• Title/Summary/Keyword: Page Replacement Policy

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LDF-CLOCK: The Least-Dirty-First CLOCK Replacement Policy for PCM-based Swap Devices

  • Yoo, Seunghoon;Lee, Eunji;Bahn, Hyokyung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.68-76
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    • 2015
  • Phase-change memory (PCM) is a promising technology that is anticipated to be used in the memory hierarchy of future computer systems. However, its access time is relatively slower than DRAM and it has limited endurance cycle. Due to this reason, PCM is being considered as a high-speed storage medium (like swap device) or long-latency memory. In this paper, we adopt PCM as a virtual memory swap device and present a new page replacement policy that considers the characteristics of PCM. Specifically, we aim to reduce the write traffic to PCM by considering the dirtiness of pages when making a replacement decision. The proposed replacement policy tracks the dirtiness of a page at the granularity of a sub-page and replaces the least dirty page among pages not recently used. Experimental results with various workloads show that the proposed policy reduces the amount of data written to PCM by 22.9% on average and up to 73.7% compared to CLOCK. It also extends the lifespan of PCM by 49.0% and reduces the energy consumption of PCM by 3.0% on average.

The Least-Dirty-First CLOCK Replacement Policy for Phase-Change Memory based Swap Devices (PCM 기반 스왑 장치를 위한 클럭 기반 최소 쓰기 우선 교체 정책)

  • Yoo, Seunghoon;Lee, Eunji;Bahn, Hyokyung
    • Journal of KIISE
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    • v.42 no.9
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    • pp.1071-1077
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    • 2015
  • In this paper, we adopt PCM (phase-change memory) as a virtual memory swap device and present a new page replacement policy that considers the characteristics of PCM. Specifically, we aim to reduce the write traffic to PCM by considering the dirtiness of pages when making a replacement decision. The proposed policy tracks the dirtiness of a page at the granularity of a sub-page and replaces the least dirty page among the pages not recently used. Experimental results show that the proposed policy reduces the amount of data written to PCM by 22.9% on average and up to 73.7% compared to CLOCK. It also extends the lifespan of PCM by 49.0% and reduces the energy consumption of PCM by 3.0% on average.

Page Replacement Policy for Memory Load Adaption to Reduce Storage Writes and Page Faults (스토리지 쓰기량과 페이지 폴트를 줄이는 메모리 부하 적응형 페이지 교체 정책)

  • Bahn, Hyokyung;Park, Yunjoo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.6
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    • pp.57-62
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    • 2022
  • Recently, fast storage media such as phage-change memory (PCM) emerge, and memory management policies for slow disk storage need to be revisited. In this paper, we propose a new page replacement policy that makes use of PCM as a swap device of virtual memory systems. The proposed policy aims at reducing write traffic to the swap device as well as reducing the number of page faults pursued by traditional page replacement policies. This is because a write operation in PCM is slow and PCM has limited write endurances. Specifically, the proposed policy focuses on the reduction of page faults when the memory load of the system is high, but it aims at reducing write traffic to storage when free memory space is sufficient. Simulation experiments with various memory reference traces show that the proposed policy reduces write traffic to PCM without performance degradations.

A Working-set Sensitive Page Replacement Policy for PCM-based Swap Systems

  • Park, Yunjoo;Bahn, Hyokyung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.7-14
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    • 2017
  • Due to the recent advances in Phage-Change Memory (PCM) technologies, a new memory hierarchy of computer systems with PCM is expected to appear. In this paper, we present a new page replacement policy that adopts PCM as a high speed swap device. As PCM has limited write endurance, our goal is to minimize the amount of data written to PCM. To do so, we defer the eviction of dirty pages in proportion to their dirtiness. However, excessive preservation of dirty pages in memory may deteriorate the page fault rate, especially when the memory capacity is not enough to accommodate full working-set pages. Thus, our policy monitors the current working-set size of the system, and controls the deferring level of dirty pages not to degrade the system performances. Simulation experiments show that the proposed policy reduces the write traffic to PCM by 160% without performance degradations.

Recency and Frequency based Page Management on Hybrid Main Memory

  • Kim, Sungho;Kwak, Jong Wook
    • Journal of the Korea Society of Computer and Information
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    • v.23 no.3
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    • pp.1-8
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    • 2018
  • In this paper, we propose a new page replacement policy using recency and frequency on hybrid main memory. The proposal has two features. First, when a page fault occurs in the main memory, the proposal allocates it to DRAM, regardless of operation types such as read or write. The page allocated by the page fault is likely to be high probability of re-reference in the near future. Our allocation can reduce the frequency of write operations in PCM. Second, if the write operations are frequently performed on pages of PCM, the pages are migrated from PCM to DRAM. Otherwise, the pages are maintained in PCM, to reduce the number of unnecessary page migrations from PCM. In our experiments, the proposal reduced the number of page migrations from PCM about 32.12% on average and reduced the number of write operations in PCM about 44.64% on average, compared to CLOCK-DWF. Moreover, the proposal reduced the energy consumption about 15.61%, and 3.04%, compared to other page replacement policies.

