• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.544-548
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• 2008

At the semiconductor industry, Photoresist(PR) strip progress has high cost and time consuming process. Accordingly, many research group have been focused on the shortening of the PR strip progress. But the replacements of newly developed materials rather than normally used strip have accompanied by cost consumption. Therefore, we suggested the Plasma Liquid-Vapor Activation (PLVA) method of general PR strip solution for saving the PR strip time and the high strip rate of PR residue. The PLVA method was very effective for PR strip progress. Also, the ion damaged PR(high dose implanted photoresist: HDI-PR) was almost impossible to strip. However, it was very difficult to characterize the change of chemical composition of HDI-PR between with and without PLVA method. Thus, physical properties of HDI-PR surface with and without PLVA method were measured by using the nano-indenter system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.242-242
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• 2008

반도체 공정에서 일정한 패턴을 만들기 위하여 Photoresist (PR)를 이용한 식각 공정을 사용하게 된다. 이러한 식각 공정은 반도체 직접도가 증가되면서 더욱 많은 단계의 공정을 요구하게 되었다. 그러나 식각 공정의 증가는 반도체 소자 생산을 위한 더 많은 시간과 비용을 요구하게 된다. 이를 해결하기 위하여 Photoresist를 사용하지 않은 공정으로 공정 단계를 간소화하기 위한 연구를 진행하고 있지만 아직 명확한 대한은 없다. 본 연구에서 는 PR의 strip 시간을 최대한 단축시키고 PR strip 잔여물의 빠른 제거를 위하여 기존 공정에서 사용 중인 strip 약 액을 플라즈마에 의하여 활성화하는 방법으로 PR strip 시간을 최대한 줄이는 방법에 대한 연구를 진행하였으며, 활성화된 strip용액이 더욱 빠른 strip율을 나타내는 것을 확인하였다. 또한 약액 활성화 방법으로 활성화된 strip 용액으로 PR을 일부 제거한 후 PR 표면의 물리적 특성 변화를 분석하여 약액 활성화된 strip 용액으로 인한 PR의 특성을 물리적 방법으로 접근하여 연구를 진행하였다.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.113-116
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• 2008

As the integration in semiconductor display develops, semiconductor process becomes multilayer. In order to form several layer patterns, etching process which uses photoresistor (PR) must be performed in multilayer process. Repeated etching processes which take long time and PR residue cause mortal problems in semiconductor. To overcome such problems, we studied about the solution which eliminates PR effectively by using normal dry and wet etching method using plasma activated PR strip solvent in liquid condition. At first, we simulate the device which activates the plasma and make sure whether gas flow in device is uniform or not. Under activated plasma, etching effect is elevated. This improvement reduces etching time as well as display production time of semiconductor process. Generally, increasing etching process increases environmental hazards. Reducing etching process can save the etchant and protect environment as well.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.22-27
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• 2007

we have been studied on the realization of the boundary layer controlled ozone process and related facilities in order to apply for the photo-resist strip process in the semiconductor and flat panel display manufacturing. By means of developing the technology for the high concentration ozone production, it was possible to realized the boundary layer control ozone process by vapor. As a result of the silicon wafer PR strip test, we obtained the strip rate of about 400nm/min at the ozone concentration of 16wt% and flow rate of 8[liter/min.].

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.747-750
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• 2007

This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing etch, PR strip and cleaning condition. Charges distributed along the metal line acts as a source of tungsten (W) plug corrosion when associated with following cleaning solution. In cleaning process after metal etch and PR strip, chemical selection is significantly important in terms of metal corrosion. Optimal corrosion preventive PH, no metal attack (choice of optimal inhibitants), high by product removal efficiency and optimal de ionized water treatment condition is critical to the metal corrosion prevention.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.22-23
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• 2006

A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.13-19
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• 2004

We have been studied on the high concentration ozonized water production technology which substitute for the SPM wet cleaning solution process as the PR strip process after the photolithography process in the semiconductor and flat panel display manufacturing. In this work, we have developed the surface discharge type ozone generator which has the characteristics of the 12 ［wt%］ ozone concentration at the oxygen gas flow of 0.5［ℓ/min］ oxygen per cell and also developed the high efficiency ozone contactor for the mixing ozone gas with deionized water. As the production test results of the ozonized water, we obtained the ozonized water concentration above 80［ppm］ at the 10［wt%］ ozone gas concentration, and also had a good result of the PR strip rate of 147［nm/min］. at the 70［ppm］ ozonized water.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.977-982
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• 2007

The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.4
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• pp.281-289
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• 2016

Agitation is a secondary process used to increase the PR stripping force on an ITO-glass surface; it is an efficient approach to stripping during production. It activates the stripper to chemically penetrate the PR layer and assists by breaking down the physical bonding forces at the surface. In this study, different stripping tests were conducted by varying the dipping time, the composition, the strip temperature, and the stripper concentration. Optimal PR strip conditions were estimated by using comparative visual inspection of stripped sample surfaces. The stripping process was affected by changes in the moving speeds and the sample positions. It was confirmed that the stripping capability improved at a dilute stripper ratio of 20-40% and a strip temperature of $30-40^{\circ}C$ and within 60 s of strip time.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2525-2531
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• 2012

Al-Cu alloy has been used as a circuit material for its low resistance and ease to process for long years at CMOS technology. However, basically metal is very susceptible to corrosion and which has been a long pending trouble in various fields using metal. The defect causes the reliability concerns, so improved methods are necessary to reduce the defect. In the various corrosion parameters, PR strip process conditions after metal etch and optimal cleaning solutions are controllable and increase the process margin to prevent the metal corrosion. This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing PR strip process condition and cleaning condition.