• 대한전자공학회논문지
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• 제23권4호
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• pp.484-489
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• 1986

A device with variable stepped oxide layer along the edge region of Schottky junction have been designed and fabricated. The effect of this stepped oxide layer in the edge region improves the breakdown voltage as a result of the by increase of the depletion layer width, and decreases the leakage current as compared to the effect of conventional field oxide layer, when the reverse voltage was applied. Experimental results shown that the Schottky diode with the the reverse voltage was applied. Experimenal results show that the Schottky diode with the optimal stepped oxide layer maintains nearly ideal I-V characteristics and excellent breakdown voltage(170V) by reducing the edge effect inherent in metal-semiconductor contacts. The optimal conditions of stepped oxide layer are 1700\ulcornerin thickness and 10\ulcorner in length.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Corrosion Science and Technology
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• 제20권3호
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• pp.118-128
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• 2021

The oxide layer in samples taken from an irradiated Zr-2.5Nb pressure tube from a CANDU-PHWR reactor was analyzed using electron probe microanalysis (EPMA). The examined tube had been exposed to temperatures ranging from 264 to 306 ℃ and a neutron fluence of 8.9 × 10²¹ n/cm² (E > 1 MeV) for the maximum 10 effective full-power years in a nuclear power plant. Measuring oxide layer thickness generally employs optical microscopy. However, in this study, analysis of the oxide layer from the irradiated pressure tube components was undertaken through X-ray image mapping obtained using EPMA. The oxide layer characteristics were analyzed by X-ray image mapping with 256 × 256 pixels using EPMA. In addition, the slope of the oxide layer was measured for each location. A particular advantage of this study was that backscattered electrons and X-ray image mapping were obtained at a magnification of 9,000 when 20 kV volts and 30 uA of current were applied to radiation-shielded EPMA. The results of this study should usefully contribute to the study of the oxide layer properties of various types of metallic materials irradiated by high radiation in nuclear power plants.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.222-225
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• 2010

The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

• 한국자기학회지
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• 제18권2호
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• pp.79-83
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• 2008

본 논문에서는 초기 산화 피막의 형성이 전기화학적 방법을 이용한 다공성 알루미나 막 제작에 미치는 영향을 살펴보았다. 다공성 알루미나 막의 제작은 전해 연마된 알루미늄 포일을 사용하여 두 치체의 양극산화 과정을 통해 이루어졌으며 양극산화 시초기 산화 피막이 알루미나 막 표면의 기공구조형성에 미치는 영향을 알아보고자 일차 양극산화 전 1 V의 낮은 전압으로 약 10nm두께의 산화 피막을 형성하였다. 이후 옥살산 용액 안에서 40V의 전압으로 양극산화 과정을 수행한 결과 양극산화 반응은 매우 안정적이었으며 측정된 양극산화 전류 역시 일정하게 유지됨을 알 수 있었다. 이와 달리 초기 산화 피막이 형성되지 않았을 경우 양극산화 과정은 매우 불안정하였으며 양극산화 과정동안 전류가 계속적으로 증가함을 보였다. 이러한 결과를 통해 알루미늄 포일 표면에 초기 산화 피막을 형성함으로써 전기장의 불균일한 분포에 의해 발생하는 표면 손상을 방지하며 안정적인 양극산화 과정을 통해 다공성 알루미나 산화 막을 제작할 수 있음을 확인하였다.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2499-2510
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• 2020

We performed 3-D (3-dimensional) IVR (In-Vessel Retention) natural convection experiments simulating the oxide layer in the three-layer configuration, varying the aspect ratio (H/R). Mass transfer experiment was conducted based on the analogy to achieve high Ra_H's of 1.99 × 10¹²-6.90 × 10¹³ with compact facilities. Comparisons with 2-D (2-dimensional) experiments revealed different local heat transfer characteristics on upper and lower boundaries of the oxide layer depending on the H/R. For the 3-D shallow oxide layer, the multi-cell flow patterns appeared and the number of cells was considerably increased with the H/R decreases, which differs with the 2-D experiments that the number of cells was independent on H/R. Thus, the enhancement of the downward heat transfer and the mitigation of the focusing effect were more noticeable in the 3-D experiments.

