• Title/Summary/Keyword: Oxide etching

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Oxide etching characteristics and Etched Profiles by the Enhanced Inductive Coupled Plasma (산화막 식각에 적용된 E-ICP효과와 형상단면비교)

  • 조수범;송호영;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.612-615
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    • 2000
  • The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

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Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer

  • Kim, Keon-Soo;Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.270-271
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    • 2008
  • The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

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Organic Acid-Based Wet Chemical Etching of Amorphous Ga-Doped Zinc Oxide Films on Glass and PET substrates

  • Lee, Dong-Kyoon;Lee, Seung-Jung;Bang, Jung-Sik;Park, Mun-Gi;Yang, Hee-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1408-1411
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    • 2009
  • This paper describes organic acid-based wet chemical etching behaviors of amorphous Ga-doped zinc oxide (GZO) thin film sputter-deposited at low temperature (room temperature). Wet etch parameters such as etching time, temperature, and etchant concentration are investigated for formic and citric acid etchants, and their effects on the etch rate, etch residue and the feature of edge line are compared.

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THE EFFECTS OF SURFACE TREATMENT OF FRACTURED METAL-CERAMIC CROWN ON BOND STRENGTH OF REPAIR RESIN (파절된 도재전장관의 표면처리 방법에 따른 수복레진의 접합강도에 관한 연구)

  • Jeong, Ae-Ri;Vang, Mong-Sook
    • The Journal of Korean Academy of Prosthodontics
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    • v.29 no.2
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    • pp.117-127
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    • 1991
  • The purpose of this study was to evaluate the effect of surface treatment of fractured metal-ceramic crown on bond strength of porcelain repair resin. The specimens were divided into two groups for metal specimens add five groups for porcelain specimens by surface treatment methods. the metal specimens were treated by 2 methods. : micro-sandblasting with $50{\mu}m$ aluminum oxide and grinding with diamond bur. The porcelain specimens were treated by 5 methods : micro-sandblasting with $50{\mu}m$ aluminum oxide, grinding with diamond bur, etching with porcelain etching agent, combination of micro-sandblasting and etching procedure, and combination of grinding and etching procedure. After surface treatment, each specimen was bonded with composite resin and the bond strength was measured and the surface texture was observed by scanning electromicroscope(SEM). The results were as follows : 1. There was significant difference in shear bond strength between metal specimen and prorcelain specimen. 2. Bood strength of metal specimens treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting. 3. Bond strength of porcelain specimen treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting and porcelain etching agent. 4. There was no significant difference in shear bond strength between the group treated with diamond bur and combined treatment groups respectively. 5. The large undercuts were observed in group treated with diamond bur by SEM.

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Impact of Wet Etching on the Tribological Performance of 304 Stainless Steel in Hydrogen Compressor Applications

  • Chan-Woo Kim;Sung-Jun Lee;Chang-Lae Kim
    • Tribology and Lubricants
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    • v.40 no.3
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    • pp.71-77
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    • 2024
  • Hydrogen has emerged as an eco-friendly and sustainable alternative to fossil fuels. However, the utilization of hydrogen requires high-pressure compression, storage, and transportation, which poses challenges to the durability of compressor components, particularly the diaphragm. This study aims to improve the durability of 304 stainless steel diaphragms in hydrogen compressors by optimizing their surface roughness and corrosion resistance through wet etching. The specimens were prepared by immersing 304 stainless steel in a mixture of sulfuric acid and hydrogen peroxide, followed by etching in hydrochloric acid for various durations. The surface morphology, roughness, and wettability of the etched specimens were characterized using optical microscopy, surface profilometry, and water contact angle measurements. The friction and wear characteristics were evaluated using reciprocating sliding tests. The results showed that increasing the etching time led to the development of micro/nanostructures on the surface, thereby increasing surface roughness and hydrophilicity. The friction coefficient initially decreased with increasing surface roughness owing to the reduced contact area but increased during long-term wear owing to the destruction and delamination of surface protrusions. HCl-30M exhibited the lowest average friction coefficient and a balance between the surface roughness and oxide film formation, resulting in improved wear resistance. These findings highlight the importance of controlling the surface roughness and oxide film formation through etching optimization to obtain a uniform and wear-resistant surface for the enhanced durability of 304 stainless steel diaphragms in hydrogen compressors.

Analysis of Amorphous Carbon Hard Mask and Trench Etching Using Hybrid Coupled Plasma Source

  • Park, Kun-Joo;Lee, Kwang-Min;Kim, Min-Sik;Kim, Kee-Hyun;Lee, Weon-Mook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.74-74
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    • 2009
  • The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

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Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.216-220
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    • 2013
  • The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

A HISTOPATHOLOGICAL STUDY ON THE PULP REACTION OF ADHESIVE RESINS AS PHOSPHORIC ESTER SYSTEM (인산(隣酸) 에스텔계 접착성(接着性) 레진의 치수반응(齒髓反應)에 관(關)한 병리조직학적(病理組織學的) 연구(硏究))

  • Kim, Chul-Ho
    • Restorative Dentistry and Endodontics
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    • v.10 no.1
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    • pp.7-16
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    • 1984
  • The purpose of this study was to investigate the pulpal responses to adhesive resins as phosphoric ester system: "Clearfil F II" (Composite filling material), "Panavia EX" (Composite cementing Material) and "Silar" (Microfilled Compsoite resin) comparing with Zinc-Oxide-Eugenol cement. Total 70 cavities of the permanent healthy teeth from 5 dogs were prepared and placed with experimental resins and Zinc-Oxide-Eugenol cement as control. The dogs were sarificed at 5 intervals of 3 days, one, two, four, six weeks. The specimens were routinely prepared and stained by Hematoxylin-Eosin. Followings were the results obtained through microscopic examination. 1. In cases of Clearfil F II and Panavia EX without etching and lining, pulp response in the early stage showed more severe vascular congestion and hemorrhage than that of Zinc-Oxide-Engenol cement. 2. The pulp response of totally etched cases was similar to that of unetched cases in the groups of Clearfil F II and Panavia EX. 3. The cases of Clearfil F II and Panavia EX with enamel etching showed no significant histologic change compared to that of total cavity etching. 4. The Silar case with total etching showed retarded tendency of histologic recovery compared to Clearfil F II and Panavia EX group. 5. Generally, pulp responses of experimental groups were not severe and the six week case showed the evidence of a histologic recovery.

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A Study on the Formation of Trench Gate for High Power DMOSFET Applications (고 전력 DMOSFET 응용을 위한 트렌치 게이트 형성에 관한 연구)

  • 박훈수;구진근;이영기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.713-717
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    • 2004
  • In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.

Fabrication of Hollow-type Silicon Microneedle Array Using Microfabrication Technology (반도체 미세공정 기술을 이용한 Hollow형 실리콘 미세바늘 어레이의 제작)

  • Kim, Seung-Kook;Chang, Jong-Hyeon;Kim, Byoung-Min;Yang, Sang-Sik;Hwang, In-Sik;Pak, Jung-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2221-2225
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    • 2007
  • Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.