Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ferroelectric Properly of Bi3.75La0.25Ti3O12 Ceramic Sintered in the Ambient

분위기 소결공정에 의한 Bi3.75La0.25Ti3O12세라믹의 강유전특성

  • 김응권 (성균관 대학교 정보통신대학원) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부) ;
  • 박기엽 (부산정보대학 전기전자계열) ;
  • 송준태 (성균관 대학교 정보통신대학원)
  • Published : 2002.09.01
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Abstract

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

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References

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