Caching and Prefetching Policies Using Program Page Reference Patterns on a File System Layer for NAND Flash Memory (NAND 플래시 메모리용 파일 시스템 계층에서 프로그램의 페이지 참조 패턴을 고려한 캐싱 및 선반입 정책)

  • Kim, Gyeong-San;Kim, Seong-Jo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.777-778
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    • 2006
  • In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.

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An Optimized NUR Page Replacement Policy Considering the Recent Page Reference Frequency (최근 페이지 참조 빈도를 고려한 최적화된 NUR 페이지 교체 정책)

  • Min, Kyeong-Kuk;Kim, Young-Kyu;Bae, Kyeong-ryeol;Moon, Byungin
    • Proceedings of the Korea Information Processing Society Conference
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    • 2012.11a
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    • pp.282-283
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    • 2012
  • 가상메모리 시스템에서 페이지 부재(page fault)를 최소화하기 위해서는 미래에 사용될 페이지를 미리 예측하는 것이 중요하다. 미래에 사용될 페이지는 이미 입력된 페이지들의 패턴 분석을 통해 예측 가능하며 이를 통해 시스템 성능을 최대화 할 수 있는 페이지 교체 정책(page replacement policy)에 대한 연구가 필요하다. 본 논문에서는 동일한 교체 우선권을 가지는 페이지들 간의 예측 적중률을 높이기 위하여 기존의 NUR(not used recently) 정책에 참조횟수 비트를 추가하여 우선 순위를 판단하는 방법을 제안한다. 제안하는 정책은 C 언어를 기반으로 모델링 되었으며 시뮬레이션 결과 페이지 프레임의 크기와 무관하게 기존의 정책들에 비해 성능이 향상됨을 확인하였다.

A novel page replacement policy associated with ACT-R inspired by human memory retrieval process (인간 기억 인출 과정을 응용하여 설계된 ACT-R 기반 페이지 교체 정책)

  • Roh, Hong-Chan;Park, Sang-Hyun
    • The KIPS Transactions:PartD
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    • v.18D no.1
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    • pp.1-8
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    • 2011
  • The cache structure, which is designed for assuring fast accesses to frequently accessed data, resides on the various levels of computer system hierarchies. Many studies on this cache structure have been conducted and thus many page-replacement algorithms have been proposed. Most of page-replacement algorithms are designed on the basis of heuristic methods by using their own criteria such as how recently pages are accessed and how often they are accessed. This data-retrieval process in computer systems is analogous to human memory retrieval process since the retrieval process of human memory depends on frequency and recency of the retrieval events as well. A recent study regarding human memory cognition revealed that the possibility of the retrieval success and the retrieval latency have a strong correlation with the frequency and recency of the previous retrieval events. In this paper, we propose a novel page-replacement algorithm by utilizing the knowledge from the recent research regarding human memory cognition. Through a set of experiments, we demonstrated that our new method presents better hit-ratio than the LRFU algorithm which has been known as the best performing page-replacement algorithm for DBMS caches.

FRM: Foundation-policy Recommendation Model to Improve the Performance of NAND Flash Memory

  • Won Ho Lee;Jun-Hyeong Choi;Jong Wook Kwak
    • Journal of the Korea Society of Computer and Information
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    • v.28 no.8
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    • pp.1-10
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    • 2023
  • Recently, NAND flash memories have replaced magnetic disks due to non-volatility, high capacity and high resistance, in various computer systems but it has disadvantages which are the limited lifespan and imbalanced operation latency. Therefore, many page replacement policies have been studied to overcome the disadvantages of NAND flash memories. Although it is clear that these policies reflect execution characteristics of various environments and applications, researches on the foundation-policy decision for disk buffer management are insufficient. Thus, in this paper, we propose a foundation-policy recommendation model, called FRM for effectively utilizing NAND flash memories. FRM proposes a suitable page replacement policy by classifying and analyzing characteristics of workloads through machine learning. As an implementation case, we introduce FRM with a disk buffer management policy and in experiment results, prediction accuracy and weighted average of FRM shows 92.85% and 88.97%, by training dataset and validation dataset for foundation disk buffer management policy, respectively.

Active Page Replacement Policy for DRAM & PCM Hybrid Memory System (DRAM&PCM 하이브리드 메모리 시스템을 위한 능동적 페이지 교체 정책)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.13 no.5
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    • pp.261-268
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    • 2018
  • Phase Change Memory(PCM) with low power consumption and high integration attracts attention as a next generation nonvolatile memory replacing DRAM. However, there is a problem that PCM has long latency and high energy consumption due to the writing operation. The PCM & DRAM hybrid memory structure is a fruitful structure that can overcome the disadvantages of such PCM. However, the page replacement algorithm is important, because these structures use two memory of different characteristics. The purpose of this document is to effectively manage pages that can be referenced in memory, taking into account the characteristics of DRAM and PCM. In order to manage these pages, this paper proposes an page replacement algorithm based on frequently accessed and recently paged. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the energy-delay product by around 10%, compared with Clock-DWF and CLOCK-HM.