• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.755-757
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• 1998

The thermally stimulated current (TSC) of PVDF thin film prepared by physical vapor deposition method was investigated. PVDF shows three TSC peaks designated $P_1$, $P_2$ and $P_3$ in ascending order of temperature. The $P_1$ peak is associated with water in the PVDF specimen. $P_2$ and $P_3$ Peaks are specific peaks of $\alpha$ and $\beta$ type PVDF, respectively. The peak temperature was shifted to higher temperature, and peak intensity was decreased with increasing substrate temperature under thin film preparation.

• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.269-273
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• 2001

W fabricated thin film using Na$_{0.5}$K$_{0.5}$NbO$_3$ volatile material by pulsed laser deposition (PLD) and studied characterization from EM, XRD, P-E. The density and scale of droplet, which is the defect of PLD, was investigated by SEM but large droplet was not found. The degree of assemble oriented C-axis measured with X-ray diffraction suggests that this film oriented C-axis achieved by $\theta$-2$\theta$ scan and rocking curves shows good self-assemble phenomenon, finally $\phi$-scan does that all of the four directions of the lattice in film equals to those of substrate. P-E hysteresis loop shows residual remnant polarization or saturation polarization value, but it is applicable to memories.ies.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• 한국잡초학회지
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• 제7권1호
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• pp.52-57
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• 1987

To know the effects of weeding periods (weeding from 12 days, 28 days and 42 days after seeding to harvest, and weeding from seeding to 14 days, 28 days and 42 days after seeding) and growing conditions such as transparent polyethylene film mulch (P.E. mulch) and bare soil on growth and yield of peanuts, "Yeongho-Tangkong" was planted on May 10, 1984. Under P.E. mulch, the number of weeds was higher, but the weed dry weight was lower than in bare soil by the middle of July. Sixty days after seedings, the length of main stems in weedy check plots was longer, but shoot dry weight was lower compared to weed free plot. In the correlation coefficients between weed dry weight and the shoot dry weight of peanut on July 14, the growth retardation of peanuts due to weeds was showed earlier under P.E. mulch than in bare soil. Shoot dry weight, shelling ratio, number of seeds per pod, 100 pod weight, and seed yield were higher under P.E, mulch compared to bare soil. But weed dry weight, length of branches, number of pod bearing branches, number of pods per square meters, and pod yield were similar between P.E. mulch and bare soil. Shoot dry weight of peanuts, length of branches, number of pod bearing branches, number of pods per square meters, pod yield, 100 pod weight, 100 seed weight, and seed yield in weed free plots from 28 days after seeding to harvest (28 DAS-Harvest) were higher compared to weed free plots from 42 DAS-Harvest. However, in the weed free plot from seeding to 42 days after seeding seed yield was lower than that of the continuous weeding plot due to lower number of pod bearing branches and number of pods per square meters. When weed was not controlled at the later growth stages of peanuts, reduction in seed yield due to weeds was greater in bare soil than that under P.E. mulch.

• 한국작물학회지
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• 제32권1호
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• pp.112-118
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• 1987

경기지역에서의 P.E 피복에 의한 하대두의 조파가능성과 P.E 피복효과를 검토코자 경기ㆍ농촌진흥원에서 혼집선발한 경기 11004를 공시하여 4월 1 일부터 10일 간격으로 4월 30일까지 파종하여 시험한 결과는 다음과 같다. 1. 지중온도는 6월 상순까지 P.E 피복에서 1 ~5$^{\circ}C$ 높았으나 6월 중순 이후는 무피복과 큰 차이가 없었다. 2. P.E 피복은 무피복에 비해 토양수분함양이 높았고 토양경도는 낮았다. 3. P.E 피복에 의해 출현기는 5~l6일, 개화기는3~5 일 빨라졌다. 4. 개화기의 건물중, 엽면적지수는 P.E 피복에서 증가되었고 근중 및 근류균은 감소하였다. 5. 개화기 식물체분석 결과 P.E 피복에서 N, P, K의 흡수율이 높았다. 6. 풋콩수량은 무피복 4월 20일 파종(1,389kg/10a)에 비해 P.E 피복 4월 10일, 4월 20일 파종이 각각 12% 증수되었고 소득은 무피복 4월 20일 파종(250천원/10a)에 비해 P.E 피복 4월 1 일, 4월 10 일, 4월 20일 파종에서 각각 70, 83, 20% 높았다. 7. P.E 피복, 무피복 모두 경기지역에서 4월 1일 파종이 가능하였으나 무피복의 경우 년차간 출현율의 차이가 심하여 안전재배를 위해서는 P.E 피복재배가 요망된다.

