• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.350-356
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• 1996

This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using $TiCl_4$ source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(<0.2 at.%). In result, the resistivity for Ti or TiN is less than 200$\mu$$\Omega$cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1013-1019
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• 2007

Amorphous silicon and silicon-nitride films were deposited using plasma-enhanced chemical vapor deposition (PECVD) method at $150^{\circ}C$. As fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon-nitride films approached those of conventional high-temperature films; the refractive index approached 1.9 and the ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds increased. And also, as fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon films approached those of conventional high-temperature films; refractive index and optical band gap approached 4.2 and 1.8 eV, and $[Si-H]/([Si-H]+[Si-H_2])$ increased. Lower RF power and process-pressure made the amorphous silicon films to be better properties. Increase of $H_2$ ratio seemed as the common factor to get reliable amorphous silicon and silicon-nitride films for thin-film-transistors (TFTs) at low temperature.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.235-243
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• 1997

The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.867-869
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• 2008

We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.332-333
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• 2009

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.374-379
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• 2006

In this study, carbon nanotubes (CNTs) were grown on glass substrates coated with Ni/Cr by an atmospheric pressure plasma enhanced chemical vapor deposition(AP-PECVD) and their structural and electrical characteristics were investigated as a possible application to the field emitter of field emission display (FED) devices. The substrate temperature ($400{\sim}500^{\circ}C$) were varied and the grown CNTs were multi wall CNTs (at $500^{\circ}C$, 15 - 20 layers of graphene sheets, distance of each layer : 0.3nm, inner diameter: 10 - 15nm, outer diameter: 30 - 40nm). The ratio of defective carbon peak to graphite carbon peak of the CNTs grown at $500^{\circ}C$ (C measured by fourier transform(FT)-Raman was 0.772 $I_D / I_G$ ratio. When field emission properties were measured, the turn-on field was $2.92V/{\mu}m$ and the emission field at $1mA/cm^2$ was $5.325V /{\mu}m$.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.192-195
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• 2005

The silicon thin film solar cells were fabricated by 13.56 MHz PECVD (Plasma-Enhanced Chemical-Vapor Deposition) and 60 MHz VHF PECVD (Very High-Frequency Plasma-Enhanced Chemical-Vapor Deposition). We focus on textured ZnO:Al films prepared by RF sputtering and post deposition wet chemical etching and studied the surface morphology and optical properties. These films were optimized the light scattering properties of the textured ZnO:Al after wet chemical etching. Finally, the textured ZnO:Al films were successfully applied as substrates for silicon thin films solar cells. The efficiency of tandem solar cells with $0.25 cm^2$ area was $11.8\%$ under $100mW/cm^2$ light intensity. The electrical properties of tandem solar cells were measured with solar simulator (AM 1.5, $100 mW/cm^2)$ and spectral response measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.