• Journal of the Korean Institute of Telematics and Electronics
• /
• v.20 no.1
• /
• pp.45-49
• /
• 1983

The four-layered(metal/insulator/n epi-layer/p+) controlled inversion devices have been fabricated. The I-V curve showed two characteristic states―an On state and an OFF state which were separated by a negative resistance region. The switching voltage and the holding voltage were about 5.0V and 2.5V, respectively. The switching voltage of the device was decreased by photo illumination while the holding voltage remained unaffected.

• The Journal of Engineering Geology
• /
• v.18 no.4
• /
• pp.371-379
• /
• 2008

In this study, seismic elastic wave and dynamic elastic modulus properties are investigated by down-hole seismic tests that were applied to the 11 gneiss area. The research results show that the realtionship between the two properties are $V_s=0.5589{\times}V_p$ in gneiss. The relationship between the two properties are separated into two groups. Group 1 is influenced mainly by the specific gravity of rock, but group 2 is influenced mainly by the joint aperture. As weathering progresses, group 1 clearly shows a decreasing tendency. In fresh and slightly weathered rock-mass, correlations between $V_p$ and dynamic elastic modulus is expressed in linear line but in moderately-highly weathered rock-mass, correlations between $V_p$ and dynamic elastic modulus is expressed curve as a quadratic function. Correlations between $V_s$ and dynamic elastic modulus are analyzed similar with a $V_p$ case.

• Radiation Oncology Journal
• /
• v.36 no.1
• /
• pp.63-70
• /
• 2018

Purpose: The objective of this study was to compare dosimetric characteristics of three-dimensional conformal radiotherapy (3D-CRT) and two types of intensity-modulated radiotherapy (IMRT) which are step-and-shoot intensity modulated radiotherapy (s-IMRT) and modulated arc therapy (mARC) for thoracic esophageal cancer and analyze whether IMRT could reduce organ-at-risk (OAR) dose. Materials and Methods: We performed 3D-CRT, s-IMRT, and mARC planning for ten patients with thoracic esophageal cancer. The dose-volume histogram for each plan was extracted and the mean dose and clinically significant parameters were analyzed. Results: Analysis of target coverage showed that the conformity index (CI) and conformation number (CN) in mARC were superior to the other two plans (CI, p = 0.050; CN, p = 0.042). For the comparison of OAR, lung V5 was lowest in s-IMRT, followed by 3D-CRT, and mARC (p = 0.033). s-IMRT and mARC had lower values than 3D-CRT for heart $V_{30}$ (p = 0.039), $V_{40}$ (p = 0.040), and $V_{50}$ (p = 0.032). Conclusion: Effective conservation of the lung and heart in thoracic esophageal cancer could be expected when using s-IMRT. The mARC was lower in lung $V_{10}$, $V_{20}$, and $V_{30}$ than in 3D-CRT, but could not be proven superior in lung $V_5$. In conclusion, low-dose exposure to the lung and heart were expected to be lower in s-IMRT, reducing complications such as radiation pneumonitis or heart-related toxicities.

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.249-254
• /
• 1997

We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.1-7
• /
• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.243-248
• /
• 2015

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• The Journal of Advanced Prosthodontics
• /
• v.6 no.6
• /
• pp.512-520
• /
• 2014

PURPOSE. The purpose of this study was to assess the surface characteristics and the biocompatibility of zirconium (Zr) coating on Ti-6Al-4V alloy surface by radio frequency (RF) magnetron sputtering method. MATERIALS AND METHODS. The zirconium films were developed on Ti-6Al-4V discs using RF magnetron sputtering method. Surface profile, surface composition, surface roughness and surface energy were evaluated. Electrochemical test was performed to evaluate the corrosion behavior. Cell proliferation, alkaline phosphatase (ALP) activity and gene expression of mineralized matrix markers were measured. RESULTS. SEM and EDS analysis showed that zirconium deposition was performed successfully on Ti-6Al-4V alloy substrate. Ti-6Al-4V group and Zr-coating group showed no significant difference in surface roughness (P>.05). Surface energy was significantly higher in Zr-coating group than in Ti-6Al-4V group (P<.05). No difference in cell morphology was observed between Ti-6Al-4V group and Zr-coating group. Cell proliferation was higher in Zr-coating group than Ti-6Al-4V group at 1, 3 and 5 days (P<.05). Zr-coating group showed higher ALP activity level than Ti-6Al-4V group (P<.05). The mRNA expressions of bone sialoprotein (BSP) and osteocalcin (OCN) on Zr-coating group increased approximately 1.2-fold and 2.1-fold respectively, compared to that of Ti-6Al-4V group. CONCLUSION. These results suggest that zirconium coating on Ti-6Al-4V alloy could enhance the early osteoblast responses. This property could make non-toxic metal coatings on Ti-6Al-4V alloy suitable for orthopedic and dental implants.

• Journal of IKEEE
• /
• v.11 no.4
• /
• pp.158-164
• /
• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.