• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.195-203
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• 2020

This paper presents a parasitic inductance reduction design method for the stable driving of GaN HEMT. To reduce the parasitic inductance, we propose a vertical lattice loop structure with multiple loops that is not affected by the GaN HEMT package. The proposed vertical lattice loop structure selects the reference loop and designs the same loop as the reference loop by layering. The design reverses the current direction of adjacent current paths, increasing magnetic flux cancellation to reduce parasitic inductance. In this study, we validate the effectiveness of the parasitic inductance reduction method of the proposed vertical lattice loop structure.

• Journal of Power Electronics
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• v.16 no.3
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• pp.883-893
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• 2016

This paper presents a comprehensive analysis of the spurious turn-on phenomena in phase-shifted full-bridge (PSFB) converters. The conventional analysis of the spurious turn-on phenomenon does not establish in the PSFB converter as realizing zero voltage switching (ZVS). Firstly, a circuit model is proposed taking into account the parasitic capacitors and inductors of the transistors, as well as the parasitic elements of the power circuit loop. Second, an exhaustive investigation into the impact of all these parasitic elements on the spurious turn-on is conducted. It has been found that the spurious turn-on phenomenon is mainly attributed to the parasitic inductors of the power circuit loop, while the parasitic inductors of the transistors have a weak impact on this phenomenon. In addition, the operation principle of the PSFB converter makes the leading and lagging legs have distinguished differences with respect to the spurious turn-on problems. Design guidelines are given based on the theoretical analysis. Finally, detailed simulation and experimental results obtained with a 1.5 kW PSFB converter are given to validate proposed analysis.

• Journal of Power Electronics
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• v.18 no.3
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.706-713
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• 2010

In this paper, the small loop antenna with a parasitic loop structure for penta-band mobile phone application is proposed. This antenna is composed of a feed monopole, a radiating loop antenna with a parasitic loop structure and an additional radiating element. The antenna is printed on the very thin flexible substrate to mount on the dielectric carrier with a volume of 40 mm$\times$11 mm$\times$3 mm. The bandwidth of the proposed antenna is 402 MHz(773~1,175 MHz) for low band and 583 MHz(1,622~2,205 MHz) for high band. As a result, the proposed antenna covers the five bands of GSM850, GSM900, DCS1800, PCS1,900 and WCDMA for a 3:1 VSWR. Moreover, the radiation pattern, gain and efficiency are appropriate for mobile handset. Therefore, this antenna is suitable for small sized multi-band mobile handset applications.

• Journal of Power Electronics
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• v.18 no.4
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• pp.1255-1267
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• 2018

Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.5
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• pp.444-452
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• 1988

The LP(Log-periodic) type antenna composed of the cross fed and parasitic loop elements has been proposed for a high gain and broadband characteristics. This antenna has been analyzed by using moment method, and current distribution, input impedence, power gain, and radiation patterns has been calculated and compared with LPDA. It was found to have high gain, broadband characteristics, and similiar patterns for E and H plane against LPDA.

• Journal of Power Electronics
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• v.15 no.4
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• pp.1035-1046
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• 2015

This study presents a practical implementation of a multi-mode two-phase interleaved boost converter for fuel cell electric vehicle application. The main operating modes, which include two continuous conducting modes and four discontinuous conducting modes, are discussed. The boundaries and transitions among these modes are analyzed with consideration of the inductor parasitic resistance. The safe operational area is analyzed through a comparison of the different operating modes. The output voltage and power characteristics with open-loop or closed-loop operation are also discussed. Key performance parameters, including the DC voltage gain, input ripple current, output ripple voltage, and switch stresses, are presented and supported by simulation and experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.24-30
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• 2007

A windmill-shaped loop antenna is designed for polarization diversity. Its circumference is almost 10 times that of a conventional small loop antenna whose circumference is less than ${\lambda}/10$ but its the radiation pattern is omni-directional. An identical parasitic element is placed over the radiator to match the antenna input impedance. An equivalent transmission line and RLC circuit models are shown to fully describe for the windmill-shaped loop antenna. The proposed antenna has a bandwidth of 6 % with input VSWR less than 2:1 and a polarization purity of 15 dB at 2.6 GHz, and the gain of 1.5 dBi. The simulated and measured results show fairly good agreement.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.88-93
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• 2016

LCL filters are widely used in high-order harmonics attenuation of output currents in grid-connected inverters. However, output currents of grid-connected inverters with LCL filters can become unstable because of the resonance of the filters. Given that the characteristics of output currents in inverters mostly depend on filter performance, the exact analysis of filters by considering parasitic components is necessary for both harmonics attenuation and current control. LCL filters have three or four parasitic components: the series and/or parallel resistance of the filter capacitor and the series resistance of the two filter inductors. Most studies on LCL filters have focused on the parasitic components of the filter capacitor. Although several studies have addressed the parasitic components of the filter inductor at the inverter side, no study has yet investigated the concurrent effects of series resistance in both filter inductors in detail. This paper analyzes LCL filters by considering series resistance in both filter inductors; it proposes an active damping method based on the virtual series resistance of LCL filters. The performance of the proposed active damping is then verified through both simulation and experiment using Hardware-in-the-Loop Simulator(HILS).