• Title/Summary/Keyword: P.E film

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A Study on the Fabrication $Na_0.5$$K_0.5$$NbO_3$ Volatile Material Thin Film by Pulsed Laser Deposition and he Confirmation of C-axis Orientation by X-ray Diffraction (PLD 기법에 의한 $Na_0.5$$K_0.5$$NbO_3$ 휘발성 물질의 박막 제작 및 XRD에 의한 c축 배향성 확인에 관한 연구)

  • 최원석;김장용;장철순;문병무
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.4
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    • pp.269-273
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    • 2001
  • W fabricated thin film using Na$_{0.5}$K$_{0.5}$NbO$_3$ volatile material by pulsed laser deposition (PLD) and studied characterization from EM, XRD, P-E. The density and scale of droplet, which is the defect of PLD, was investigated by SEM but large droplet was not found. The degree of assemble oriented C-axis measured with X-ray diffraction suggests that this film oriented C-axis achieved by $\theta$-2$\theta$ scan and rocking curves shows good self-assemble phenomenon, finally $\phi$-scan does that all of the four directions of the lattice in film equals to those of substrate. P-E hysteresis loop shows residual remnant polarization or saturation polarization value, but it is applicable to memories.ies.

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Growth and Yield of Peanuts Affected by Weeding Time and Periods in Bare Soil and Under the P. E. film Mulch (노지(露地) 및 P. E. film 피복하(被覆下)에서 제초시기(除草時期)와 기간(期間)이 땅콩의 생육(生育) 및 수량(收量)에 미치는 영향(影響))

  • Kang, K.H.;Lee, S.S.;Lee, K.H.;Hwang, H.B.;Lee, S.B.;Ye, B.D.
    • Korean Journal of Weed Science
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    • v.7 no.1
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    • pp.52-57
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    • 1987
  • To know the effects of weeding periods (weeding from 12 days, 28 days and 42 days after seeding to harvest, and weeding from seeding to 14 days, 28 days and 42 days after seeding) and growing conditions such as transparent polyethylene film mulch (P.E. mulch) and bare soil on growth and yield of peanuts, "Yeongho-Tangkong" was planted on May 10, 1984. Under P.E. mulch, the number of weeds was higher, but the weed dry weight was lower than in bare soil by the middle of July. Sixty days after seedings, the length of main stems in weedy check plots was longer, but shoot dry weight was lower compared to weed free plot. In the correlation coefficients between weed dry weight and the shoot dry weight of peanut on July 14, the growth retardation of peanuts due to weeds was showed earlier under P.E. mulch than in bare soil. Shoot dry weight, shelling ratio, number of seeds per pod, 100 pod weight, and seed yield were higher under P.E, mulch compared to bare soil. But weed dry weight, length of branches, number of pod bearing branches, number of pods per square meters, and pod yield were similar between P.E. mulch and bare soil. Shoot dry weight of peanuts, length of branches, number of pod bearing branches, number of pods per square meters, pod yield, 100 pod weight, 100 seed weight, and seed yield in weed free plots from 28 days after seeding to harvest (28 DAS-Harvest) were higher compared to weed free plots from 42 DAS-Harvest. However, in the weed free plot from seeding to 42 days after seeding seed yield was lower than that of the continuous weeding plot due to lower number of pod bearing branches and number of pods per square meters. When weed was not controlled at the later growth stages of peanuts, reduction in seed yield due to weeds was greater in bare soil than that under P.E. mulch.

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On the Characteristics of Oxide Film on Gap (GaP 산화막 특성에 관하여)

  • Park, J.W.;Moon, D.C.;Kim, S.T.
    • Proceedings of the KIEE Conference
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    • 1988.11a
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    • pp.193-195
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    • 1988
  • The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

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Effects of Early Planting and Polyethylene Mulch on Soil for Early Maturing Soybean in Kyeonggi Area (경기지역에서 대두콩에 대한 피복재배효과)

  • Song, Su-Hyeun;Kim, Sung-Ki;Park, Kyeong-Yeol;Kim, Byeong-Hyeon;Ree, Dong-Woo
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.32 no.1
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    • pp.112-118
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    • 1987
  • This study was carried out to investigate the effects of early planting and polyethylene film (P.E) mulch on early maturing soybean of Korean native cultivar Kyeonggi No. 114 in the Kyeonggi area. It was planted four times at the ten days interval from April I to April 30 in 1985 and 1986. The average soil temperature was 1-5$^{\circ}C$ higher under the polyethylene film mulch condition than the conventional cultural practice condition. Soil moisture content also was higher under P.E mulch condition. Days to emergence was shortened 5-16 days and days to flowering was shortened 3-5 days. The fresh pod yield was increased 12% more at the planting date of April 1 and April 10. Income was increased 70, 83, more at the planting date of April 1 and April 10 under the polyethylene mm mulch conditions.

