• 열처리공학회지
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• 제36권6호
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• pp.374-381
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• 2023

This study develops and evaluates a deep learning model for predicting oxide and nitride layers based on plasma process data. We introduce a novel deep learning-based Varying Coefficient Regressor (VCR) by adapting the VCR, which previously relied on an existing unique function. This model is employed to forecast the oxide and nitride layers within the plasma. Through comparative experiments, the proposed VCR-based model exhibits superior performance compared to Long Short-Term Memory, Random Forest, and other methods, showcasing its excellence in predicting time series data. This study indicates the potential for advancing prediction models through deep learning in the domain of plasma processing and highlights its application prospects in industrial settings.

• 한국표면공학회지
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• 제46권6호
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• pp.235-241
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• 2013

In this study, the effects of alloying elements and thermal aging on the contact resistance of electroplated gold alloy layers were investigated by surface analysis using X-ray photoelectron spectroscopy (XPS). The contact resistance of Au-Ag alloy was lower than that of Au-Ni or Au-Co alloy after thermal aging. The XPS results show that nickel and oxygen present as nickel oxides such as NiO and $Ni_2O_3$ on the surface of gold layers after thermal aging. The increase in the contact resistance after thermal aging is attributable to the nickel oxide layer formed on the surface of the gold layers. The content of nickel diffused from the underlayer during the thermal aging was high in the order of Au-Co, Au-Ni and Au-Ag alloy because the area of grain boundary was large in the order of Au-Ag, Au-Ni and Au-Co alloy.

• 한국재료학회지
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• 제27권8호
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• pp.403-408
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• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.26-29
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• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.353-356
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• 2014

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electron-collecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.300-303
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• 2004

To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.349-350
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• 2012

Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping layers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.

• 자원환경지질
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• 제52권6호
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• pp.519-528
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• 2019

본 논문에서는 2017년 경주시 내남면 용장리 트렌치 단면에서 퇴적층을 관찰할 때 고려해야하는 토양화 과정과 지하수의 유동에 기인하여 나타나는 특성을 기술하였다. 지표로부터 굴착된 트렌치 단면은 토양화 과정과 지하수 유동에 의한 흔적을 포함하고 있어 퇴적학자들의 관찰에 영향을 줄 수 있다. 이 사이트 토양은 비교적 초기단계의 토양화 과정에 있어서 퇴적층의 특징을 관찰하는데 크게 어려움을 주지 않으나, 퇴적층리 관찰을 가장 어렵게 하는 요인은 지하수의 이동에 따른 망간산화물과 철산화물의 침전이었다. 지하수면을 따라 형성된 이 침전물은 퇴적층의 경계면에 형성되어 있기도 하고, 지하수면의 위치 또한 접하고 있는 퇴적층의 입자 크기에 따라 달라지므로 여러 위치에서 침전물이 관찰되었다. 또 이들 지하수면 상하부에서는 각기 철의 산화환원 상태에 따라 색변화가 관찰되므로 퇴적층 기술에 주의가 요구된다. 미세기공을 통해 모세관 현상으로 상부로 이동하는 지하수에 의해 일부 세립질 퇴적층이 지하수면 수 미터 상부까지 환원상태를 유지하면서 환원철 상태를 지시하는 색을 띠기도 하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.45.1-45.1
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• 2011

Cobalt-free $La_xSr_{4-x}Fe_6O_{13}$ ($0{\leq}x{\leq}2$) oxide have been synthesized and investigated as a potential cathode material for solid oxide fuel cells (SOFCs). $Sr_4Fe_6O_{13}$ consists of alternating perovskite layers ($Sr_4Fe_2O_8$) containing iron cations in octahedral oxygen coordination and $Fe_4O_5$ layers where iron cations have 5-fold coordination of two types-square pyramids and trigonal bipyramids. Our preliminary electrochemical testes of pristine $Sr_4Fe_6O_{13}$ show a rather high area specific resistance ($0.47{\Omega}cm^2$ at $700^{\circ}C$) for ~20 ${\mu}m$ thick layers with CGO electrolyte. The electrochemical performances are improved by La addition up to x=1 ($La_1Sr_3Fe_6O_{13}$, $0.06{\Omega}cm^2$ at $700^{\circ}C$). In addition, thermal expansion coefficient (TEC) values of $La_1Sr_3Fe_6O_{13}$ specimen demonstrated $15.1{\times}10^{-6}\;^{\circ}C^{-1}$ in the range of 25-900$^{\circ}C$, which provides good thermal expansion compatibility with the CGO electrolyte. An electrolyte supported (300-${\mu}m$-thick) single-cell configuration of $La_1Sr_3Fe_6O_{13}$/CGO/Ni-CGO delivered a maximum power density of 584 $mWcm^{-2}$ at $700^{\circ}C$. In addition, an anode supported single cell by YSZ electrolyte (10-${\mu}m$-thick) with a porous CGO interlayer between the cathode and the electrolyte to avoid undesired interfacial reactions exhibited 1,517 $mWcm^{-2}$ at $800^{\circ}C$. The unique composition of $La_1Sr_3Fe_6O_{13}$ with low thermal expansion coefficient and higher electrochemical properties could be a good cathode candidate for intermediate temperature SOFCs with CGO and YSZ electrolyte.