• 한국결정성장학회지
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• 제9권2호
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• pp.168-172
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• 1999

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

• 마이크로전자및패키징학회지
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• 제22권1호
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• 한국레이저가공학회지
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• 제7권3호
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2004년도 춘계학술발표회
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• pp.113-120
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• 2004

Grouting works in fractured rocks have been performed to reinforce the underground and/or to block ground water flow at the foundation site of dam, bridge and so on. For the efficient grouting design, a prior knowledge of the fracture pattern of underground area to be grouted in very important. For the practical use, aperture sizes of open fractures that will be filled up with grouting materials will be kind of valuable information. Thus, the main purpose of this study is to develop a new technique (so called "GenFT") enable to form a three dimensional image of fracture aperture density distribution from Televiewer data. For this, the study is to focus on dealing with (1) estimating aperture size of each fracture automatically from Televiewer time image, (2) mapping extension of fracture planes on a given section, (3) evaluating aperture density distribution on the section by using both aperture size and fracture face mapping result of each fracture, (4) developing an algorithm that can transfer the previous results to any arbitrary(vertical and/or horizontal) section around the borehole. Since 3D imaging means "a strategy used to form an image of arbitrarily subdivided 2D sections with aperture density distribution", it will help avoid ambiguities of fracture pattern interpretation and hence will be of practical use not only for the design and assessment of grouting works but also for various engineering works. Examples of fields experiments are illustrated. It would seem that this technique might lead to reflecting future trend in underground survey.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.95-95
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• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• Spatial Information Research
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• 제16권2호
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• pp.237-247
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• 2008

지도좌표를 가진 정보의 통계적 분석은 GIS 중요기능 중 하나로 인정되고 있다. 그 중 가장 기본적인 분석의 하나로 점사상에 대한 밀도분석이 이루어지고 있다. 밀도분석은 일반적으로 라스터 분석의 일부로 간주되고 있으며, 적합한 밀도분석을 위해서는 kernel 반경으로 알려진 검색반경의 결정이 중요한 것으로 알려져 있다. 본 연구에서는 기존 연구 결과에서 검색반경 설정에 유용한 것으로 알려진 L-지표를 이용하여, 비즈니스 GIS 분야에 축적된 점사상의 밀도 분석에 적합한 반경을 추정하고, 추정된 결과를 기반으로 점사상의 특성에 따른 L-지표의 거동을 고찰하였다. 연구결과 점사상이 대상지역의 일부 지역에서 크게 밀집되는 경우에는 L-지표가 대상지역의 크기와 무관하게 일정한 반경에서 극대값을 보이기 때문에 L-지표를 이용하여 검색반경을 설정하는 것이 유용함을 알 수 있었다. 반면, 점사상이 대상지역에 고루 분포하는 경우에는 L-지표의 극대값이 나타나는 반경이 대상지역의 크기에 따라 영향을 받기 때문에 L-지표를 이용하여 검색반경을 설정하는 것이 적합하지 않음을 알 수 있었다. 따라서 L-지표를 이용한 점사상 밀도의 검색반경 설정에는 점사상의 분포특성이 고려되어야 함을 알 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 춘계연구발표회 논문개요집
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• pp.20-21
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.29-29
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• 1999

• 한국재료학회지
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• 제27권10호
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• pp.518-523
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• 2017

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a $4{\times}4$ solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density($J_{sc}$), taken in each pattern as 37.61, 37.53, and $37.38mA/cm^2$ decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities($J_{sc}$) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

• 마이크로전자및패키징학회지
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• 제29권1호
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• pp.49-54
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• 2022

반도체 Si 웨이퍼 Cu 배선을 제작하는데 사용하는 submicron 크기의 다마신 패턴의 구리 도금공정을 동일한 조건의 유기첨가제 및 전류밀도 조건을 사용하여 PCB 금속배선에 사용되는 수십 micron 크기의 패턴 도금에 적용하였다. PCB 패턴의 종횡비가 작아 쉽게 채워질 것으로 기대했던 것과는 달리, 이 경우 패턴 내부에 위치별 도금 두께 불균일도가 심화되는 것이 관찰되었다. 이러한 원인을 정량적으로 분석하기 위해 유동 및 전기장을 고려한 전기화학적 해석을 진행하였으며, 이를 통해 패턴 바닥부 코너에서 측벽과 바닥부의 도금에 의한 용액내 Cu²⁺ 이온의 고갈이 상대적으로 패턴 상부보다 빠르게 일어나는 것이 확인되었다. 이는 Cu²⁺ 이온의 확산계수가 2.65×10^-10 m²/s 로 초당 16.3 ㎛정도의 평균 이동거리를 가짐으로, 이 값이 다마신 패턴에서는 충분히 커서 원활하게 패턴 내부까지 이온 공급이 이루어지나, 수십 micron 크기를 갖는 PCB 크기에서는 소진된 구리이온을 보충해 주기 위해 충분한 시간이 필요하기 때문인 것으로 확인되었다. 구리 이온을 충분히 공급해 주기 위해 전류밀도를 낮춰 Cu²⁺ 이온이 확산할 수 있는 충분한 시간을 할애해 줌으로써 두께 균일도가 향상되는 것을 알 수 있었다.