• Title/Summary/Keyword: PHOSPHOR

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LED Delamination Evaluating Method by Thermal Shock Test (열충격시험을 통한 LED 박리 평가법에 관한 연구)

  • Jang, In-Hyeok;Han, Ji-Hoon;Ko, Min-ji;Lee, Young-Joo;Lim, Hong-Woo
    • Journal of Advanced Engineering and Technology
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    • v.6 no.2
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    • pp.121-124
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    • 2013
  • This paper proposed a new concept of estimating method for LED(light-emitting diode) delamination with high accuracy. Usually, The LED is composed several materials which are LED chips, gold wire, phosphor, epoxy resin, adhesive, reflector and lead frame. These different materials are usually delaminated in a trouble conditions which are huge temperature difference, hot and humid or mechanical shocked. When the components are delaminated, a luminance will be lost, moisture be absorbed easily and a thermal resistance be increased attendantly. As a conventional method to estimate a delamination of LEDs, a solution immersing method is usually used in a field of LED manufacturing companies or researching institutes. This method has an advantage of simplicity but it is only shown that the existence of delamination or not. In this paper, we have proposed an estimating method for LEDs delamination using the polishing and the electron microscope. New proposed method has shown the result of confirming delamination without destruction and enabled quantitative analysis for LED delamination.

Study on Quantum Dot Components and Their Use in High Color Rendering Lighting (양자점 부품과 이를 활용한 고연색성 조명 연구)

  • Jae-Hyeon Ko
    • Korean Journal of Optics and Photonics
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    • v.35 no.3
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    • pp.95-106
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    • 2024
  • In the 21st century, white light-emitting diodes (LEDs) are widely used as backlighting for liquid crystal displays and as a light source for general illumination. However, white LEDs used in lighting often use a single yellow phosphor on top of a blue LED chip, which lacks the ability to reproduce natural colors in objects under conventional illumination accurately. Recently, researchers have been actively working on realizing high color-rendering lighting by incorporating red quantum dots to improve the spectrum in the long-wavelength band, which is deficient in conventional white LEDs. In particular, how to develop and apply remote quantum dot components to ensure long-term reliability is currently under active research. This paper introduces recent research on remote quantum dot components and the current status of developing high color-rendering lightings with them. Especially, we focus on various factors that are important to consider in optimizing the optical structure of the quantum dot components and discuss the future directions and prospects of research for high color-rendering lighting technology.

Fabrication of Ordered One-Dimensional Silicon Structures and Radial p-n Junction Solar Cell

  • Kim, Jae-Hyun;Baek, Seong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.86-86
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    • 2012
  • The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

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Synthesis and Characterization of Red Electrophosphorescent Polymers Containing Pendant Iridium(III) Complex Moieties

  • Xu, Fei;Mi, Dongbo;Bae, Hong Ryeol;Suh, Min Chul;Yoon, Ung Chan;Hwang, Do-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.9
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    • pp.2609-2615
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    • 2013
  • A series of fluorene-carbazole copolymers containing the pendant phosphor chromophore $Ir(absn)_2(acac)$ (absn: 2-(1-naphthyl)benzothiazole; acac: acetylacetone) were designed and synthesized via Yamamoto coupling. In the film state, these copolymers exhibited absorption and emission peaks at approximately 389 and 426 nm, respectively, which originated from the fluorene backbone. However, in electroluminescent (EL) devices, a significantly red-shifted emission at approximately 611 nm was observed, which was attributed to the pendant iridium(III) complex. Using these copolymers as a single emission layer, polymer light-emitting devices with ITO/PEDOT:PSS/polymer:DNTPD/TmPyPb/LiF/Al configurations exhibited a saturated red emission at 611 nm. The attached iridium(III) complex had a significant effect on the EL performance. A maximum luminous efficiency of 0.85 cd/A, maximum external quantum efficiency of 0.77, maximum power efficiency of 0.48 lm/W, and maximum luminance of 883 $cd/m^2$ were achieved from a device fabricated with the copolymer containing the iridium(III) complex in a 2% molar ratio.

Photoluminescence and long after -glow characteristics of $Sr_{1-x}Eu_xAl_2O_4$phosphor ($Sr_{1-x}Eu_xAl_2O_4$ 형광체의 발광 및 장잔광특성)

  • 이영기;김병규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.493-497
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    • 1998
  • The synthesis of $Sr_{1-x}Eu_xAl_2O_4$ (x=0.005~0.2;mol%) phosphors and its properties of both photoluminescence and long-phosphorescent were investigated as a function of $Eu_2O_3$ composition. The peak wavelengths (520 nm) of phosphorescence spectra were found not to vary with the $Eu_2O_3$ composition (x) of $Sr_{1-x}Eu_xAl_2O_4$ crystals. Single phase of $SrAl_2O_4$ which determined by XRD and PL was obtained with the compositions of x<0.05 mol%. After the removal of light excitation (360 nm), the excellent after-glow characteristics of the phosphorescence were obtained with the $Eu_2O_3$ compositions of x<0.05 mol%, although the after-glow intensities for all phosphors vary exponentially with the times.

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Thermoluminescence and Photostimulated Luminescence of BaFBr:BaFBr:Eu2+ Phosphor (BaFBr:Eu2+ 형광체의 열발광 및 광자극발광 특성)

  • Doh, Sih-Hong;Seo, Hyo-Jin;Kang, Kab-Jung;Kim, Young-Kook;Kim, Do-Sung;Kim, Sung-Hwan;Kim, Chan-Jung;Lee, Byung-Hwa;Kim, Wan;Kang, Hee-Dong
    • Journal of Sensor Science and Technology
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    • v.11 no.5
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    • pp.301-308
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    • 2002
  • BaFBr:$Eu^{2+}$ phosphors were prepared, and the thermoluminescence(TL) and photostimulated luminescence(PSL) of the prepared phosphors were measured. Two glow peaks around 352 and 448 K are observed for x-ray irradiated BaFBr:$Eu^{2+}$ phosphors, and the activation energy of the main glow peak(352 K) was about 0.96 eV. The spectral range of the PSL was $350{\sim}450\;nm$, and the activation energy of the trap giving rise to PSL was about 0.98 eV. The activation energy of the traps giving rise to TL is agreed to those giving rise to PSL within experimental error.

