• Parasites, Hosts and Diseases
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• v.50 no.1
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• pp.1-6
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• 2012

$Toxoplasma$ $gondii$ penetrates all kinds of nucleated eukaryotic cells but modulates host cells differently for its intracellular survival. In a previous study, we found out that serine protease inhibitors B3 and B4 (SERPIN B3/B4 because of their very high homology) were significantly induced in THP-1-derived macrophages infected with $T.$ $gondii$ through activation of STAT6. In this study, to evaluate the effects of the induced SERPIN B3/B4 on the apoptosis of $T.$ $gondii$-infected THP-1 cells, we designed and tested various small interfering (si-) RNAs of SERPIN B3 or B4 in staurosporine-induced apoptosis of THP-1 cells. Anti-apoptotic characteristics of THP-1 cells after infection with $T.$ $gondii$ disappeared when SERPIN B3/B4 were knock-downed with gene specific si-RNAs transfected into THP-1 cells as detected by the cleaved caspase 3, poly-ADP ribose polymerase and DNA fragmentation. This anti-apoptotic effect was confirmed in SERPIN B3/B4 overexpressed HeLa cells. We also investigated whether inhibition of STAT6 affects the function of SERPIN B3/B4, and vice versa. Inhibition of SERPIN B3/B4 did not influence STAT6 expression but SERPIN B3/B4 expression was inhibited by STAT6 si-RNA transfection, which confirmed that SERPIN B3/B4 was induced under the control of STAT6 activation. These results suggest that $T.$ $gondii$ induces SERPIN B3/B4 expression via STAT6 activation to inhibit the apoptosis of infected THP-1 cells for longer survival of the intracellular parasites themselves.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1240-1247
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• 2008

A twisted inverted-F antenna(TIFA) is proposed for a dual-band application. The TIFA features a twisted line for dual bands and a parasitic line for additional resonance. The proposed antenna has wideband characteristics at the high frequency band due to the merge of the resonances of the twisted line and the parasitic line. The electric size of the antenna is $0.109{\lambda}{\times}0.025{\lambda}{\times}0.0025{\lambda}$, whose length is about 44% of that of a conventional inverted-F antenna. The fabricated antenna on a thin FR4 substrate was measured to operate at 960 MHz with a bandwidth of 47 MHz, and at 1.8 GHz with a bandwidth of 289 MHz for $S_{11}$ less than -5 dB; the radiation efficiencies were 49% and 57%, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.2
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• pp.77-85
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• 2014

Recently, utilization of MIMO(Multi-Input Multi-Output) system using array antennas is evaluated significantly according to the extension of high-capacity and high-speed communication services. However, MIMO system has disadvantages such as high-complexity and high-power-consumption, because RF(Radio Frequency) chain is required as antenna number, and several array antenna is used in conventional MIMO system. In order to solve these problems, research about beamspace MIMO system using ESPAR(Electronically Steerable Parasitic Array Radiator) antenna that has single RF chain by using one active antenna and several parasitic elements has been studied actively. Beamspace MIMO system using ESPAR antenna is possible to solve the problems of conventional MIMO system, because this system is composed by single RF chain. In this paper, in order to improve the system security, chaos communication algorithm that has characteristics such as non-periodic, non-predictability, easy implementation and initial condition is applied to QPSK (Quadrature Phase Shift Keying) modulated beamspace MIMO system. We design the chaos QPSK modulated beamspace MIMO system, and evaluate SER performance of this system.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• Korean journal of applied entomology
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• v.60 no.3
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• pp.277-286
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• 2021

The natural enemy was identified as a parasitic wasp, Binodoxys communis Gahan. B. communis taxonomically belongs to the family braconidae, subfamily aphidinae, and genera binodoxys. It develops normally at 17.5 to 32.5℃, and not at 35℃. Depending on the temperature, the longest development period of B. communis was 21.9 days at 17.5℃, and shortest was 6.46 days at 32.5℃. The effective accumulated temperature was 175.44 DD for females as well as males; however, the developmental threshold temperature was 10.87℃ and 10.74℃ for females and males, respectively. This parasitic wasp was found to prefer cotton aphids and soybean aphids as its prey.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.398-405
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• 2018

LLC resonant converter is popular with industrial fields because it can be achieved high efficiency by zero voltage switching (ZVS). As interest grew, analysis of characteristics in LLC resonant converter have been actively studied. Generally, characteristic of LLC resonant converter is analyzed based on first harmonic approximation(FHA). The FHA analysis represents the characteristics of LLC resonant converter by obtaining the series resonant operation. FHA analysis of LLC resonant converter in load condition is correct. but it is not correct in no load condition. This paper proposed analysis of characteristics considering the parasitic components to overcome the limitation of FHA and analyze no-load characteristics. The validity of the proposed method has been investigated by simulation and experimental results.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.338-343
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• 2015

In order to avoid the interference from existing narrowband communication systems, this paper proposes a compact band-notched UWB (ultra wideband) antenna with size of $12mm{\times}22mm{\times}1.6mm$. Transmission line model is applied to analyzing wide impedance matching characteristic of the modified base antenna, which has a gradual stepped impedance feeder structure. The proposed antenna realizes dual band-notched function by combining two biased T-shaped parasitic elements on the rear side with a window aperture on the radiation patch. The simulation current distributions of the antenna reflect resonant suppression validity of the two methods. In addition, the measured radiation characteristics demonstrate the proposed antenna prevents signal interference from WLAN (5.15-5.825GHz) and WiMAX (3.4-3.69GHz) effectively, and the measured patterns show the antenna omnidirectional radiation in working frequencies.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.217-221
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• 2001

This paper presents a new prototype of soft-switching DC-DC power converter with a high frequency transformer link which has two active power controlled switches in full bridge rectifier with capacitor input type smoothing filter. In this DC-DC converter, ZVS of the inverter in transformer primary side and ZCS of active rectifier area in secondary side can be completely achieved by taking advantage of parasitic inductor component of high-frequency transformer and loss less snubbing capacitors. Its operation principle and salient features are described. The steady-state operating characteristics of the proposed DC-DC power converter are illustrated and discussed on the basis of the simulation results in addition to the experimental ones obtained by 2kw-40kHz power converter breadboard set up.