• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1239-1243
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• 1997

A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.97-103
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• 2014

Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at $108{\pm}2^{\circ}C$ on heating and paraelectric phase to ferroelectric phase at $78{\pm}2^{\circ}C$ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.547-549
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• 2001

The dielectric constants and dielectric losses of ZrTiO$_4$thin films deposited by DC magnetron reactive sputtering were investigated. The paraelectric properties were measured in the 100kHz range. As the deposition temperature increased (up to 67$0^{\circ}C$), the dielectric losses (tan$\delta$) decreased (down to 0.017$\pm$0.007), while the dielectric constants ($\varepsilon$) were in the range of 35$\pm$7. Post annealing at 80$0^{\circ}C$ in oxygen for 2h reduced tan$\delta$ down to 0.005$\pm$0.001, higher than those of well-sintered bulk ZrTiO$_4$.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.396-403
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• 1996

In this paper, the (S $r_{0.85}$.C $a_{0.15}$)Ti $O_{3}$ of paraelectric grain boundary layer (GBL) ceramics were fabricated, and the analysis of microstructuye and the thermally stimulated current(TSC) were investigated for understanding effects of GBL's interfacial phenomenon on variations of electrical properties. As a result, the three peaks of .alpha., .alpha. and .betha. were obtained at the temperature of -20 [.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20[.deg. C] appears to show up by detrap of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase. and second phase.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1472-1475
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• 1996

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifIuoroethyIene over wide temperature range. The results were analyzed and discussed. The remanent polarization and the coercive field at room termperature were estimated to be 75 $mC/m^3$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transiation temperature$-20^{\circ}C$) and the remanent polarization and the coercive field were larger than larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at $90^{\circ}C$ on heating and $80^{\circ}C$ on cooling. Double hysteresis loops were observed at the temperature($85^{\circ}C$) of paraelectric phase.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.156-165
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• 1997

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifluoroethylene over wide temperature range. The remanent polarization and the coercive field at room temperature were estimated to be 75 mC/m$^{2}$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transition temperature(-20.deg. C) and the remanent polarization and the coercive field were larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at 90.deg. C on heating and 80'C on cooling. Double hysteresis loops were observed at the temperature(85.deg. C) of paraelectric phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.111-120
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• 1998

In this paper, the $(SrPb)(CaMg)TiO_3$ ceramics with paraelectric properties were fabricated by the mixed oxide method. It was investigated that which the variation of contents of $Bi_2O_3{\cdot}3TiO_2$ effects on structural, dielectrical and electrical properties of specimens. As a result, the grain size were grown with increasing the contents of $Bi_2O_3{\cdot}3TiO_2$. The relative dielectric constants were increased up to 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$, and decreased more or less at a low temperature in the specimens which had more than. But the temperature coefficient. of capacitance were showed ${\pm}25$[%]. The dielectric loss were less than 0.05 in all specimens which had more than 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$. In order to investigate the behavior of charged particles, the characteristics of electrical conduction were measured. As a result, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to space charge which injected from electrode, above 40[kV/cm].

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.