• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.125.2-125.2
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• 2015

The evolution of oxidation states of vanadium is monitored with ambient pressure X-ray photoemission spectroscopy. As the pressure of oxygen gas and surface temperature change, the formations of various oxidation states of vanadium are observed on the surface. Under 100mTorr of the oxygen gas pressure and 523K of sample temperature, VO2 and V2O5 are formed on the surface. The temperature-dependent resistance measurement on grown sample shows a clear metal-insulator transition near 350K. In addition, the measurement of Raman spectroscopy displays the structural change from monoclinic to rutile structures across the phase transition temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.64-67
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• 2000

Element distribution analysis and degradation characteristics of the ZnO varistors fabricated at the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the special electrical-furnace which is equipped with the vacuum system. The Gases of injection at sintering- process were oxygen, air, nitrogen and argon respectively. Element and quantitative analysis in the microstructure of ZnO varistors made use of EPMA equipment. Degradation characteristics were showed by DC degradation tests at $115{\pm}2\;^{\circ}C$ for period up to 13 h. From above analysis, it is found that at the DC degradation test the ZnO varistor sintered in oxygen atmosphere showed the excellent prop properties among them and these results could be explain by element and quantitative analysis in ZnO microstructure.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.207-212
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• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.734-739
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• 2005

Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 한국수산과학회지
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• 제29권5호
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• pp.614-619
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• 1996

자연환경 아래에서 동죽의 산소소비 경향을 파악하기 위하여 1994년 1월부터 12월까지 매월 군산연안 간석지에서 채집한 동죽을 대상으로 산소소비량을 측정하였다. 동죽은 각장 2cm 그룹(1세군)과 각장 3cm 그룹 (2세군)으로 나누어 실험하였다. 온도와 염분에 따른 각장 그룹별 산소소비경향을 보면 각장 2cm 그룹과 3cm 그룹 모두 온도와 염분이 낮을수록 산소소비량은 감소하는데 온도에 따른 감소 경향보다는 염분 저하에 따른 감소 경향이 더 크게 나타났다. 그리고 각장 3cm 그룹에서의 감소율이 각장 2cm 그룹에서 보다 더 크게 나타났다. 한편, 계절에 따른 동죽의 산소소비경향은 간석지 온도에 따라 변화하는데 동절기인 2월에는 $0.5\;O_2mg{\cdot}g^{-1}{\cdot}h^{-1}$ 미만의 낮은 산소소비량을 보이지만 하절기인 $7\~8$월에는 $1.93\~2.44\;O_2mg{\cdot}g^{-1}{\cdot}h^{-1}$의 높은 산소소비량을 나타내었다. 각장에 따른 산소소비경향은 각장 2cm 그룹이 3cm 그룹에 비하여 높은 산소소비량을 나타내었으며, 두 그룹간의 산소소비량 차이는 온도가 높은 하절기에 더욱 크게 나타났다. 계절 온도에 따른 산소소비의 경향을 회귀직선식으로 표시하면 각장 2cm 그룹의 경우는 $Y=e^{-1.6312+0.0879X}(r^2=0.9466)$, 각장 3cm 그룹의 경우는 $Y=e^{-2.2366+0.0994x}(r^2=0.9305)$로 각각 표시되었으며, 두 그룹간 기울기에 유의의 차가 없어 계절에 따른 산소소비 경향은 두 그룹간에 차이가 없었다.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.18-22
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• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

• 한국분무공학회지
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• 제21권1호
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• pp.29-36
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• 2016

The effect of high ambient temperature and pressure conditions on the combustion performance of n-butanol, n-heptane and its mixing fuel (BH 20) were studied in this work. To reveal this, the closed homogeneous reactor model applied and 1000-1200 K of the initial temperature, 20-30 atm of initial pressure and 1.0 of equivalence ratio were set to numerical analysis. It was found that the results of combustion temperature was increased and the ignition delay was decreased when the ambient conditions were elevated since the combustion reactivity increased at the high ambient conditions. On the contrary, under the low combustion temperature condition, the combustion pressure was more influenced by the ambient temperature in the same ambient conditions. In addition, the total mass and the mass density of tested fuels were influenced by the ambient pressure and temperature. Also, soot generation of mixing fuel was decreased than n-heptane fuel due to the oxygen content of n-butanol fuel.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.131.2-131
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• 1998