• 한국위성정보통신학회논문지
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• 제10권2호
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• pp.90-94
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• 2015

본 연구에서는 Solution Process를 적용한 Strontium Oxide를 배향막으로 사용한 경우의 액정배향 특성에 대해서 연구하였다. Stronium Oxide 는 High K 물질로 배향막으로 사용할 경우 임계치 전압을 효율적으로 조절할 수 있는 장점이 있으나, 액정분자와의 배향에 관한 상호관계에 대해서는 많은 연구가 진행되지 않았었다. 0.1~0.4 Mol 롤 농도를 조절한 Strontium Oxide를 Solution Process 로 배향막으로서 제조함으로써, 보다 생산성이 좋은 방법을 제시할 수 있었으며, 재료가 갖는 우수한 특성을 반영한 액정디스플레이의 제조가 가능하였다. 샘플 측정결과 1.447~1.613V 의 임계치 전압특성을 보여주어 기존의 방법으로 제조된 액정디스플레 이와 동등 혹은 우월한 특성을 갖고 있음을 알 수 있었다.

• 전자공학회논문지D
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• 제36D권10호
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• pp.17-22
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• 1999

이 논문에서는 플래시 EEPROM 셀에서의 데이터 보존 특성을 개선하기 위해서 IPD(inter-poly-dielectrics) 층을 사용하는 새로운 제안에 관한 연구 결과들을 논의하였다. 이 연구를 위하여 약 10nm 두께의 게이트 산호막을 갖으며 또한 ONO 또는 ONON IPD 층을 갖는 적층형-게이트 플래시 EEPROM 셀들을 제작하였다. 측정 결과를 보면 ONO IPD 층을 갖는 소자들은 데이터 보존 특성이 심각하게 열화 되었으며, 그 특성의 활성화 에너지도 0.78 eV로 플래시 EEPROM 셀을 위하여 요구되는 최소 값(1.0 eV)보다 상당히 낮았다. 이는 구동 소자용 트랜지스터(peripheral MOSFET) 소자들의 게이트 산호막을 형성하기 위한 건열산화 공정 바로 직전에 실시하는 세정 공정 동안 IPD 층의 상층 산화막의 일부 또는 전부가 식각되었기 때문인 것으로 믿어진다. 반면에, ONON IPD 층을 갖는 소자들의 데이터 보존 특성은 상단히 (약 50% 이상) 개선되었으며 활성화 에너지도 1.1 eV인 것으로 나타났다. 이는 IPD 층에서 상층 산화막위에 있는 질화막이 그 세정 공정 동안 산화막이 식각되는 것을 방지해 주기 때문임에 틀림없다.

• 한국재료학회지
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• 제33권2호
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• pp.77-86
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• 2023

High-temperature oxidation of a Ni-based superalloy was analyzed with samples taken from gas turbine blades, where the samples were heat-treated and thermally exposed. The effect of Cr/Ti/Al elements in the alloy on high temperature oxidation was investigated using an optical microscope, SEM/EDS, and TEM. A high-Cr/high-Ti oxide layer was formed on the blade surface under the heat-treated state considered to be the initial stage of high-temperature oxidation. In addition, a PFZ (γ' precipitate free zone) accompanied by Cr carbide of Cr₂₃C₆ and high Cr-Co phase as a kind of TCP precipitation was formed under the surface layer. Pits of several ㎛ depth containing high-Al content oxide was observed at the boundary between the oxide layer and PFZ. However, high temperature oxidation formed on the thermally exposed blade surface consisted of the following steps: ① Ti-oxide formation in the center of the oxide layer, ② Cr-oxide formation surrounding the inner oxide layer, and ③ Al-oxide formation in the pits directly under the Cr oxide layer. It is estimated that the Cr content of Ni-based superalloys improves the oxidation resistance of the alloy by forming dense oxide layer, but produced the σ or µ phase of TCP precipitation with the high-Cr component resulting in material brittleness.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.13-15
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• 2017

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.