• Title/Summary/Keyword: PZT Film

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Electrical properties of sol-gel derived $ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ thin film (Sol-Gel 법에 의한$ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$)

  • 임무열;구경완;한상옥
    • Electrical & Electronic Materials
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    • v.10 no.2
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    • pp.134-140
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    • 1997

  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

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A Study of the Ferroelectric Properties of PbZr0.4Ti0.6O3 (PZT) Grains Using Kelvin Force Microscopy Analysis

  • Heo, Jin-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.275-278
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    • 2010

  • We have examined the Ferroelectric properties of $PbZr_{0.4}Ti_{0.6}O_3$ (PZT) grains by monitoring the surface potential through the utilization of Kelvin force microscopy. Hysteretic and time dependent behaviors of small and large grains were compared with each other. The smaller grain yields had smaller values of surface potential. However, the normalized voltage versus surface potential behavior indicates that the smaller grains became saturated earlier with respect to the writing voltages than did the larger grains. On the other hand, the surface potential hysteresis loop obtained from the smaller grains showed a similar shape to what might be obtained from a Zr rich PZT film. In contrast the hysteresis loop of the larger grain looks like that obtained from a Ti-rich film. In addition, the time dependent behaviors of the smaller grains also revealed a better response than the response of larger grains. The overall ferroelectric properties of the smaller grains seem better than corresponding properties for larger grains. The Ti/Zr ratio of the PZT film which was examined in this study was 60/40.

  • https://doi.org/10.4313/TEEM.2010.11.6.275 인용 PDF KSCI