• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Journal of the Korean institute of surface engineering
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• v.54 no.2
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• pp.90-95
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• 2021

Surface modification technique enabling the control of condensation provides various benefit in various engineering systems, such as heat transfer, desalination, power plants, and so on. In this study, lubricant oil-impregnation into Teflon-coated nanoporous anodic oxide layer of aluminum to enhance a de-wetting and mobility of water droplet on surface. Due to the surface treatment improving water-repellency, the condensation mode is changed to dropwise, thus the frequency of sliding condensed water droplet on surface is increased. For these reasons, the surface of oil-impregnated Teflon-coated nanoporous anodic aluminum oxide shows significantly enhanced condensation heat transfer compared to bare aluminum surface. In addition, the porosity of anodic aluminum oxide affected the mobility of water droplet even with oil-impregnation and Teflon-coating, indicating that the optimization of porous structure of anodic oxide is required for maximizing the condensation heat transfer.

• Journal of Hydrogen and New Energy
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• v.32 no.6
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• pp.524-533
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• 2021

In this study, a series of anion conductive organic/inorganic composite membranes with excellent ionic conductivity and chemical stability were prepared by introducing graphene oxide (GO) inorganic nanofiller into the quaternized poly(phenylen oxide (Q-PPO) polymer matrix. The fabricated organic/inorganic composite membranes showed higher ionic conductivity than the pristine membrane. In particular, Q-PPO/GO 0.7 showed the highest ionic conductivity value of 143.2 mS/cm at 90℃, which was 1.56 times higher than the pristine membrane Q-PPO (91.5 mS/cm). In addition, the organic/inorganic composite membrane showed superior dimensional stability and alkaline stability compared to the pristine membrane, and the physicochemical stability was improved as the content of inorganic fillers increased. Therefore, we suggest that the as-prepared organic/inorganic composite membranes are very promising materials for anion exchange membrane applications with high conductivity and alkaline stability.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.808-814
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• 2012

Photocatalytic zinc oxide powders were prepared from precursor zinc acetate and ammonia solution at elevated temperature, $80^{\circ}C$, by hydrothermal precipitation method. The effect of operating parameters, pH of ammonia solution and concentration of zinc acetate solution, on the characteristics of zinc oxide powders were experimentally examined. Zinc oxide powders prepared at the conditions of pH 11, zinc acetate concentration of 1.0 M, precipitation temperature of $80^{\circ}C$, showed smallest average particle diameter of $3{\mu}m$. SEM and XRD analysis confirmed that prepared zinc oxide has hexagonal rods structure, and Anatase type crystallinity. In addition, DRS and PL analysis showed that the zinc oxide has activity at the range of 200~400 nm of UV light. And the zinc oxide decomposed 57% of a food-color stamp Brilliant blue FCF for 3 hours under the UV radiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.2
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• pp.119-138
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• 2016

Objectives: The purpose of this study is to review size, shape, and crystal structure-dependent toxicity of major metal oxide particles such as silicon dioxide, tungsten trioxide, aluminum oxide, and titanium dioxide as byproducts generated in semiconductor fabrication facility. Methods: To review the toxicity of major metal oxide particles, we used various reported research and review papers. The papers were searched by using websites such as Google Scholar and PubMed. Keyword search terms included '$SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$) toxicity', 'health effects $SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$). Additional papers were identified in references cited in the searched papers. Results: In various cell lines and organs of human and animals, cytotoxicity, genotoxicity, hepatoxicity, fetotoxicity, neurotoxicity, and histopathological changes were induced by silicon dioxide, tungsten trioxide, aluminium oxide, and titanium dioxide particles. Differences in toxicity were dependent on the cell lines, organs, doses, as well as the chemical composition, size, surface area, shape, and crystal structure of the particles. However, the doses used in the reported papers were higher than the possible exposure level in general work environment. Oxidative stress induced by the metal oxide particles plays a significant role in the expression of toxicity. Conclusions: The results cannot guarantee human toxicity of the metal oxide particles, because there is still a lack of available information about health effects on humans. In addition, toxicological studies under the exposure conditions in the actual work environment are needed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.263-270
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• 2018

Recently, porous ceramic materials with anti-static performance are urgently needed for semiconductor and OLED/LCD display manufacturing industry. In this work, we fabricated porous titanium manganese oxide ceramics having the surface resistivity of $10^8-10^{10}$ ohm and enhanced mechanical strength by partial sintering method using nanosized titanium oxide. By addition of nano-sized titanium oxide in the matrix, neck formation between grains was strengthened, which remarkably increased flexural strength up to 170 MPa (@porosity: 15 %), 110 MPa (@porosity: 31 %), compared to 80 MPa (@porosity: 26 %) for pristine titanium manganese oxide ceramics. We evaluated the performances of our ceramics as air-floating module for OLED flexible display manufacturing devices.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.47-51
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• 2001

The structural properties of varistors surface studied by fractal phenomenon were investigated to verify the relations of electrical characteristics. The SEM photograph of varistors surface were changed by binary code and the grain shape of that were analyzed by fractal dimension. The void of varistors surface was found by fractal program. The relation between grain density and electrical properties depend on fractal dimension. The grain size in varistors surface was decreased by increasing of oxide antimony addition. The grain size of devices by oxide antimony addition were from 5 to $10[{\mu}m]$. The fractal dimension and electrical properties of varistors surface was related to between grain boundary and grain density. The grain size was decreased by increasing of fractal dimensions.

• Journal of Microbiology and Biotechnology
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• v.30 no.6
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• pp.926-929
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• 2020

This study aimed to determine the immune-stimulating effects of heat-killed Lactobacillus plantarum Ln1 (HK-Ln1) through the production of nitric oxide (NO) and pro-inflammatory cytokine achieved by inducing NF-κB and mitogen-activated protein kinase (MAPK)-signaling pathways in macrophages. HK-Ln1 showed higher NO and cytokine production compared to control (nonstimulated lipopolysaccharide); in addition, the expression of inducible nitric oxide synthase (iNOS) was induced through HK-Ln1treatment. The phosphorylation of IκB-α and p65 increased following treatment by HK-Ln1, which implicates IκB-α degradation and the translocation of p65 to nucleus. In addition, the phosphorylation of MAPKs, ERK 1/2, JNK, and p38 was induced following HK-Ln1 treatment.