• Korean Journal of Fisheries and Aquatic Sciences
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• v.42 no.4
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• pp.373-379
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• 2009

This study investigated oxygen consumption rate (OCR), $Q_{10}$ coefficient and ammonia excretion rate of the greenling, Hexagrammos otakii Jordan et Starks with the average body weight of 250 g in a semi-recirculated respiratory measuring system. The experiment was done under three different water temperatures (10, 15, $20^{\circ}C$) and five different ambient ammonia concentrations (0, 2.5, 5, 10, 20 mg/L). As the water temperature and ambient ammonia concentration increased the OCR has significantly increased (P<0.05). Given experimental conditions, the OCR of greenling were $50.8{\sim}159.4\;mg\;O_2\;kg^{-1}\;hr^{-1}$ and the relationship of water temperature (T) and ambient ammonia concentration (C) on the OCR were following: OCR = 41.3 - 1.87T - 7.38C + $0.463T^2$ + $0.66lC^2$ + 0.642TC - $0.011T^3$ - $0.010C^2$ - $0.031TC^2$ - $0.001T^2$C ($r^2$= 0.9226). $Q_{10}$ coefficients were $1.88{\sim}3.50$ for $10^{\circ}C$ to $15^{\circ}C$, $1.03{\sim}2.73$ for $15^{\circ}C$ to $20^{\circ}C$ and $1.40{\sim}1.90$ for $10^{\circ}C$ to $20^{\circ}C$, respectively. In general, the ammonia excretion rate tended to increase with increasing of the water temperature within normal ambient ammonia concentration. However, interestingly, it was observed that ammonia was absorbed rather than excreted above the ambient ammonia concentration of $2.5\;mg\;L^{-1}$, regardless of the water temperature. Thus, the largest ammonia absorption rate (AAR) was obserbed at the level of $98.4\;mg\;TAN\;kg^{-1}\;hr^{-1}$. The relationship ambient ammonia concentration (C) on AAR was following: Y = 1.61 + $10.9X^{0.7}$ ($r^2$ = 0.889).

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.206-212
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• 1997

The reflow characteristics of copper, which is expected to be used as interconnection materials in the next generation semiconductor devices, were investigated. Copper films were deposited on hole and trench patterns by metal organic chemical vapor deposition and annealed in nitrogen and oxygen ambient with the annealing temperatures ranging from $350^{\circ}C$ to $550^{\circ}C$. Copper films were not reflowed into the patterns upon the annealing in nitrogen ambient, but reflowed at the annealing temperature higher than $450^{\circ}C$ in oxygen ambient. It is considered that the reflow takes place as the heat generated by the oxidation of copper liquefies the copper film partly and the liquid copper fills the patterns for minimizing the surface energy and the potential energy. Upon the annealing in oxygen ambient, the copper oxide whose thickness was less than 300$\AA$ formed at the surface of an agglomerate and the resistivity of copper film increased drastically at an annealing temperature of $550^{\circ}C$ due to the copper agglomeration.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.48-48
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• 2000

• Journal of Astronomy and Space Sciences
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• v.39 no.3
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• pp.87-98
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• 2022

The Far-UltraViolet (FUV) imager onboard the Ionospheric Connection Explorer (ICON) spacecraft provides two-dimensional limb images of oxygen airglow in the nightside low-latitude ionosphere that are used to determine the oxygen ion density. As yet, no FUV limb imager has been used for climatological analyses of Equatorial Plasma Bubbles (EPBs). To examine the potential of ICON/FUV for this purpose, we statistically investigate small-scale (~180 km) fluctuations of oxygen ion density in its limb images. The seasonal-longitudinal variations of the fluctuation level reasonably conform to the EPB statistics in existing literature. To further validate the ICON/FUV data quality, we also inspect climatology of the ambient (unfiltered) nightside oxygen ion density. The ambient density exhibits (1) the well-known zonal wavenumber-4 signatures in the Equatorial Ionization Anomaly (EIA) and (2) off-equatorial enhancement above the Caribbean, both of which agree with previous studies. Merits of ICON/FUV observations over other conventional data sets are discussed in this paper. Furthermore, we suggest possible directions of future work, e.g., synergy between ICON/FUV and the Global-scale Observations of the Limb and Disk (GOLD) mission.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.749-764
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• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• Journal of the Korean Society of Safety
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• v.10 no.2
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• pp.84-91
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• 1995

The characteristics of critical spontaneous ignition of granulated activated carbon were investigated In atmospheres of differing oxygen concentration. At the same concentration the larger vessels yielded the lower critical spontaneous ignition temperature. At the same vessel, as the concentration of oxygen was reduced, Ignition occurred later and at higher ambient temperature, and critical spontaneous ignition temperature increased. The apparent activation energy calculated from the Frank-Kamenetskii's ignition theory appeared to be the slight different value respectively and the mean apparent activation energy was 19850㎈/㏖.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.873-877
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• 2012

The effect of oxygen pressure in the synthesis of ZnO nanostructures through thermal evaporation of Zn powder was investigated. The thermal evaporation process was carried out in oxygen ambient for 1 hr at $1,000^{\circ}C$ under different pressures. The oxygen pressure was changed in range of 0.5 ~ 900 Torr. Any nanostructure was not formed on the specimens prepared at oxygen pressures lower than 10 Torr. When oxygen pressure was 100 Torr, ZnO nanowires were observed. With increasing the oxygen pressure to 500 Torr, the morphology of ZnO nanostructures changed from wire to tetrapod. For all the samples, room temperature photoluminescence spectra show a strong green emission peak at around 550 nm.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..