• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1170-1176
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• 2003

We developed an evolutionary optimization process involving a genetic algorithm and combinatorial chemistry (combi-chem), which was tailored exclusively for tile development of LED phosphors with a high luminescent efficiency, when excited by soft ultra violet irradiation. The ultimate goal of our study was to develop oxide red phosphors, which are suitable for three-band white Light Emitting Diodes (LED). To accomplish this, a computational evolutionary optimization process was adopted to screen a Eu$^{3+}$-doped alkali earth borosilicate system. The genetic algorithm is a well-known, very efficient heuristic optimization method and combi-chem is also a powerful tool for use in an actual experimental optimization process. Therefore the combination of a genetic algorithm and combi-chem would enhance the searching efficiency when applied to phosphor screening. Vertical simulations and an actual synthesis were carried out and promising red phosphors for three-band white LED applications, such as Eu$_{0.14}$Mg$_{0.18}$Ca$_{0.07}$Ba$_{0.12}$B$_{0.17}$Si$_{0.32}$O$_{\delta}$, were obtained.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.618-622
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• 2014

Oxide phosphorescent phosphor has an wide application in ceramic art and decoration due to its chemical and mechanical properties. Here, phosphorescent properties of strontium aluminate phosphor ($SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$) emitting yellowish-green light was investigated with thermal treatment at $1250^{\circ}C$ under air and reducing atmosphere. The characterizations of thermally treated samples were analyzed using X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), fluorescence spectrometer. $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ still showed a good phosphorescent properties after annealing process in reducing atmosphere, while phosphorescence of $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ annealed in air seriously degraded, due to oxidation of $Eu^{2+}$ to $Eu^{3+}$ ions. It was also observed that $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ annealed in reducing atmosphere emitted yellowish-green light during 3 h after being exposed to sunlight.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.133-137
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• 2004

The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.541-544
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• 2004

Multi- wall carbon nanotubes(MWNTs) were synthesized by thermal chemical vapor deposition. The paste for screen printing was composed of MWNTs, organic vehicle and glass frit. Carton nanotube paste was screen-printed on ITO(indium tin oxide) deposited soda lim을 glass, and then heat treatment was performed. Before the surface treatment, turn on field of derive was 2.6 V/$\mu\textrm{m}$. After the surface treatment, the value was changed into 1.8 V/$\mu\textrm{m}$. The anode current of the derive with 2.83 V/$\mu\textrm{m}$(turn on field) was changed 4 $\mu\textrm{A}$ into 390 $\mu\textrm{A}$ at 1,700 V. Adsorption effect of MWNTs onto phosphor of anode plate was observed by the field emission measurement and resulted in bad effects on properties of devices lifetime and emission lighting.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.21-26
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• 2002

In order to search new phosphors for plasma display panel(PDP), phosphate hosts which has a host excitation band at around 150nm were prepared and their luminescent properties were investigated. In the preparation of $YPO_4: Eu\; and\; (Y,Gd)PO_4: Eu$ phosphors, the effect of oxide and oxalate starting materials on prepared phosphors were compared in terms of relative emission intensities and particle characteristics. The results showed that oxalate starting materials gave better performance in emission intensities and smaller size and more round shape phosphors which would be more applicable for high resolution display. Additionally, Gd, V, Nb and Ta ions were doped to $YPO_4:Eu$ and the luminescent properties of the resulant solid solutions were investigated to find efficient sensitizer. Among these ions, Gd, V and Nb ions increased the emission intensities of parent phosphor to around 10%. While Nb ion gave the best result in emission intensities, CIE color coordinate were improved by doping V ion into $YPO_4:Eu$ phosphor to give x=0.6523, y=0.3406 compared to commercial sample.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.319-324
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• 1999

기존의 고상 반응법에 의해 합성된 YNbO4 : Bi 형광체의 발광특성을 개선하기 위하여 B2O3 융체 첨가법으로 형광체를 합성하고, 빛발광(PL) 및 저전압 음극선발광(CL)을 측정하였다. PL 및 CL 모두 415~440 nm 영역에서 강한 청색 발광 스펙트럼을 나타냈으며, 고상 반응의 경우와 마찬가지로 Y/Nb 비율이 화학 양론상의 1:1인 경우보다 결함구조를 인위적으로 조절한 51/49나 54/46에서 최대의 발광강도를 보였다. 한편, 고상 반응에서는 125$0^{\circ}C$에서 4시간 열처리하는 것이 최대의 발광효과를 나타냈으나, B2O3융제를 첨가하고 110$0^{\circ}C$에서 열처리한 시료가 결정성이 좋고 입자의 크기 및 형태가 균일하여 PL뿐만 아니라 CL에서도 우수한 발광특성을 보였다. B2O3융제를 첨가하는 방법으로 열처리 온도를 낮추고 입자크기와 형태를 조절하여 형광체의 휘도를 개선할 수 있었다.