Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Seed Layer and Thermal Treatment on Atomic Layer Deposition-Grown Tin Oxide

  • Received : 2010.07.07
  • Accepted : 2010.09.03
  • Published : 2010.10.31
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Abstract

The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

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