• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1367-1374
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• 2008

A new high-gain Fabry-$P{\acute{e}}rot$ cavity antenna for wireless broadband internet(Wibro) base station antennas, which is covered with metamaterial superstrate presenting simultaneous negative values of permittivity and permeability, is proposed. To facilitate the fabrication process using the printed circuit board(PCB) technology of today, a new planar-type metamaterial superstrate is designed, which shows negative and low positive values of a refractive index near the Wibro service frequency band. And the principle of antenna gain enhancement is analyzed from the two different view points of effectively low refractive index and of the Fabry-$P{\acute{e}}rot$ resonance condition. Single square patch antenna is used as a feeder. The separation distance is determined by considering the reflection phases of the metamaterial superstrate and the substrate satisfying Fabry-$P{\acute{e}}rot$ resonance condition, respectively. Comparison between the prediction and the measurement shows good agreement, which verifies the validity of our design approach.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.20-26
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• 2013

In this paper, we propose a multi-band monopole antenna with a band-notching U-slot, which is fabricated inside the flexible polymide film substrate. The U-shaped slot located on the patch-shaped monopole antenna provides band-notch at 2.7 GHz, but also helps to improve return loss at adjacent frequency bands. The performance of the antenna attached on an automobile-glass has been simulated and measured. The fabricated antenna provides more than 10 dB return loss for ISM band(2.4~2.483 GHz) and WAVE band(5.85~5.925 GHz), 2.8~5.7 dBi maximum gain, and good radiation patterns.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.6
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• pp.646-652
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• 2014

This paper presents a design and fabrication of Ku-band power amplifier using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die. In order to fabricate the low-cost Ku-band power amplifier, a Printed Circuit Board(PCB) was used for input/output matching circuits instead of manufacturing process to use an expensive substrate. The measured output power is 42.6 dBm, the drain efficiency is 37.7 % and the linear gain is 7.9 dB under pulse operation at the frequency of 14.8 GHz. Under the continuous wave(CW) test, the output power is 39.8 dBm, the drain efficiency is 24.1 % and the linear gain is 7.2 dB.

• Journal of the Korean Society for Railway
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• v.19 no.4
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• pp.468-479
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• 2016

In order to supply power to online monitoring systems that are attached to high voltage catenary or overhead wires, a wireless power transfer system is required that is able to transmit power over the insulation gap. Such wireless power transfer systems have transmitter and receiver coils that have diameters of over 10cm. This paper focused on an investigation of the sources of loss in the coils when the coils are fabricated using printed circuit board technology. Using finite element simulation results, it has been shown that the dielectric loss in the substrate was the dominant source of the total loss. It has been demonstrated that the selection of a proper dielectric material was the most critical factor in reducing the loss. For further reduction of the loss, the distributed tuning capacitor method and the slotting of the inter-turn spaces have been proposed. For the evaluation of the proposed methods, four coils have been fabricated and their equivalent series resistances and quality factors were measured. Measured quality factors were greater than 300, which means that these devices will be helpful in achieving high coil-to-coil efficiency.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.22 no.6
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• pp.223-229
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• 2023

This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.19-25
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• 2008

In this paper, the front end module (FEM) was proposed for 2.4GHz WLAN band by LTCC multilayer application. The FEM was composed of power amplifier IC, switch IC, and LTCC module. LTCC module consists of output matching circuit and lowpass filter as Tx part, bandpass filter as Rx part. Design of output matching circuit for LTCC was used matching parameter from output matching circuit based on lumped circuit on the PCB board. The dielectric constant of LTCC substrate is 9. The substrate was composed of total 26 layers with each 30um thickness. Ag paste was used for the internal pattern as the conductor material. The size of the module is $4.5mm{\times}3.2mm{\times}1.4mm$. The fabricated FEM showed the gain of 21dB, ACPR of less than -31dBc first side lobe and Less than -59dBc second side lobe and the output power of 23Bm at P1dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.547-551
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• 2010

In this paper, Double rectangular patch with 4-bridges is investigated for solution of IEEE 802.11b/g(2.4GHz) and 802.11a(5.7GHz). Rectangular patch for 5.7GHz frequency band is printed on the PCB substrate and connected to another rectangular patch for 2.4GHz frequency band with 4-bridges to obtain dual band operation in a antenna element. The proposed antenna has a low profile and is fed by $50{\Omega}$ coaxial line. The dielectric constant of the designed antenna substrate is 3.27. Two rectangular patches have each resonance frequencies that are 2.4GHz and 5.7GHz. A dual-band characteristic is shown as connecting two rectangular patch using four bridges. Also, the proposed antenna is shown input return loss that is below -10dB at 2.4GHz and 5.7GHz of WLAN(Wireless LAN).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.170-178
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• 2010

In this paper, we propose the modeling of the power/ground plane which includes complex dielectric permittivity and loss tangent for the power/ground coupled noise. In order to estimate the effects of the dielectric substrate for the coupled noise, we used full-wave simulators, HFSS(High Frequency Structure Simulation) and MWS(MicroWave Studio). The simulated results for the commercial substrates are compared with the measured values. TLM(Transmission Line Method) was used for the calculation of power plane impedance using Debye model which depicts the dielectric loss of PCB. Finally, impedance from proposed circuit model showed very good coincidence to the measured data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.