• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.356-357
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• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.132-136
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• 2009

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.128-133
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• 2007

In this study, we observed the shapes of CNTs formed with the thinckness of catalyst. Catalyst layer was grown by magnetron sputtering method and the thickness of Ni catalyst is the range from 20 to 80 nm. Also, the synthesis of CNT with Ni catalyst thickness was grown by hot-filament PECVD method. And, we investigated the composition of CNTs by using EDS measurement, also observed the shapes of CNTs by using HRTEM and FESEM measurements. In the result, through the TEM analysis, we observed the empty inside of CNTs and the multiwall CNTs, also confirmed the tip of CNT containing Ni. The composition of CNTs are consisted of an element of C, Ti, and Ni. As you shown the growth shapes of CNTs, the pretreatment of the catalyst before te growth of CNTs changed the particle size of the catalysts and grown the CNTs of the different shapes. Consequently, the best vertically alined and well-arranged CNTs exhibited from the substrate deposited at the catalyst thickness of 40 nm.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1320-1322
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• 2005

Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.195-195
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• 2003