• The Korean Journal of Mycology
• /
• v.27 no.1 s.88
• /
• pp.44-53
• /
• 1999

This paper is the fifth contribution towards taxonomic studies on Cercospora and allied genera, and contains ten species of Korean cercosporoid fungi; viz., Cercospora adusta, C. chrysanthemi, C. ludwigiana, C. zebrina, Passalora depressa, Pseudocercospora destructiva, P. lonicericola, P. nojimai, Pseudocercosporella inconspicua, and Ramularia major. Morphological characteristics of taxonomic value are described and illustrated for these species to contribute towards a mycological monograph of Korean cercosporoid fungi.

• Proceedings of the KIEE Conference
• /
• 1988.11a
• /
• pp.193-195
• /
• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.06a
• /
• pp.190-193
• /
• 1991

The monolithically integrated receiver OEIC using InGaAs/InP PIN PD, junction FET's and bias resistor has been fabricated on semi-insulating InP substrate. The fabrication process is highly compatible between PD and self-aligned JFET, and reduction in gate length is achieved using an anisotropic selective etching and a non-planar OMVPE process. The PIN photodetector with a 80 ${\mu}{\textrm}{m}$ diameter exhibits current of less than 5 nA and a capacitance of about 0.35 pF at -5 V bias voltage. An extrinsic transconductance and a gate-source capacitance of the JFET with 4 ${\mu}{\textrm}{m}$ gate length (gate width = 150 ${\mu}{\textrm}{m}$) are typically 45 mS/mm and 0.67 pF at 0 V, respectively. A voltage gain of the pre-amplifier is 5.5.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.12S
• /
• pp.1268-1272
• /
• 2003

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.1
• /
• pp.10-15
• /
• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• KSBB Journal
• /
• v.19 no.5
• /
• pp.358-362
• /
• 2004

Characteristics of cell growth and poly(3-hydroxybutyrate-co-4-hydroxybutyrate) [P(3HB-co-4HB)] synthesis was investigated through flask and batch cultures of Alcaligenes latus and Comamonas acidovorans. The specific growth rate of C. acidovorans increased with yeast extract concentration and decreased with 1,4-butanediol concentration. Optimum glucose concentration for growth of C. acidovorans was 20 g/L. In one-step flask cultures of C. acidovorans, final dry cell weight and PHA content decreased with the ratio of 1,4-butanediol to glucose, while the 4HB fraction in copolymers gradually increased to 100 $mol\%$ with an initial 1,4-butanediol concentration of 20 g/L as single carbon source. The specific growth rate of A. latus decreased with v-butyrolactone concentration and optimum sucrose concentration for growth was 10 g/L. In batch cultures of A. latus, 4HB fraction increased with initial v-butyrolactone concentration. P(3HB-co-4HB) with 19 $mol\%$ 4HB was obtained when the initial ratio of v-butyloractone (g/L) to sucrose (g/L) was 10 : 10.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.176-176
• /
• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.504-507
• /
• 2002

We investigated electro-optic and ionic properties of twisted nematic cells by using control of chiral pitch. These properties are observed in practical experiment and simulations. C-V and V-T curve characteristics were obtained from three types of cells with d/p. It is shown that d/p ratio of short cells exhibit faster response time improved by 20% than normal cell. Also, inter-gray response time is improved each rise time and decay time. And, the increase of saturation voltage is happened because of the small twist angel change from initial state at high voltage near 5V. To compensate for longer black level tail, gamma curve index was varied from g = 2.2 to g = 2.7 in module status. Additionally, adding chiral dopant into TN cells improved ionic characteristics such as increasing VHR, Ion density and DC Hysteresis were decreased..

• Journal of Environmental Science International
• /
• v.27 no.3
• /
• pp.167-177
• /
• 2018

The removal characteristics of As and Se ions from aqueous solution by hexadecyl trimethyl ammonium bromide (HTMAB) modified anthracite (HTMAB-AT) were investigated under various conditions of contact time, pH and temperature. When the pH is 6, the zeta potential value of anthracite (AT) is -24 mV and on the other hand, the zeta potential value of the HTMAB-AT is +44 mV. It can be seen that the overall increase of about 60 mV. Increasing the (+) potential value indicates that the surface of the adsorbent had a stronger positive charge, so adsorption for the anion metal was increased. The isotherm data was well described by Langmuir and Temkin isotherm model. The maximum adsorption capacity was found to be 7.81 and 6.89 mg/g for As and Se ions from the Langmuir isotherm model at 298 K, respectively. The kinetic data was tested using pseudo first and pseudo second order models. The results indicated that adsorption fitted well with the pseudo second order kinetic model. The mechanism of the adsorption process showed that adsorption was dependent on intra particle diffusion model according to two step diffusion. The thermodynamic parameters(${\Delta}G^{\circ}$, ${\Delta}H^{\circ}$, and ${\Delta}S^{\circ}$) were also determined using the equilibrium constant value obtained at different temperatures. The thermodynamic parameters indicated that the adsorption process was physisorption, and also an endothermic and spontaneous process.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.360-366
• /
• 2000

$Sr_xBi_{2.4}Ta_2O_9$ (SBT) thin films of 150 nm thickness were prepared using LSMCD (Liquid Source Misted Chemical Deposition) process with variation of the Sr/Ta mole ratio of 0.35~0.65, and their crystalline phase, microstructure, ferroelectric properties and leakage current characteristics were investigated. Ferroelectric characteristics of the LSMCD-derived SBT films were optimized at the Sr/Ta moleratio of 0.425. The remanent polarization (2Pr) and coercive field (Ec) of the SBT film with the Sr/Ta mole ratio of 0.425 were measured as 15.01 $\mu$C/$ \textrm{cm}^2$ and 41 kV/cm at an applied voltage of $\pm$5 V respectively. LSMCD-derived SBT films with the Sr/Ta mole ratio of 0.35~0.5 exhibited leakage current densities lower than $10^{-5} A/\textrm{cm}^2$ at an applied field of 100 kV/cm, and excellent fatigue-free characteristics of the remanent polarization decrement less than 1% after $10^{10}$ switching cycles at$\pm$5 V.