• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.488-489
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.548-551
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.281-282
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• 2005

The AZO thin film was prepared on flexible substrate by Facing Targets Sputtering method. The substrate used the Polycarbonate(PC), thickness 200$\mu$m. In particular, the AZO thin film was prepared at room temperature because the substrate is weak in heat. The structural, electrical, optical properties of the AZO thin film were investigated and the surface was observed by microscope.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.1
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• pp.110-114
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.85-93
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• 1995

In this study, phthalocyanine thin films were prepared by vacuum sublimation method and investigated sensing characteristics of the films. The phthalocyannies used for the prepaation of the NO$_{x}$ sensors were metal-free Pc(H$_{2}$Pc) and metal Pc(CuPc, CoPc, PbPc). And the substrate temperatures maintained during the fomation of Pc films were varied between R.T. and 200$^{\circ]C$, and the base pressure was 5${\times}10^{6}$ torr. The relationships between NO$_{2}$ sensing properties and SEM analyses as a function of substrate temperatures during the formation of the films were investigated. Among the Pc films, PbPc film showed the best sensing characteristics. Particularlly, the PbPc films prepared at 70$^{\circ]C$ of the substrage temperature showen good sensitivity of 85% to 1ppm NO$_{2}$ gas at operating temperature 190$^{\circ]C$ and response time was about 24 seconds.

• Mycobiology
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• v.43 no.4
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• pp.423-434
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• 2015

The study was conducted to compare the effects of different agro-wastes on the growth, yield, and nutritional composition of oyster mushrooms Pleurotus ostreatus (PO) and Pleurotus cystidiosus (PC). Seven substrate formulas including sawdust (SD), corncob (CC), sugarcane bagasse (SB) alone and in combination of 80 : 20, 50 : 50 ratio between SD and CC, SD and SB were investigated. The results indicated that different substrate formulas gave a significant difference in total colonization period, characteristics of fruiting bodies, yield, biological efficiency (BE), nutritional composition and mineral contents of two oyster mushrooms PO and PC. The results showed that increasing CC and SB reduced C/N ratio, and enhanced some mineral contents (Ca, P, and Mg) of substrate formulas. The increased amount of CC and SB of substrate formulas enhanced protein, ash, mineral contents (Ca, K, Mg, Mn, and Zn) of fruiting bodies of both mushrooms. Substrates with 100% CC and 100% SB were the most suitable substrate formulas for cultivation of oyster mushrooms PO and PC in which they gave the highest values of cap diameter, stipe thickness, mushroom weight, yield, BE, protein, fiber, ash, mineral content (Ca, K, and Mg) and short stipe length. However, substrate formula 100% CC gave the slowest time for the first harvest of both mushrooms PO and PC (46.02 days and 64.24 days, respectively). It is also found that the C/N ratio of substrate formulas has close correlation with total colonization period, mushroom weight, yield, BE and protein content of mushroom PO and PC.