• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1181-1186
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• 2008

A impedance model simulating the electrical characteristics of the External Electrode fluorescent lamp operated at high frequency is proposed. The model is constructed from a two parameter equation which is derived based on a set of two measurements. This is a readily constructed and computer simulator oriented model which is suitable for a preliminary design of electronic ballasts. Simulated and experimental results are used to verify the analytical discussions, and moreover, an electronic ballast design example using the proposed model is presented to further demonstrate its application.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.5
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• pp.106-111
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• 2007

After the semiconductor processing, wafer is attracted by ESC(Electrostatic Chuck) with remaining electric charge. That causes too many problems for examples, sliding of wafer, popping or broken. This paper presents the model of ESC for silicon wafer, which is modeled by electrical circuit component such as capacitor. The simulations using PSpice result in the phenomenon of silicon wafer was charged by ESC. In this paper we suggest the discharging method. for wafer.

• Proceedings of the KIEE Conference
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• 2005.07d
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• pp.3019-3021
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• 2005

In this paper we suggest a novel temperature detection method utilized in direct over-temperature protection circuit modeling. The suggested model detects temperature variation using Rds(on) characteristics of MOSFET, while the conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. The temperature-dependant MOSFET model is implemented using Spice ABM(Spice Analog Behavior Model). The direct over-temperature protection circuit was designed including it. We verified effectiveness of the temperature dependant Rds(on) model characteristics and performance of the direct over-temperature protection circuit on PSpice simulation

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.168-173
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• 2002

Electrostatic discharge characteristics were studied by connecting human body model (HBM) with tunneling magnetoresistance (TMR) device in this research. TMR samples were converted into electrical equivalent circuit with HBM and it was simulated utilizing PSPICE. Discharge characteristics were observed by changing the component values of the junction model in this equivalent circuit. The results show that resistance and capacitance of the TMR junction were determinative components that dominate the sensitivity of the electrostatic discharge(ESD). Reducing the resistance oi the junction area and lead line is more profitable to increase the recording density rather than increasing the capacitance to improve the endurance for ESD events. Endurance at DC state was performed by checking breakdown and failure voltages for applied DC voltage. HBM voltage that a TMR device could endure was estimated when the DC failure voltage was regarded as the HBM failure voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.11
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• pp.493-497
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• 2005

This paper dealt with the influence of harmonic voltages on arrester diagnostics and its compensation method by using a designed Pspice arrester model. A pure sinusoidal voltage and its 3$^{rd}$ harmonic voltage were applied to the model, and the leakage current components were analyzed. The simulation results have shown that the peak value of resistive leakage current depends not only on the phase of the 3$^{rd}$ harmonic voltage but also on the magnitude of it. In this paper, an approximated 5$^{th}$ order polynomial formula by the Least-Square-Technique was derived, and correction factors which compensate the error caused by the 3$^{rd}$ harmonic voltage were calculated.

• Proceedings of the KIPE Conference
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• 1997.07a
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• pp.216-221
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• 1997

At present, high frequency electronic ballast are widely used to drive the fluorescent lamp at high frequency for improving light quality. The electronic ballast mainly consist of an inverter stage with a load resonant circuit. This paper derives a lamp model consist of a voltage equation and a current equation. The proposed model is useful for an engineer to determine circuits and to analyze the performance of electronic ballast with high frequency operation. Simulation with PSPICE and experimentator and the high power factor of the proposed topology.

• Current Optics and Photonics
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• v.1 no.5
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• pp.529-537
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• 2017

We explored how changes in blood vessel compliance affected the systolic rise time (SRT) of the maximum blood pressure (BP) peak wave and the diastolic fall time (DFT) of the minimal BP peak wave, compared to photoplethysmograpic (PPG) parameters, using a two-compartment, second-order, arterial Windkessel model. We employed earlier two-compartment Windkessel models and the components thereof to construct equivalent blood vessel circuits, and reproduced BP waveforms using PSpice technology. The SRT and DFT values were obtained via circuit simulation, considering variations in compliance (the dominant influence on blood vessel parameters attributable to BP changes). And then performed regression analysis to identify how compliance affected the SRT and DFT. We compared the SRTs and DFTs of BP waves to the PPG values by reference to BP changes in each subject. We confirmed that the time-shift propensities of BP waves and the PPG data were highly consistent. However, the time shifts differed significantly among subjects. These simulation and experimental results allowed us to construct an initial trend curve of individual BP peak time (measured via wrist PPG evaluations at three arm positions) that facilitated accurate individual BP estimations.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1184-1186
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• 2002

Recently, according to the industrial development relative to multimedia, demand of display system is radically increase, thus development for power supply of back-lighting is advanced lively. Fluorescent lamp operated at high frequency by the electronic ballast provide benefits like unnoticeable flicker effect and higher luminous efficiency. This paper presents analysis of Push-Pull type resonant inverter for CCFL drive for stable characteristic and life improvement of fluorescent lamp operated at high frequency. Also it has proposed design procedure of Current-Fed type resonant inverter. On the basis of equivalent circuit, component characteristic and suitable region of operation frequency from simulation using Matlab and Pspice is predicted. Suitability of applied equivalent model and validity of design process from the experimental results with CCFL inverter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.5
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• pp.509-520
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• 1992

AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.42-46
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• 2003

Arresters are deteriorated by overvoltages or impulse currents, and the resistive leakage current of arresters increases as the deterioration of the arrester progresses, showing an increase in the 3$^{rd}$ harmonic component of the leakage current. In this reason, arrester diagnostic techniques based on the 3$^{rd}$ harmonic leakage current as a reference parameter of deterioration are widely used. The technique, however, includes an error due to the harmonics of power system voltage. Therefore, the influence of the harmonics on arrester diagnostics should be considered. In this paper, we designed a PSpice ZnO arrester model to simulate the influence of the voltage harmonics described above. A pure sinusoidal voltage and its the 3r harmonic voltage were applied to the model, and the leakage current components were analyzed. From the simulation results, it is confirmed that the peak value of resistive leakage current depends not only on the phase of the 3$^{rd}$ harmonic voltage but also on the magnitude of it. Consequently, the errors caused 1)y the harmonic voltage could be minimized by correcting the magnitude of leakage current upon analyzing the harmonics.cs.