• Title/Summary/Keyword: PZT(Pb〔Zr,Ti〕O$_3$)

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Effect of the hydrogen annealing on the $Pb(Zr_{0.52}Ti_{0.48})O_3$ film using $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffers ($(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffer를 사용한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 수소 후열처리 효과)

  • Lee, Eun-Sun;Li, Dong-Hua;Chung, Hyun-Woo;Lim, Sung-Hoon;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.191-194
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    • 2004
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

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A study on the Structural Properties of PZT/BT thick film (PZT/BT 세라믹 후막의 구조적 특성에 관한 연구)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.57-59
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

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Bi(Me)$O_3$의 치환에 따른 $(1-x)PbZrO_3-xPbTiO_3$세라믹 재료의 압전특성 및 큐리온도 변화

  • Lee, Seong-Chan;Lee, Myeong-Hwan;Seong, Yeon-Su;Jo, Jong-Ho;Kim, Myeong-Ho;Song, Tae-Gwon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.30.1-30.1
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    • 2009
  • PZT(Pb(Zr, Ti)$O_3$ 압전세라믹스는 뛰어난 압전 특성과 강유전 특성을 가지고 있어서 현재 널리 사용되고 있다. 하지만 PZT세라믹스는 큐리온도 이상에서 그 특성을 잃게 되고 높은 온도에서의 응용이 제한된다. 따라서 높은 큐리온도를 가지는 압전체를 개발하기 위한 연구가 많이 이루어지고 있다. $PbTiO_3$의 경우에는 $Bi(Zn_{0.5}Ti_{0.5})$, $BiFeO_3$등의 Bi계 세라믹스를 치환하면서 큐리온도가 올라가는 결과가 보고되고 있다. 하지만 이것은 PZT세라믹스 보다 압전 및 유전 특성이 상당히 낮다. 따라서 본 연구에서는 $(1-x)PbZrO_3-xPbTiO_3$조성에 Bi(Me)$O_3$(Me:Zn, Ti, Fe, Al)를 치환하여 압전특성 및 강유전 상전이 온도를 조사하였다. 모든 시편들은 고상반응법으로 제조하였고, 제조한 시편으로 조성에 따른 압전특성 및 유전특성의 변화를 측정하였다. 그리고 이를 통해 큐리온도는 PZT의 MPB조성근처에서 Bi계 세라믹의 치환은 $T_C$가 낮아 졌으나, Tetragonal 상을 가지고 있는 Ti-rich인 조성에서는 $T_C$가 높아지는 것을 관찰하였다.

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The preparation of Pb(Zr0.53Ti0.47)O3 powders for low temperature densification (저온 소결성이 우수한 Pb(Zr0.53Ti0.47)O3 계 압전 분말 제조)

  • Lee, Yonghui;Baek, In Chan;Seok, Sang Il
    • Particle and aerosol research
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    • v.4 no.1
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    • pp.21-25
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    • 2008
  • $Pb(Zr_{0.53}Ti_{0.47})O_3$ (PZT) was synthesized by a multiple wet dry process. Precipitates prepared from reaction between $ZrOCl_2{\cdot}8H_2O$ and $TiOCl_2$ and $NH_4OH$ in an aqueous solution was dried at $100^{\circ}C$, and calcined at $500^{\circ}C$ and $700^{\circ}C$. The mixture mixed with PbO and as-dried or calcined $Zr_{0.53}Ti_{0.47}O_4$ (ZT) powders was calcined again at 700 and $800^{\circ}C$. Well crystallized ZT and PZT were formed at even $700^{\circ}C$. PZT piezoelectric ceramics of more than 98.5% in a relative density was obtained by sintering at as low as $900^{\circ}C$.

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Electrode Dependence of Asymmetric Behavior of (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ Thin Film Capacitors ((La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃박막 캐패시터의 비대칭성의 전극 의존성)

  • 최치홍;이재찬;박배호;노태원
    • Journal of the Korean Ceramic Society
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    • v.35 no.7
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    • pp.647-647
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    • 1998
  • (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

Electrical Properties of PZT/BT Mulitilayered Films (PZT/BT 박막의 전기적 특성)

  • Lee, Sang-Heon;Nam, Sung-Pil;Lee, Young-Hie;Park, Jae-Jun
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.189-190
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

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Structural Properties of PZT BT Mulitilayered Films (PZT BT 이종 박막의 구조적 특성)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1960-1961
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

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Sol-Gel Template Synthesis and Characterization of PT, PZ and PZT Nanotubes (PT, PZ와 PZT나노튜브의 졸-겔 형판합성과 특성)

  • Jang, Gi Seok;Bernadette A. Hernandez;Ellen R. Fisher;Peter K. Dorhout
    • Journal of the Korean Chemical Society
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    • v.46 no.3
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    • pp.242-251
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    • 2002
  • We report the synthesis and characterization of the perovskite nanotubes made by sol-gel template syn-thesis.Both lead titanate (PbTiO3 : PT), lead zirconate (PbZrO3 : PZ) and lead zirconium titanate (PbZrO3 -PbTiO3 : PZT) solid solution nanotubes were prepared with a chelate sol-gel of titanium isopropoxide (Ti(OPri)4 ), zirconium tet-rabutoxide (Zr(OBu)4 ) and the respective lead acetate (Pb(OAc)2 -3H2O). WhatmanRanodisc membranes, with a 200nm pore size, served as the template. After the removal of the template in the 6M-NaOH, scanning electron microscopy shows that the shapes formed are 200 nm outer diameter tubes with 50mm lengths. Transmission electron microscopy and electron diffraction reveal that the tubes are polycrystalline. The PT nanotubes so far have shown an anomalous transition temperature, 234.4$^{\circ}C$ as measured by DSC with a small particle size, 15.4 nm determined by X-ray analysis with the aid of Scherrer's equation.

Effect of Excess and Deficiency of PbO on the Sintering and Electrical Properties of PZT Ceramics (PbO 과잉 및 결핍이 PZT 세라믹스의 소결 및 전기적 특성에 미치는 영향)

  • 임진호;김진호;조상희
    • Journal of the Korean Ceramic Society
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    • v.31 no.6
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    • pp.581-586
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    • 1994
  • Effect of excess and deficiency of PbO on the sintering and electrical properties of tetragonal Pb(Zr0.5Ti0.5)O3 were investigated. Fired density revealed maximum value with 4 wt% of excess PbO, and decreased with increasing amount of both excess and deficient PbO. Grain size increased with excess PbO, and decreased with deficiency of PbO. It appeared that excess PbO forms a liquid phase to enhance grain growth and completely volatilizes after sintering, whereas ZrO2 particles formed in PbO-deficient PZT inhibit grain growth. The change in the values of the equivalent circuit elements of PZT corresponded well with thar of porosity formed by excess and deficiency of PbO; kp, Co and Cm decreased while Qm, Rm and Lm increased conosiderably with porosity. This change was more pronounced in PbO-deficient type probably due to change in Zr/Ti ratio of PZT.

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Characterization of Sol-gel Coated Pb(ZrTi)O3 Thin film for Piezoelectric Vibration MEMS Energy Harvester (압전 MEMS 진동에너지 수집소자를 위한 졸겔 공법기반의 Pb(ZrTi)O3 박막의 특성 분석 및 평가)

  • Park, Jong-C.;Park, Jae-Y.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1240_1241
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    • 2009
  • In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

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