• Journal of the Korean institute of surface engineering
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• v.17 no.3
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• pp.78-86
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• 1984

Hard anodic oxide film was investigated formed on pure aluminium with various temperature (30$^{\circ}-60^{\circ}C$), current densities (1.5-3.0A/$dm^2$) and concentrations(3-15g/l) of oxalic acid in 0.5M malic acid bath. The resulting characteristic of the anodic oxide film obtained were summarized as follows in the view point of physical and mechanical properties in relation with the above process variables. 1. The film thickness increased with oxalic acid concentration and bath temperature, while the reversed phenomena were obtained at a high concentration of oxalic acid and high temperature due to the severe dissolution of the anodic oxide film. 2. The hardness and the abrasion resistance were improved by lowering the addition of oxalic acid and the bath temperature. This feature was directly dependent on the porosity formed on the anodic oxide film. 3. The maximum hardness of anodic oxide film showed Hv 579 in the temperature of 30$^{\circ}C$ with the current density, 2.5A/$dm^2$ in the 0.5M malic acid bath mixed with 5g/l oxalic acid.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.16-22
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• 2008

Anodizing to form oxide layers on the pure titanium was performed in the electrolyte containing 1.5M $H_2SO_4$, 0.2M $H_3PO_4$, and 2.5wt.% $CuSO_4$ using the ac-biased arc anodizing technique. Titanium oxide layers anodized with different applied voltages, voltage-elevating rates, and anodizing times were investigated. In addition, thermal oxidation test under an atmospheric environment for the arc-anodized specimens was carried out. The thickness of oxide layers were not affected by the voltage-elevating rates, but increased slightly with the increase of anodizing times. The thickness of oxide layers were increased with the increase of voltages, and increased remarkably in the condition of 200V. The size and number of the pore observed in the center of the porous cell were decreased with increase of applied voltage. From the result of thermal oxidation test, it revealed that oxide layer formed by arc anodizing more effective to prevent oxidation of pure titanium.

• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

• Carbon letters
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• v.27
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• pp.18-25
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• 2018

In this study, graphene oxide(GO) was used as drug carriers to amorphize poorly watersoluble drugs via a co-spray drying process. Two poorly water-soluble drugs, fenofibrate and ibuprofen, were investigated. It was found that the drug molecules could be in the graphene nanosheets in amorphous or nano crystalline forms and thus have a significantly enhanced dissolution rate compared with the counterpart crystalline form. In addition, the dissolution of the amorphous drug enwrapped with the graphene oxide was higher than that of the amorphous drug in activated carbon (AC) even though the AC possessed a larger specific surface area than that of the graphene oxide. The amorphous formulations also remained stable under accelerated storage conditions ($40^{\circ}C$ and 75% relative humidity) for a study period of 14 months. Therefore, graphene oxide could be a potential drug carrier and amorphization agent for poorly water-soluble drugs to enhance their bioavailability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Journal of the Korean institute of surface engineering
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• v.54 no.2
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• pp.90-95
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• 2021

Surface modification technique enabling the control of condensation provides various benefit in various engineering systems, such as heat transfer, desalination, power plants, and so on. In this study, lubricant oil-impregnation into Teflon-coated nanoporous anodic oxide layer of aluminum to enhance a de-wetting and mobility of water droplet on surface. Due to the surface treatment improving water-repellency, the condensation mode is changed to dropwise, thus the frequency of sliding condensed water droplet on surface is increased. For these reasons, the surface of oil-impregnated Teflon-coated nanoporous anodic aluminum oxide shows significantly enhanced condensation heat transfer compared to bare aluminum surface. In addition, the porosity of anodic aluminum oxide affected the mobility of water droplet even with oil-impregnation and Teflon-coating, indicating that the optimization of porous structure of anodic oxide is required for maximizing the condensation heat transfer.

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.6
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• pp.524-533
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• 2021

In this study, a series of anion conductive organic/inorganic composite membranes with excellent ionic conductivity and chemical stability were prepared by introducing graphene oxide (GO) inorganic nanofiller into the quaternized poly(phenylen oxide (Q-PPO) polymer matrix. The fabricated organic/inorganic composite membranes showed higher ionic conductivity than the pristine membrane. In particular, Q-PPO/GO 0.7 showed the highest ionic conductivity value of 143.2 mS/cm at 90℃, which was 1.56 times higher than the pristine membrane Q-PPO (91.5 mS/cm). In addition, the organic/inorganic composite membrane showed superior dimensional stability and alkaline stability compared to the pristine membrane, and the physicochemical stability was improved as the content of inorganic fillers increased. Therefore, we suggest that the as-prepared organic/inorganic composite membranes are very promising materials for anion exchange membrane applications with high conductivity and alkaline stability.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.808-814
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• 2012

Photocatalytic zinc oxide powders were prepared from precursor zinc acetate and ammonia solution at elevated temperature, $80^{\circ}C$, by hydrothermal precipitation method. The effect of operating parameters, pH of ammonia solution and concentration of zinc acetate solution, on the characteristics of zinc oxide powders were experimentally examined. Zinc oxide powders prepared at the conditions of pH 11, zinc acetate concentration of 1.0 M, precipitation temperature of $80^{\circ}C$, showed smallest average particle diameter of $3{\mu}m$. SEM and XRD analysis confirmed that prepared zinc oxide has hexagonal rods structure, and Anatase type crystallinity. In addition, DRS and PL analysis showed that the zinc oxide has activity at the range of 200~400 nm of UV light. And the zinc oxide decomposed 57% of a food-color stamp Brilliant blue FCF for 3 hours under the UV radiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.