• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.366-369
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• 2003

The vertical fountain plating system with the point contact has been used in semiconductor industry. But the plating shape in the opening of photoresist becomes gradated shape, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and $\alpha$-step. A photoresist was coated to a thickness of $60{\mu}m$ and vias were patterned by a contact aligner After via opening, solder layer was electroplated using the fountain plating system and the tilted electrode ring contact system. In $\alpha$-step measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were ${\pm}16%,\;{\pm}3.7%$ respectively. In this study, we could get high uniformity bumps by the tilted electrode ring contact system. So, tilted electrode ring contact system is expected to improve workability and yield in module process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.340-343
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• 2008

This work reports the simple fabrication of the single cell gap transflective liquid crystal display (LCD) using wire grid polarizer. The nano sized wire grid polarizer was patterned on common electrode itself, on the reflective part of FFS (Fringe field switching) mode whereas the common electrode was unpatterned at transmissive part. However, this structure didn't show single gamma curve, so we further improved the device by patterning the common electrode at transmissive part. As a result, V-T curve of proposed structure shows single gamma curve. Such a device structure is free from in-cell retarder, compensation film and reflector and furthermore it is very thin and easy to fabricate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• 한국재료학회지
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• 제14권1호
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.421-421
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• 2008

Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2518-2520
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• 1998

Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.69.2-69.2
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• 2010

Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.