• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.594-598
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• 2011

We have investigated the sensing properties of ethanol gas sensor with pure ZnO and Ga-doped ZnO nanowires on Au coated (0001) sapphire substrates grown by hot walled pulsed laser deposition. Randomly aligned ZnO nanowires arrays were grown on a Au-electrode patterned under ambient conditions. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The average of length and diameter of the ZnO nanowires were $8\;{\mu}m$ and 100 nm respectively, and confirmed by field emission scanning electron microscopy. Sensitivity chanege characterization of the gas sensor was found that measured sensitivities of the ethanol gas sensors were 83.3% and 68.3% at $300^{\circ}C$ respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.1004-1009
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• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.313-316
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, a conjugated oligomer such as ${\alpha}$-sexithiophene (${\alpha}$-6T) thin films was prepared by the Organic Molecular Beam Deposition (OMBD), and various electrode materials were also deposited by a simple vacuum evaporation, respectively. Those films were photolithographically patterned for the electrical measurements. Electrical charact-erization of the thin film transistor with various channel length were executed and the field effect mobility of these thin film transistors were also calculated by the formula using the experimental data.

• Journal of Biomedical Engineering Research
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• v.40 no.5
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• pp.151-157
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• 2019

An acoustofluidic device using conductive liquid-based electrodes was developed for malaria parasite separation from white blood cells. In this device, the electrode channels filled with a conductive liquid were used to generate standing surface acoustic waves (SSAWs) in a fluidic channel, which can overcome the limitation of conventional patterned metal electrodes. Separation performance of the device was evaluated using fluorescent polystyrene particles with two different sizes (2 and $10{\mu}m$ diameters), which were successfully separated. In addition, a mixture of malaria parasites and white blood cells were also efficiently separated with high purity of ~98% in the CL-SSAW device at the flow rate of $12{\mu}l/min$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.525-530
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• 2023

Stretchable piezoelectric energy harvester (S-PEHs) based on composite materials are considered one of the potential candidates for realizing wearable self-powered devices for smart clothing and electronic skin. However, low energy conversion performance and expensive stretchable electrodes are major bottlenecks hindering the development and application of S-PEHs. Here, we fabricated the S-PEH by adopting the piezoelectric composites with enhanced stress transfer properties and kirigami-patterned textile electrodes. The optimum contents of piezoelectric BaTiO₃ nanoparticles inside the carbon nanotube/ecoflex composite were selected as 30 wt% considering the trade-off between stretchability and energy harvesting performance of the device. The final S-PEH shows an output voltage and mechanical stability of ~5 V and ~3,000 cycles under repeated 150% of tensile strain, respectively. This work presents a cost-effective and scalable way to fabricate stretchable piezoelectric devices for self-powered wearable electronic systems.

• Progress in Superconductivity
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• v.2 no.2
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.