• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.659-662
• /
• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1642-1644
• /
• 1996

Passivation must prevent ionic charge movement on the surface of the junction, thereby minimizing the junction leakage and maximizing the breakdown voltage of the devices. Borosilicate glasses are widely used as surface passivants for such silicon power devices as thyristors, transistor, and diodes. Since these 91asses are electrically stable at high temperatures and in high electric fields, they can readily be applied as a thick film, and they are resistant to humidity and have low ionic mobility. A deposition technique of glass film on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. The purpose of this paper is to describe electrophoretic deposition method for glass passivation and characteristics of glass films which were compared using DTA, SEM, XRD, as a function of firing temperature.

• 대한전자공학회논문지
• /
• 제22권6호
• /
• pp.53-57
• /
• 1985

APCVD SiO2 또는 PSG 및 PECVD SiN막으로 구성된 이중 또는 삼중층의 반도체 표면보호막 구조의 특성을 층배합방법, 두께 등이 다른 여러 경우에 대하여 비교분석하였다. 문턱전압의 변동, 크랙 및 핀·홀의 발생, 내습성 등의 성질을 검토한 결과, 4,000Å 이상의 두께를 가진 PSG막과 6,000Å 두께의 SiN막으로 된 이중층이 표면보호막 구조로 가장 적합하다는 결론을 얻었다.

• 반도체디스플레이기술학회지
• /
• 제19권2호
• /
• pp.68-71
• /
• 2020

In this study, SiNx and Al₂O₃ thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al₂O₃ thin films through the PECVD process.

• Bulletin of the Korean Chemical Society
• /
• 제22권2호
• /
• pp.189-193
• /
• 2001

The irreversible capacities caused by the reduction of solvent on the surface of a negative electrode (KMFC:Kawasaki Mesophase Fine Carbon) were examined during the initial cycle in ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte solut ions at various concentrations of LiPF6. Chronopotentiograms, linear sweep voltammograms, and impedance spectra clearly showed differences in irreversible capacity and that those differences are related to the concentration of electrolyte during the initial charge. These differences were caused by the amount of solvent decomposition as a function of the concentration of LiPF6 electrolytic salt. The data are discussed with reference to the concentration of electrolytic salt and the properties of passivation film formed by solvent decomposition.

• 한국결정성장학회지
• /
• 제24권3호
• /
• pp.106-110
• /
• 2014

Atomic layer deposition(ALD)을 이용하여 $Al_2O_3$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. ALD로 증착된 $Al_2O_3$ 박막은 $400^{\circ}C$ 5분간 후속 열처리 공정 후에도 $Al_2O_3$ - 실리콘 계면 반응 없이 비정질 상태를 유지할 만큼 구조적으로 안정한 특성을 나타내었다. 후속 열처리 후 $Al_2O_3$ 박막의 패시베이션 특성이 향상되었으며, 이는 field effective 패시베이션과 화학적 패시베이션 효과가 동시에 상승에 기인하는 것으로 판단된다. $Al_2O_3$ 박막의 음고정 전하를 정량적으로 평가하기 위해서 후속 열처리 공정을 거친 $Al_2O_3$ 박막을 이용하여 metal-oxide-semiconductor(MOS) 소자를 제작하고 capacitance-voltage(C-V) 분석을 수행하였다. C-V 결과로부터 추출된 flatband voltage($V_{FB}$)와 equivalent oxide thickness(EOT)의 관계식을 통하여 $Al_2O_3$ 박막의 고정음전하는 $2.5{\times}10^{12}cm^{-2}$로 계산되었으며, 이는 본 연구에서 제시된 $Al_2O_3$ 박막 공정이 N-type 실리콘 태양전지의 패시베이션 공정에 응용 가능하다는 것을 의미한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.334.2-334.2
• /
• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• 전자공학회논문지A
• /
• 제33A권11호
• /
• pp.97-104
• /
• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.794-797
• /
• 2009

We manufactured a novel gas permeation thin film passivation by using inorganic Mg-Zn-F target which has better optical characteristics and high electronegativity. We fabricated targets in various composition ratio and formed about 200nm which is limited thickness of the flexible display. Applied to PLED device, the target which composed of $MgF_2$ and Zn at the ratio of 4:6, WVTR was reached the measurement limit of the equipment, $10^{-3}g/m^2{\cdot}day$ and the life time was increased 25 times better than PLED device which is non-passivation.

• 한국전기전자재료학회논문지
• /
• 제16권9호
• /
• pp.812-815
• /
• 2003

In this study, the MgO thin-film passivation layer was adopted to protect passive matrix organic light emitting diode(PMOLED) with the cathode separator from moisture and oxygen. Using the substrate rotate and tilt technique during the deposition, the organic and cathode layers were perfectly covered with MgO. And then, we analyzed the difference of the current-voltage and luminescence characteristics between passivated OLED of the MgO and non-passivated OLED. It was found that the number of dark spot generated from the degradated pixel was decreased owing to the Mgo thin-film passivation layer using the tilt ＆ rotate technique. And the half-life time passivated OLED was improved two times more. Thus, the MgO could be vaccum-deposited under the low temperature and had a merit that the organic layer was not much affected. We can consider that MgO thin film passivation method can be adopted to protect the OLED from moisture and oxygen and can offer the enhancement of lifetime.