• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1551_1552
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• 2009

In this paper, we presented the packaging technologies of CMOS ISFET(Ion Sensitive Field Effect Transistor) pH sensor using post-CMOS process and MCP(Multi Chip Packaging). We have proposed and developed two types of packaging technology. one is one chip, which sensing layer is deposited on the gate metal of standard CMOS ISFET, the other is two chip type, which sensing layer is separated from CMOS ISFET and connected by bonding wire. These proposed packaging technologies would make it easy to fabricate CMOS ISFET pH sensor and to make variety types of pH sensor.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.405-406
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• 2006

Raw materials from different sources, produced by a given process and having equal chemical composition, are supposed to be equivalent. The differences in sintering behavior have been investigated on P/M steels obtained from four diffusion-bonded powders (Fe + Ni + Cu + Mo) on atomized iron base, at the same alloy contents. Two levels of carbon and two sintering conditions have been investigated. Dimensional changes, C content, hardness, microhardness pattern, universal hardness, fractal analysis, pore features, microstructure features, and rupture strength have been compared to characterize different raw materials. The results show that the claimed equivalence is not confirmed by experimental data.

• Proceedings of the KACD Conference
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• 2003.11a
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• pp.605-605
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• 2003

Novel silane coupling agents containing hydrophobic phenyl group 3-(3-methoxy-4-methacryloyloxyphenyl) propyl-trimethoxysilane(p-MPS), -triisocyanatesilane (p-MBI), -trichlorosilane (p-MBC) were synthesized. The bonding durability of these silanes against water immersion and thermal stress was investigated. 3-methacryloyloxypropyltrimethoxysilane (3-MPG) was used as a control. The glass modified with those silanes at a concentration of 2wt％ were kept for 3 minutes at $120^{\circ}C$, and then were bonded to the heaped metal with self-cured resin composite.(omitted)

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.30-36
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• 1998

The plasma-spray technique is currently the most frequently used method to produce calcium phosphate coatings. Hydroxyapatite(HAp), one form of calcium phosphate, is preferred by its ability to form a direct bond with living bone, resulting in improvements of implant fixation and faster bone healing. Recently, concerns have been raised regarding the viable use and long-term stability of plasma-spray HAp coatings due to its nature of comparatively thick, porous, and poor bonding strength to metal implants. Thin layers (maximum of few microns) of calcium phosphate were formed by an e-beam evaporation with and without ion bombardments. The Ca/P ration of film was controlled by either using the evaporants having the different ration of Ca/P with addition of CaO, or adjusting the ion beam assist current. The Ca/P ration had great effects on the structure formation after heat treatment and the dissolution bahavior. The calcium phosphate films produced by IBAD exhibited high adhesion strength.

• International Journal of Advanced Culture Technology
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• v.11 no.2
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• pp.323-329
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• 2023

In this study, Proline pentamer model was used to investigate change in the dihedral angle, intramolecular hydrogen bonding and formation energies during structural optimization. L-Proline (LP, as an imino acid residue) pentamers having four conformation types [β: φ/ψ=t−/t+, α: φ/ψ=g−/g−, PP_II: φ/ψ=g−/t+ and Plike: φ/ψ= g−/g+] were carried out by QCC [B3LYP/6-31G(d,p)]. The optimized structure and formation energy were examined for designated structure. In LP, P-like and PP_II types did not change by optimization, and β types were transformed into PP_II having no H-bond independently of the designated ψ values. PP_II was more stable than P-like by about 2.2 kcal/mol/mu. The hydrogen bond distances of d2(4-6) type H-bonds were 1.94 - 2.00Å. In order to understand the processes of the transformations, the changes of φ/ψ, distances of NH-OC (d_NH/CO) and formation energies (ΔE, kcal/mol/mu) were examined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.65-68
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• 2013

A novel bumping process using solder bump maker (SBM) is developed for fine-pitch flip chip bonding. It features maskless screen printing process. A selective solder bumping mechanism without the mask is based on the material design of SBM. Maskless screen printing process can implement easily a fine-pitch, low-cost, and lead-free solder-on-pad (SoP) technology. Its another advantage is ternary or quaternary lead-free SoP can be formed easily. The process includes two main steps: one is the thermally activated aggregation of solder powder on the metal pads on a substrate and the other is the reflow of the deposited powder on the pads. Only a small quantity of solder powder adjacent to the pads can join the first step, so a quite uniform SoP array on the substrate can be easily obtained regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 ${\mu}m$ is, successfully, formed.

• KSBB Journal
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• v.19 no.1
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• pp.33-37
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• 2004

Succinic acid is of interested as the raw material of biodegradable polymer. In this study, succinic acid was separated by reactive extraction using amine extractants such as TOA (trioctylamine) and Aliquat 336. The extractability of TOA for succinic acid was higher than that of Aliquat 336. The distribution of succinic acid into organic phase was decreased with increasing pH in aqueous phase. However, the effect of pH on the extractability of Aliquat 336 was little. In the case of maleic acid which has similar structure to succinic acid, the extractability for maleic acid was higher than that for succinic acid. It was mainly due to the difficulty of deprotonation of second carboxylic group by intramolecular hydrogen bonding.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.