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Oxidation Rates of TiAlLaN Thin Films Deposited by Ion Plating

이온플레이팅법으로 제조된 TiAlLaN계 박막의 산화속도

  • 서성만 (공주대학교 신소재공학부) ;
  • 이기선 (공주대학교 신소재공학부) ;
  • 이기안 (포항산업과학연구원 부품신소재연구센터 신금속연구팀)
  • Published : 2004.03.01

Abstract

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

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