• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.253-260
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• 2024

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm²/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

• 청정기술
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• 제17권1호
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• pp.69-77
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• 2011

[ $CO_2$ ]원천 분리 수소제조 반응시스템은 금속 산화물의 산화/환원 반응을 이용하여 기존의 수증기-메탄 개질 반응을 3단계의 반응시스템으로 분리함으로써 메탄 연소 시 발생되는 $CO_2$를 원천적으로 분리함과 동시에 고순도 수소를 별도의 후단 공정없이 직접 생산해 내는 신 개념의 수소 생산 기술이다. 반응 시스템은 크게 연료(즉, $CH_4$)가 공급되는 연료반응기(FR: Fuel Reactor), 수증기가 공급되는 수증기반응기(SR: Steam Reactor) 및 공기가 공급되는 공기반응기(AR: Air Reactor)로 구성되며, 다른 반응기와 비교하여 반응 매체의 전환율과 선택도를 높이기 위하여 긴 체류 시간을 확보할 수 있는 두 개의 이동 층(FR, SR)으로 구성되었다. 본 연구에서는 200 L/h의 수소를 생산할 수 있는 매체 순환식 이동층 반응기 제작을 목적으로 수소발열량 기준 0.55kW급 이동 층 반응기의 개념 설계 및 cold model을 설계 제작하고 주요 운전 변수에 따른 수력학적 특성을 결정하였다. 개념 설계 결과 원하는 매체 전환율을 얻기 위해 필요한 고체 순환속도범위($20{\sim}100kg/m^2s$)를 결정하였다. Cold-model 실험 결과, loop-seal의 유속이 증가함에 따라 고체 순환 속도가 증가하였으며 이를 통하여 고체 순환속도 조절이 가능하였다. 반응시스템의 안정적인 조업을 위해서는 이동층(FR, SR) 조업 조건을 최소 유동화 속도 부근으로 유지하는 것이 좋은 것으로 나타났다. 이동층 내 고체 체류 량은 기상유속 및 고체 순환 속도 종가에 따라 감소하였다. 본 연구를 통하여 조업조건에서 개념 설계에서 원하는 고체 순환 속도 및 흐름 특성을 얻을 수 있음을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 한국결정성장학회지
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• 제24권6호
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• pp.252-255
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• 2014

ITO(indium tin oxide) 박막을 RF 마그네트론 스퍼터링법에 의해 산소 분압을 0에서 $6{\times}10^{-5}$ Pa로 변화시킨 조건 하에서 PET 기판 위에 증착하였고, 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성과 결정성의 변화를 조사하였다. 산소 분압이 $1{\times}10^{-5}$ Pa 이하에서는 증착된 ITO 박막은 비정질 구조를 가지는 반면에 $2{\times}10^{-5}$ Pa 이상에서는 결정질임을 확인하였다. 이러한 구조적 변화와 더불어 전하 캐리어 농도와 비저항이 증가하였다. 산소 분압이 $4{\times}10^{-5}$ Pa에서 최소 비저항($9.8{\times}10^{-4}{\Omega}{\cdot}cm$)을 얻을 수 있었다. ITO/PET 박막의 광투과율도 산소 분압이 증가함에 따라 증가하였으며 산소 분압 $4{\times}10^{-5}$ Pa에서 80 % 이상을 나타내었다. 본 연구를 통하여 최적의 산소 분압 선정이 ITO 박막의 결정성 향상, 캐리어 밀도 향상 그리고 전기전도도 향상 효과를 나타냄을 확인하였다.

• 한국표면공학회지
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• 제38권5호
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• pp.193-197
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• 2005

Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio ($O_{2}/O_{2}+Ar$ on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over $13\%$ of oxygen gas ratio. Increasing oxygen gas ratio up to $80\%$ was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of $3.6{\times}10^{-3}{\Omega}{\cdot}cm$ was obtained in the range of $20\%$ to $40\%$ of oxygen gas ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• 한국재료학회지
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• 제27권8호
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• pp.438-444
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• 2017

In this work, the effects of hydrogen reduction on the microstructure and thermoelectric properties of $(GeTe)_{0.85}(AgSbTe_2)_{0.15}$ (TAGS-85) were studied by a combination of gas atomization and spark plasma sintering. The crystal structure and microstructure of TAGS-85 were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The oxygen content of both powders and bulk samples were found to decrease with increasing reduction temperature. The grain size gradually increased with increasing reduction temperature due to adhesion of fine grains in a temperature range of 350 to $450^{\circ}C$. The electrical resistivity was found to increase with reduction temperature due to a decrease in carrier concentration. The Seebeck coefficient decreased with increasing reduction temperature and was in good agreement with the carrier concentration and carrier mobility. The maximum power factor, $3.3{\times}10^{-3}W/mK^2$, was measured for the non-reduction bulk TAGS-85 at $450^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.14-14
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• 2011

AlInN has been studied extensively over the past few years due to its interesting material properties that are not present in other ternary nitrides. However, basic material study of AlInN has not been reported as much compared to device applications due to the difficulty in the growth. We have performed the material studies from various aspects. A secondary ion mass spectrometry (SIMS) has shown high oxygen content above $1{\times}10^{18}\;cm^{-3}$ with its insensitivity to the growth conditions. While the free carrier concentration observed by the capacitance-voltage (C-V) measurements was about $3{\times}10^{17}\;cm^{-3}$, the activation energy measured by temperature dependent C-V was only about 4 meV. Si doped AlInN (Si level ${\sim}2{\times}10^{18}\;cm^{-3}$) showed almost no carrier freeze-out at carrier density of $1{\times}10^{18}\;cm^{-3}$. More studies were carried out with a transmission electron microscopy, time-resolved photoluminescence and other analytical techniques to understand the results from SIMS and C-V studies. In this report, we will discuss the possible correlations between the abnormal characteristics in AlInN.

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 The 7th Summer Workshop of the Membrane Society of Korea
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• pp.15-18
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• 1999

A simple mathematical model for facilitated mass transport through a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation. The current model demonstrates that the facilitation factor depends on the extent of concentration fluctuation, the time scale ratios of diffusion to chemical reaction and the ratio of the carrier concentration to the solute solubility in matrix. The model was examined against the experimental data on oxygen transport in membranes containing metallo-porphyrin carriers, and the agreement was exceptional (within 10% error). The basic concept of this approach was applied to separate olefin from olefin/paraffin mixtures. A proprietaty carrier, developed here, resulted that the selectivity of propylene over propane was more than 120 and the propylene permeance exceed 40 gpu.