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Studies on Persistence of Pesticides in Soils and Crops under Polyethylene Film Mulching Culture;IV. Persistence of Herbicides Alachlor, Pendimethalin and Diphenamid (폴리에틸렌 멀칭재배시(栽培時) 농약(農藥)의 토양(土壤) 및 작물체중(作物體中) 잔류(殘留)에 관한 연구(硏究);제(第)4보(報) 제초제(除草劑) Alachlor, Pendimethalin, Diphenamid의 잔류성(殘留性))

  • Ryang, Hwan-Seung;Moon, Young-Hee;Kim, Nak-Eung
    • Korean Journal of Environmental Agriculture
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    • v.7 no.1
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    • pp.14-20
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    • 1988
  • The effect of polyethylene film(P.E.) mulching on the degradation of alachlor(N-methoxymethyl-2, 6-diethyl ${\alpha}-chloroacetoanilide$), pendimethalin(3, 4-dimethyl-2, 6-dinitro-N-l-ethylpropylanilide) and diphenamid(N,N-dimethyl-2, 2-diphenylacetamide) in red pepper, peanut, and sesame fields was investigated. In soils under the non-mulching condition the half-lives of alachlor, pendimethalin and diphenamid were 3, 37 and $24{\sim}46$ days, respectively. However, the half-lives of those under the P.E. mulching condition were longer than under the non-mulching condition. The differences in the half-lives between P.E. mulching and non-mulching conditions were about 30 days for pendimethalin and from 20 to 90 days for diphenamid. However, the half-life of alachlor was hardly affected by P.E. mulching. Pendimethalin and alachlor were not detected in the harvasted red peppers, peanuts and sesame under P.E. mulching and non-mulching conditions. But, the residue of diphenamid in peanuts was 0. 147 ppm under the P.E. mulching condition and 0.071 ppm under the non-mulching condition, and the residue of diphenamid in sesame was 0.022 ppm under the P.E. mulching condition and 0.129 ppm under the non-mulching condition. The amounts, however, were below the tolerance limits for pesticide residue.

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Studies on the Utilization of Persimmons -(Part 5) Investigation of the Optimum Thickness of Film Bag for Poly Ethylene Film Storage of Astringent Variety- (감의 이용(利用)에 관(關)한 연구(硏究) -(제5보(第五報)) 삽시의 Polyethylene Film 저장(貯藏)에 따른 최적(最適) Film 두께의 조사(調査)-)

  • Sohn, T.H.;Choi, C.J.;Cho, R.K.;Seog, H.M.;Seong, C.H.;Seo, O.S.;Ha, Y.S.;Kang, J.H.
    • Korean Journal of Food Science and Technology
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    • v.10 no.1
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    • pp.73-77
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    • 1978
  • This experiment was made to select the optimum thickness of the polyethylene (P.E) film for Cheongdo Bansi and Sagoksi in the P.E film storage kept at $0^{\circ}C$. The experimental plots were divided into 4 plots by film thickness (0.04, 0.06, 0.08 and 0.10mm) and those were subdivided into 3 plots by fruits number (3, 10 and 50 persimmons) in each film bags. We investigated five experimental items; the change of loss of weight, firmness, titratable acidity, sugar contents and soluble tannin contents. 1. In the changes of loss of weight, the plot of packing in 0.04mm P.E. film bag with 50 persimmons were more retarded than other plots in Cheongdo Bansi, and packing in 0.08mm with 10 persimmons, 0.04 mm with 50 persimmons were more retarded than other plots in Sagoksi. 2. In the change of softening, the plot of packing in 0.04 mm with 50 persimmons were more retarded than other plots in Cheongdo Bansi and Sagkai. 3. In the changes of titratable acidity, the plot of packing in 0.04 mm with 50 persimmons were more slightly decreased than other plots in Cheongdo Bansu also in Sagoksi, packing in 0.06 mm with 10 persimmons were the same results. 4. In the changes of soluble tannin contents, the plots of packing in 0.06 mm with 10 persimmons, 0.04 mm with 50 perimmons were more ratarded in Chenongdo Bansi, also in Sagoksi, packing in 0.04 mm with 10 persimmons 50 persimmons were the same results. 5. In the changes of soluble tannin contents, the plots of packing in 0.04mm with 3 and 10 persimmons were more slowly decreased than other plots in Cheongdo Bansi and Sagoksi, on. the other hand, pcaking in 0.04mm with 50 persimmins in Cheongdo Bansi and Sagoksi, had not astringent taste at 120 days in storage. Judging through the upper results, the most desirable storage conditions for Cheongdo Bansi and Sagoksi were to pack in P.E film bag of 0.04mm with 50 persimmons.

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Effects of Film Formation Conditions on the Chemical Composition and the Semiconducting Properties of the Passive Film on Alloy 690

  • Jang, HeeJin;Kwon, HyukSang
    • Corrosion Science and Technology
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    • v.5 no.4
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    • pp.141-148
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    • 2006
  • The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

The Fabrication and Characteristics of ITO Thin Films and ITO/p-InP Solar Cells (ITO박막과 ITO/p-InP 태양전지의 제작 및 특성)

  • 맹경호;문동찬;송복식;김선태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.105-109
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    • 1992
  • ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

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Electroreflectance Study of CIGS Thin Film Solar Cells

  • Jo, Hyun-Jun;Jeon, Dong-Hwan;Ko, Byoung Soo;Sung, Shi-Joon;Bae, In-Ho;Kim, Dae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.415-415
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    • 2013
  • We have investigated the optical and electrical properties of the CIGS thin film solar cells by the electroreflectance (ER), photoreflectance (PR), photoluminescence (PL), and photocurrent (PC) spectroscopies at room temperature. The ER spectrum had two narrow signal regions and one broad signal region. We measured PL and PC to confirm the signals at low energy region (1.02~1.35 eV), so these signals are related to the CIGS thin film, and the high energy region (2.10~2.52 eV) is related to the CdS bandgap energy. The broad signal region (1.35~2.09 eV) is due to the internal electric field by the p-n junction from the comparison between PR and ER spectra, and we calculated the internal electric field by the p-n junction. In the high efficiency solar cell, the CdS signal of ER spectrum is narrower than the lower efficiency solar cells.

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Study on Indium-free and Indium-reduced thin film solar absorber materials for photovoltaic application

  • Wibowo, Rachmat Adhi;Kim, Gyu-Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.270-273
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    • 2007
  • In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.

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