• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1711-1716
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• 2008

The reaction of copper(II) chloride with phenyl-N-[(pyridine-2-yl)methylene]methaneamide (ppmma) leads to a new $\mu$ -chloro bridged dimeric [Cu(ppmma)$Cl_2$]$_2$ complex, whereas a reaction of copper(II) bromide with ppmma affords a monomeric Cu(ppmma)$Br_2$ complex. Both complexes have been characterized by X-ray crystallography and electronic absorption spectroscopy. The crystal structural analysis of [Cu(ppmma)$Cl_2$]$_2$ shows that the two Cu(II) atoms are bridged by two chloride ligands, forming a dimeric copper(II) complex and the copper ion has a distorted square-pyramidal geometry ($\tau$ = 0.2). The dimer units are held through a strong intermolecular $\pi-\pi$ interactions between the nearest benzyl rings. On the other hand, Cu(ppmma)Br2 displayed a distorted square planar geometry with two types of strong intermolecular π-π interaction. EPR spectrum of [Cu(ppmma)$Cl_2$]$_2$ in frozen glas s at 77 K revealed an equilibrium between the mononuclear and binuclear species. The magnetic susceptibilities data of [Cu(ppmma)$Cl_2$]$_2$ and Cu(ppmma)$Br_2$ follow the Curie-Weiss law. No significant intermolecular magnetic interactions were examined in both complexes, and magnetic exchange interactions are discussed on the basis of the structural features.

• Electrical & Electronic Materials
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• v.3 no.2
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• pp.115-122
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• 1990

플라즈마중합 에틸메타아크릴레이트(PPMMA) 박막의 유전특성인 유전정접(tan .delta.)과 정전용량(C)을 관측하고 산화와 열처리 및 플라즈마처리로 인한 PPMMA의 tan .delta.와 C의 변화에 대하여 연구하였다. 측정온도 25.deg.C, 측정주파수 1KHz에서 1MHz의 범위에서 PPMMA 박막은 CO와 -OH같은 산화물의 생성으로 인하여 tan .delta. 와 C는 증가하고 tan .delta.는 측정주파수 내에서 피이크를 형성한다. 이는 PPMMA내에 잔류하는 저분자량 성분과 자유라디칼의 존재와 공기중에서의 산화가 그 원인이라 할 수 있다. 본연구에서는 PPMMA박마그이 열처리 및 플라즈마처리를 하여 저분자량 성분과 라디칼을 제거하고 산화를 방지하여 박막의 유전특성을 개선하였다.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.304-306
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• 1987

The dielectric loss ($tan{\delta}$) and the Capacitance (C) of the PPMKA(plasma-polymerized methyl metacrylate) films were measured in the frequency range of 1KHz - 5MHz at $25^{\circ}C$. The effects of the oxidation and the heating and the plasma treatment for $tan{\delta}$ and C of PMMA were investigated. Dielectric loss of PPMMA films was inceased with the oxidized products like CO and OH. As condidates for their origin the existence of low molecula moieties and free radicals in the PPMMA, and the crosslinking made by the heating and plasma treatment have been considered.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.283-285
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• 1987

Transient conduction current (I - t characteristics) were measured in thin PPMMA (plasma-polymerized methyl methacrylate) films over the temperature range $60^{\circ}C-140^{\circ}C$ and the applied voltage range 3V - 30V. The current, which increased with temperature rise at constant applied voltage, showed less absorption current (current decay with time) at higher temperature region compared with those at lower temperature region. And the current, which increased with applied voltage rise at the constant temperature, showed less absorption current at higher voltage compared with those at lower voltage. The electric field current density characteristic curves were abtained from the conduction current values were after applying voltage for 30 minutes. And transient conduction currents were analyzed with high field conduction theories.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1876-1877
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• 2005

유기 전기 발광 소자(Organic Light-emitting Devices, OLEDs)의 발광 효율과 안정성을 향상시키고자 플라즈마 중합 장비를 이용해서 소자에 버퍼층(buffer layer)을 도입하였다. 플라즈마 중합 방법을 이용해서 성막된 PPMMA를 ITO와 정공 수송층 사이에 버퍼층으로 삽입하여 유기 전기 발광 소자를 제작하였고, 그 특성에 대하여 연구하였다. 기존에 사용되고 있는 버퍼층 공정에 비하여 공정의 단순화 및 비용절감의 효과를 기대할 수 있고, 전기-광학적 특성도 확인할 수 있었다.