• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.382-383
• /
• 2007

PMMA plate with nano-sized pattern was synthesized on anodized aluminum oxide template by bluk polymerization method. Anodized aluminum oxide was used as a template to synthesize the PMMA plate with nano-sized pattern. The polymerization of MMA was performed at $75-79^{\circ}C$. It is verified from SPM results that the nano-sized pattern on synthesized PMMA plate was well transferred from that of anodized aluminum oxide template.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.5
• /
• pp.495-500
• /
• 1988

The effectiveness of tri layer resist (TLR) technique is compared with that of single layer resist (SLR) technique in order to make a 0.8um pattern with the linewidth deviation of 10 percents. SLR technique is not appropriate to shape the micro-pattern on oxide and aluminum steps because of the standing wave effect and the light scattering effect in shaping the resist pattern. On the contrary, the uniform line with a width of 0.8um on oxide and aluminum steps can be formed by TLR technique, reducting such effects. The planarization and the light absorption coefficient of the bottom layer resist in TLR are optimized by exposing it to ultra violet light after baking it for 30min at 230\ulcorner. An uniform line with a width of 0.8um on oxide step is defined with the light absorption coefficient of 0.85 whereas that on aluminum step is defined with 0.95.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.531-532
• /
• 2010

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.221-224
• /
• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• Asian-Australasian Journal of Animal Sciences
• /
• v.4 no.1
• /
• pp.79-83
• /
• 1991

Diurnal variation in faecal chromic oxide levels was estimated from 4 hourly faecal sampling of 56 wethers allotted to one of six different feeding patterns. Sampling occurred on days 6 and 7 (Period 1) after a controlled release device was administered, and was repeated on days 14 and 15 (Period 2) following re-randomisation of the wethers to the feeding patterns. Increasing the frequency of feeding tended to be associated with higher faecal chromic oxide levels (p < 0.05), particularly in wethers fed thrice daily at 8 hour intervals. There was no interaction between feeding pattern and period, sampling day or time within-day. There were significant period x time within-day (p < 0.05) and day x time within-day (p < 0.001) interactions, indicating that variation in faecal chromic oxide between sample times was not consistent. This implies that sampling at any time of day is unlikely to result in a biased estimate of pasture intake, providing sufficient samples are collected. Significant period (p < 0.001) and period x day (p < 0.01) effects were associated with slow faecal chromic oxide equilibration in period 1. Equilibration did not occur until after day 7, indicating a need for caution when commencing sampling.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2002.10b
• /
• pp.443-444
• /
• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2009.05a
• /
• pp.240-243
• /
• 2009

Recently, many researches on the development of super-hydrophobic and anti-reflective surfaces have been concentrated on the fabrication of nano-patterned products. The nano-patterned mold is a key to replicate nano-patterned products by mass production techniques such as injection molding and UV molding. The present paper proposes fabricating nano-patterned mold with cost-effective method. The nano-pattern molded was fabricated by electroforming the anodic aluminum oxide template without E-beam lithography. The final mold with nano-patterns showed the pores with the diameter of $100{\sim}120$ nm and the height of 150 nm was fabricated.

• Journal of the Korean Ceramic Society
• /
• v.34 no.7
• /
• pp.699-702
• /
• 1997

The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

• Korean Journal of Materials Research
• /
• v.2 no.1
• /
• pp.76-82
• /
• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Journal of Welding and Joining
• /
• v.30 no.3
• /
• pp.26-31
• /
• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.