• 한국환경농학회지
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• 제7권1호
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• pp.14-20
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• 1988

폴리에틸렌필름(P.E)멀칭이 제초제(除草劑) alachlor, pendimethalin, diphenamid의 토양(土壤) 및 수확물중(收穫物中)의 잔류성(殘留性)에 미치는 영향(影響)에 대(對)하여 고추, 땅콩, 참깨포장(圃場)에서 로지조건(露地條件)을 대조(對照)로 하여 조사(調査)하였다. 토양중(土壤中)에 있어서 3종제초제(種除草劑)의 로지조건(露地條件)에서의 반감기(半減期)는 alachlor의 경우 땅콩과 참깨포장(圃場)에서 $3{\sim}4$ 일(日), pendimethalin은 고추포장(圃場)에서 30일(日), diphenamid는 고추, 땅콩, 참깨포장(圃場)에서 $24{\sim}46$ 일정도(日程度)였다. 분해(分解)가 빨랐던 alachlor의 반감기(半減期)는 로지조건(露地條件)과 P.E.피복조건(被覆條件)에서 거의 차(差)가 없었다. 분해(分解)가 느렸던 pendimethalin과 diphenamid는 로지조건(露地條件)에서보다 P.E.피복조건(被覆條件)에서 각각(各各) 30일(日)과 $20{\sim}90$ 일간(日間) 더 길었다. P.E.피복(被覆)의 유무(有無)에 관계(關係)없이 pendimethalin은 최종적(最終的)으로 수확(收穫)된 고추에서 검출(檢出)되지 않았으며 alachlor도 땅콩과 참깨에서 검출(檢出)되지 않았다. diphenamid의 땅콩중(中) 잔류량(殘留量)은 0.147ppm(투명(透明) P.E. 피복조건(被覆條件))${\sim}0.071ppm$(로지조건(露地條件))이었고, 참깨중(中) 잔류량(殘留量)은 0.022ppm(투명(透明) P.E. 피복조건(被覆條件))${\sim}0.129ppm$(로지조건(露地條件))이었는 바, 이는 양조건(兩條件)에서 잔류허용량(殘留許容量)(0.2ppm) 이하(以下)였다.

• 한국식품과학회지
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• 제10권1호
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• pp.73-77
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• 1978

청도반시와 사곡시 두 품종(品種)을 polyethylene film의 두께와 포장(包裝) bag내(內)의 과실개체수(果實個體數)에 따라 구분저장(區分貯藏)하였을 저장시일(貯藏時日)의 경과(經過)에 따른 성분변화(成分變化)를 조사(調査)한 결과(結果)는 다음과 같다. 1. 중량감소(重量減少)에 있어서, 청도반시는 50개(個) 포장(包裝)의 0.04mm구(區)가, 사곡시는 10개포장(個包裝)의 0.08mm구(區)와 50개포장(個包裝)의 0.04mm구(區)가 가장 감소(減少)가 적었다. 2. 경도(硬度)의 변화(變化)에 있어서 청도반시, 사곡시 모두 50개포장(個包裝)의 0.04mm구(區)가 가장 감소(減少)가 적었다. 3. 유리산(遊離酸)의 감소(減少)에서 청도반시는 50개포장(個包裝)의 0.04mm구(區)가, 사곡시는 10개포장(個包裝)의 0.06mm구(區) 및 50개포장(個包裝)의 0.04mm구(區)가 감소율(減少率)이 낮았다. 4. 당도(糖度)의 변화(變化)에서, 10개포장(個包裝)의 0.06mm구(區) 및 0.08mm구(區)와 50개포장(個包裝)의 0.04mm구(區)가 감소(減少)가 적었다. 사곡시는 10개포장(個包裝) 및 50개포장(個包裝)의 0.04mm구(區)가 가장 감소(減少)가 적었다. 5. 가용성(可溶性) tannin의 함량변화(含量變化)에 있어서 청도반시와 사곡시 두 품종(品種) 모두 3개(個) 포장(包裝)과 10개포장(個包裝)의 0.04mm구(區)가 타구(他區)에 비(比)해 잔존량(殘存量)이 많았다. 한편 두 품종(品種) 공(共)히 50개포장(個包裝)의 전구(全區)가 저장말기(貯藏末期)에 tannin함량(含量)이 적어서 삽미(澁味)가 거의 느껴지지 않았다. 이상의 결과(結果)를 종합(綜合) 할 때 청도반시와 사곡시의 P.E film저장(貯藏)의 최적조건(最適條件)은 두 품종(品種) 모두 0.04mm film bag에 50개(個) 포장(包裝)하는 것임을 알수 있었다.

• Corrosion Science and Technology
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• 제5권4호
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• pp.141-148
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• 2006

The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.105-109
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• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.415-415
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• 2013

We have investigated the optical and electrical properties of the CIGS thin film solar cells by the electroreflectance (ER), photoreflectance (PR), photoluminescence (PL), and photocurrent (PC) spectroscopies at room temperature. The ER spectrum had two narrow signal regions and one broad signal region. We measured PL and PC to confirm the signals at low energy region (1.02~1.35 eV), so these signals are related to the CIGS thin film, and the high energy region (2.10~2.52 eV) is related to the CdS bandgap energy. The broad signal region (1.35~2.09 eV) is due to the internal electric field by the p-n junction from the comparison between PR and ER spectra, and we calculated the internal electric field by the p-n junction. In the high efficiency solar cell, the CdS signal of ER spectrum is narrower than the lower efficiency solar cells.