Organic Dispersion Type Back Light EL Display Device as a New Light Source (신광원 유기분산형 백라이트 EL 디스플레이 소자)

  • 임인호;박종주;장관식;정회승;박창엽
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.14 no.1
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    • pp.1-6
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    • 2000
  • In this paper, organic dispersion type back light EL(Electroluminescent) devices were manufactured using Ethyl hydroxy ethyl cellulose as organic binder, ZnS:Cu as phosphor powder and $BaTiO_3$ as dielectrics by screen printing method, which are focused on as a new light source. The properties of the fabricated organic dispersion type back light EL devices were showed $1.98[mA/\m^2]$ of current density, 0.075[W] of power consumption, 7.1[nF] of capacitance at $25[^{\circ}C]$, 100[V], 400[Hz], respectively. Also brightness of the fabricated device was revealed $20~110[cd/\m^2]$ at 50~150[V] and the change of color was shoed bluish green of x=0.1711, y=0.3676 which are color coordinate by CIE.

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Radiopacity of restorative composites by conventional radiograph and digital images with different resolutions

  • Dantas, Raquel Venancio Fernandes;Sarmento, Hugo Ramalho;Duarte, Rosangela Marques;Meireles Monte Raso, Sonia Saeger;de Andrade, Ana Karina Maciel;Dos Anjos-Pontual, Maria Luiza
    • Imaging Science in Dentistry
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    • v.43 no.3
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    • pp.145-151
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    • 2013
  • Purpose: This study was performed to evaluate and compare the radiopacity of dentin, enamel, and 8 restorative composites on conventional radiograph and digital images with different resolutions. Materials and Methods: Specimens were fabricated from 8 materials and human molars were longitudinally sectioned 1.0 mm thick to include both enamel and dentin. The specimens and tooth sections were imaged by conventional radiograph using #4 sized intraoral film and digital images were taken in high speed and high resolution modes using a phosphor storage plate. Densitometric evaluation of the enamel, dentin, restorative materials, a lead sheet, and an aluminum step wedge was performed on the radiographic images. For the evaluation, the Al equivalent (mm) for each material was calculated. The data were analyzed using one-way ANOVA and Tukey's test (p<0.05), considering the material factor and then the radiographic method factor, individually. Results: The high speed mode allowed the highest radiopacity, while the high resolution mode generated the lowest values. Furthermore, the high resolution mode was the most efficient method for radiographic differentiation between restorative composites and dentin. The conventional radiograph was the most effective in enabling differentiation between enamel and composites. The high speed mode was the least effective in enabling radiographic differentiation between the dental tissues and restorative composites. Conclusion: The high speed mode of digital imaging was not effective for differentiation between enamel and composites. This made it less effective than the high resolution mode and conventional radiographs. All of the composites evaluated showed radiopacity values that fit the ISO 4049 recommendations.

The Properties of Beam Intensity Scanner(BInS) in IMRT with Phantom for Three Dimensional Dose Verification

  • Young W. Vahc;Park, Kwangyl;Byung Y. Yi;Park, Kyung R.;Lee, Jong Y.;Ohyun Kwon;Park, Kwangyl;Kim, Keun M.
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2003.09a
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    • pp.64-64
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    • 2003
  • Objectives: Patient dose verification is clinically the most important parts in the treatment delivery of radiation therapy. The three dimensional(3D) reconstruction of dose distribution delivered to target volume helps to verify patient dose and determine the physical characteristics of beams used in intensity modulated radiation therapy(IMRT). We present Beam Intensity Scanner(BInS) system for the pre treatment dosimetric verification of two dimensional photon intensity. The BInS is a radiation detector with a custom made software for relative dose conversion of fluorescence signals from scintillator. Methods: This scintillator is fabricated by phosphor Gadolinium Oxysulphide and is used to produce fluorescence from the irradiation of 6MV photons on a Varian Clinac 21EX. The digitized fluoroscopic signals obtained by digital video camera will be processed by our custom made software to reproduce 3D relative dose distribution. For the intensity modulated beam(IMB), the BInS calculates absorbed dose in absolute beam fluence, which are used for the patient dose distribution. Results: Using BInS, we performed various measurements related to IMRT and found the followings: (1) The 3D dose profiles of the IMBs measured by the BInS demonstrate good agreement with radiographic film, pin type ionization chamber and Monte Carlo simulation. (2) The delivered beam intensity is altered by the mechanical and dosimetric properties of the collimating of dynamic and/or static MLC system. This is mostly due to leaf transmission, leaf penumbra, scattered photons from the round edges of leaves, and geometry of leaf. (3) The delivered dose depends on the operational detail of how to make multileaf opening. Conclusions: These phenomena result in a fluence distribution that can be substantially different from the initial and calculative intensity modulation and therefore, should be taken into account by the treatment planing for accurate dose calculations delivered to the target volume in IMRT.

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Dy co-doping effect on photo-induced current properties of Eu-doped SrAl2O4 phosphor (Eu 도핑 SrAl2O4 형광체의 광 여기 전류 특성에 대한 Dy 코-도핑 효과)

  • Kim, Sei-Ki
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.48-53
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    • 2009
  • $Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.