• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.6-11
• /
• 2001

More than ten kinds of oxide thin films and their heterostructure have been successfully fabricated on SrTiO$_3$(001) substrates by laser molecular beam epitaxy (laser MBE). Measurements of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and X-ray small-angle reflectivity reveal that the surfaces and interfaces are atom-level-smooth. The unit cell layers and the lattice structure are perfect. The electrical and optical properties of BaTiO$_3$-x thin films and BaTiO$_3$/SrTiO$_3$ (BTO/STO) superlattices were examined. The all-perovskite oxide P-N junctions have been successfully fabricated and the better I-V curves were observed.

• Journal of the Korean Ceramic Society
• /
• v.45 no.4
• /
• pp.191-195
• /
• 2008

Highly ordered silver nanowire with a diameter of 10 nm was arrayed by electroless deposition in a porous anodic aluminum oxide(AAO) membrane. The AAO membrane was fabricated electrochemically in an oxalic acid solution via a two-step anodization process, while growth of the silver nanowire was initiated by using electroless deposition at the long-range-ordered nanochannels of the AAO membrane followed by thermal reduction of a silver nitrate aqueous solution by increasing the temperature up to $350^{\circ}C$ for an hour. An additional electro-chemical procedure was applied after the two-step anodization to control the pore size and channel density of AAO, which enabled us to fabricate highly-ordered silver nanowire on a large scale. Electroless deposition of silver nitrate aqueous solution into the AAO membrane and thermal reduction of silver nanowires was performed by increasing the temperature up to $350^{\circ}C$ for 1 h. The morphologies of silver nanowires arrayed in the AAO membrane were investigated using SEM. The chemical composition and crystalline structure were confirmed by XRD and EDX. The electroless-deposited silver nanowires in AAO revealed a well-crystallized self-ordered array with a width of 10 nm.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.231-242
• /
• 2014

An interconnect in solid oxide fuel cells (SOFCs) electrically connects unit cells and separates fuel from oxidant in the adjoining cells. The interconnects can be divided broadly into two categories - ceramic and metallic interconnects. A thin and gastight ceramic layer is deposited onto a porous support, and metallic interconnects are coated with conductive ceramics to improve their surface stability. This paper provides a short review on ceramic materials for SOFC interconnects. After a brief discussion of the key requirements for interconnects, the article describes basic aspects of chromites and titanates with a perovskite structure for ceramic interconnects, followed by the introduction of dual-layer interconnects. Then, the paper presents protective coatings based on spinel-or perovskite-type oxides on metallic interconnects, which are capable of mitigating oxide scale growth and inhibiting Cr evaporation.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.7 s.184
• /
• pp.138-145
• /
• 2006

A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.232.2-232.2
• /
• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.86.1-86.1
• /
• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.203-203
• /
• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Membrane and Water Treatment
• /
• v.9 no.2
• /
• pp.123-128
• /
• 2018

Common aquaculture practices include the use of certain pharmaceuticals such as antibiotics in avoiding diseases and promoting a healthier growth of the culture. The aim of this study is to monitor and assess the influence of different low oxytetracycline concentrations on the transformation of nitrogen compounds under aeration condition in a lab-scale recirculating aquaculture system (RAS). Over $1mg\;L^{-1}$ dose of oxytetracycline to aquaculture had induced ammonia($NH_4-N$), nitrate($NO_3-N$), soluble COD accumulation in RAS. In addition, nitrous oxide ($N_2O$) emission from RAS was significantly reduced during the oxytetracycline dose periods. After ceasing the dose of oxytetracycline, ammonia oxidation and nitrous oxide re-emission were observed. This observation indicated that low concentrations of oxytetracycline could affect the nitrogen species in RAS. Also, the emission mechanisms of $N_2O$ may not be only dependent on nitrification process but also dependent on denitrification process in our RAS system.

• Nuclear Engineering and Technology
• /
• v.54 no.8
• /
• pp.2771-2782
• /
• 2022

When assessing the radiological consequences of postulated accident scenarios, it is of primary interest to determine the amount of radioactive fission gas accumulated in the fuel rod free volume. The state-of-the-art semi-empirical approach (ANS 5.4-2010) is reviewed and compared with a mechanistic approach to evaluate the release of radioactive fission gases. At the intra-granular level, the diffusion-decay equation is handled by a spectral diffusion algorithm. At the inter-granular level, a mechanistic description of the grain boundary is considered: bubble growth and coalescence are treated as interrelated phenomena, resulting in the grain-boundary venting as the onset for the release from the fuel pellets. The outcome is a kinetic description of the release of radioactive fission gases, of interest when assessing normal and off-normal conditions. We implement the model in SCIANTIX and reproduce the release of short-lived fission gases, during the CONTACT 1 experiments. The results show a satisfactory agreement with the measurement and with the state-of-the-art methodology, demonstrating the model soundness. A second work will follow, providing integral fuel rod analysis by coupling the code SCIANTIX with the thermo-mechanical code TRANSURANUS.

• Journal of Powder Materials
• /
• v.16 no.3
• /
• pp.185-190
• /
• 2009

Fe-Cr steels are the most promising candidate for interconnect in solid oxide fuel cells. In this study, an effective, dense and well adherent (LaSr)(CrCo)$O_3$ [LSCC] coating layer was produced onto 430 stainless steel (STS-430) by atmospheric plasma spraying and the oxidation behavior as well as electrical properties of the LSCC coated STS-430 were investigated. A significant oxidation of pristine STS-430 occurred at $800^{\circ}C$ in air environment, leading to the formation of $Cr_2O_3$ and $FeCr_2O_4$ scale layer up to ${\sim}7{\mu}m$ after 1200h, and consequently increased an area specific resistance of $330\;m{\Omega}{\cdot}cm^2$. Although the plasma sprayed LSCC coating contained the characteristic pore network, the coated samples presented apparent advantages in reducing oxidation growth of STS-430, resulting a decrease in oxide scale thickness of ${\sim}1{\mu}m$ at $800^{\circ}C$ after 1200h. The area specific resistance of the LSCC coated STS-430 was much reduced to ${\sim}7\;m{\Omega}{\cdot}cm^2$ after exposure at $800^{\circ}C$ for 1200h, compared to that of the pristine STS-403.