscopy(SEM), differential scanning calorimetry(DSC), and dielectric spectroscopy. From the x-ray diffraction and SEM results, the quality of the BBLSx glasses significantly depends on the $Sm_2O_3$ concentration. The x-ray diffraction pattern showed that the crystallites in the BBLSx glasses after heat treatment at $700^{\circ}C$ may be $LiBaB_9O_{15}$. From the DSC results, the glass transition temperatures($T_g$), crystallization temperatures($T_c$), and the maximum temperatures of the crystallized($T_p$) BBLSx glasses all changed with the $Sm_2O_3$ concentration. According to the dielectric spectroscopy results, the values of the real dielectric constant and Tan ${\delta}$ of the BBLSx glasses depended on the $Sm_2O_3$ concentration. The values of the real dielectric constant and Tan ${\delta}$ were also shown to depend on the measuring temperature, possibly due to the ion migration in the bulk of the BBLSx glasses.